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Vestnik Samarskogo Universiteta. Estestvenno-Nauchnaya Seriya, 2018, Volume 24, Issue 2, Pages 67–71
DOI: https://doi.org/10.18287/2541-7525-2018-24-2-67-71
(Mi vsgu576)
 

Mathematical Methods in Natural Sciences

Model of the drift-diffusion transport of charge carriers considering recombination in layers with fractal structure

M. O. Mamchuev

Department of Theoretical and Mathematical Physics, Institute of Applied Mathematics and Automation, 89A, Shortanova Street, Nalchik, 360000, Russian Federation (published under the terms of the Creative Commons Attribution 4.0 International License)
References:
Abstract: In this article, we study a model of the drift-diffusion transport of charge carries in the layers of certain fractal structure. We take into account the process of recombination of charge carries. Solutions of model equations are found in the closed form.
Keywords: volume charge density, charge carrier recombination, drift-diffusion transport of charge carriers, Riemann–Liouville fractional derivative, Caputo fractional derivative, fractal structure.
Received: 28.06.2018
Bibliographic databases:
Document Type: Article
UDC: 517.958:531-142.6+536
Language: Russian
Citation: M. O. Mamchuev, “Model of the drift-diffusion transport of charge carriers considering recombination in layers with fractal structure”, Vestnik SamU. Estestvenno-Nauchnaya Ser., 24:2 (2018), 67–71
Citation in format AMSBIB
\Bibitem{Mam18}
\by M.~O.~Mamchuev
\paper Model of the drift-diffusion transport of charge carriers considering recombination in layers with fractal structure
\jour Vestnik SamU. Estestvenno-Nauchnaya Ser.
\yr 2018
\vol 24
\issue 2
\pages 67--71
\mathnet{http://mi.mathnet.ru/vsgu576}
\crossref{https://doi.org/10.18287/2541-7525-2018-24-2-67-71}
\elib{https://elibrary.ru/item.asp?id=36731735}
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    Вестник Самарского государственного университета. Естественнонаучная серия
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