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This article is cited in 2 scientific papers (total in 2 papers)
Functionalization of low-k surfaces with low-energy Ar ions
A. A. Solovykha, A. A. Sychevab, E. N. Voroninaab a Lomonosov Moscow State University, Moscow, Russia
b Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics, Moscow, Russia
Abstract:
In this work low-energy Ar impacts on low-k surfaces were simulated with ab initio density functional theory method. The obtained results reveal the mechanism of CH$_3$-group removal under Ar atom/ion irradiation; the threshold energy of this process was estimated.
Keywords:
low-k dielectrics, functionalization, simulation, diffusion barriers, methyl groups.
Received: 19.11.2021 Revised: 13.01.2022 Accepted: 16.01.2022
Citation:
A. A. Solovykh, A. A. Sycheva, E. N. Voronina, “Functionalization of low-k surfaces with low-energy Ar ions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:7 (2022), 16–19
Linking options:
https://www.mathnet.ru/eng/pjtf7275 https://www.mathnet.ru/eng/pjtf/v48/i7/p16
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