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Kvantovaya Elektronika, 1973, Number 5(17), Pages 116–117
(Mi qe5541)
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This article is cited in 1 scientific paper (total in 1 paper)
Brief Communications
Internal Q switching in single-sided heterojunction injection lasers
P. G. Eliseev, L. P. Ivanov, A. S. Logginov, E. P. Nikitin
Abstract:
An experimental study was made of the internal Q switching in AlxGa1–x–GaAs single-sided heterojunction injection lasers. A study was made of the dynamics of the emission spectrum on transition from the spontaneous emission to the Q-switching conditions when a diode emitted single light pulses of ~120 psec duration at a time corresponding to the trailing edge of the pumping current pulse.
Received: 05.09.1972
Citation:
P. G. Eliseev, L. P. Ivanov, A. S. Logginov, E. P. Nikitin, “Internal Q switching in single-sided heterojunction injection lasers”, Kvantovaya Elektronika, 5 (1973), 116–117 [Sov J Quantum Electron, 3:5 (1974), 433–434]
Linking options:
https://www.mathnet.ru/eng/qe5541 https://www.mathnet.ru/eng/qe/y1973/i5/p116
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Abstract page: | 163 | Full-text PDF : | 62 |
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