|
On the 40-th Anniversary of the Great Victory
|
785–787 |
|
Temperature Dependence (${4.2\div300}$ K) of Exciton-Transition Resonance Energies in A$^{\text{II}}$B$^{\text{VI}}$ Single Crystals K. A. Dmitrenko, L. V. Taranenko, S. G. Shevel, A. V. Marinchenko
|
788–794 |
|
Cathodoluminescence of Cubic Boron Nitride V. D. Tkachev, V. B. Shipilo, A. M. Zaitsev
|
795–798 |
|
Effect of Tunneling-Electron Scattering on Hopping Conduction with Variable Hopping Length B. Z. Spivak, V. A. Kharchenko, B. I. Shklovskii
|
799–806 |
|
Effect of Charge-Carrier Heating on the Shape of Germanium $p{-}n$ Junction Current–Voltage Characteristic S. P. Ashmontas, A. P. Olekas, E. I. Shirmulis
|
807–809 |
|
Aggregate of Electrically Active Impurities in Indium-Phosphide Single Crystals A. N. Georgobiani, V. P. Kalinushkin, A. V. Mikulenok, D. I. Murin, A. M. Prokhorov, S. I. Radautsan, I. M. Tiginyanu, V. V. Ursaki
|
810–813 |
|
Collision Ionization in Silicon-Carbide Polytypes Yu. A. Vodakov, D. P. Litvin, V. I. Sankin, E. N. Mokhov, A. D. Roenkov
|
814–818 |
|
Kinetics of Setting Cd$_{x}$Hg$_{1-x}$Te Crystals into Equilibrium with Mercury Vapours V. V. Bogoboyashchy, A. I. Elizarov, V. I. Ivanov-Omskii, V. R. Petrenko, V. A. Petryakov
|
819–824 |
|
Study of Variband Structures Based on Pb$_{1-x}$Sn$_{x}$Te O. A. Aleksandrova, M. I. Kamchatka, M. S. Miropolskii
|
825–830 |
|
Capacity Spectroscopy of Radiation-Induced Defects Produced in Si$-$SiO$_{2}$ Transient Layer under Cathode Sputterig A. A. Lebedev, V. Ekke
|
831–835 |
|
Effect of Overbarrier Electron
Photoemission in Photoresponse
Spectra of $n$-CdS${-n$-CdSe} Heterojunction V. I. Polyakov, M. G. Ermakov, P. I. Perov
|
836–841 |
|
Band Structure and Reflection Spectra of ZnSiP$_2$ N. A. Zakharov, V. A. Chaldyshev
|
842–847 |
|
Alternating-Current Hopping Electric Conductivity of Covalent Semiconductors with Deep Defects B. V. Klimkovich, N. A. Poklonskii, V. F. Stel'makh
|
848–852 |
|
Temperature Dependence of Alternating-Current Hopping Electric Conductivity of Lightly Compensated Semiconductors B. V. Klimkovich, N. A. Poklonskii, V. F. Stel'makh
|
853–857 |
|
On the Current Flow through a Dislocation Barrier Z. A. Veliev, V. B. Shikin
|
858–863 |
|
Transverse Photoelectromotive Force Arising in Germanium under Laser
Excitation of Extreme Intensity S. I. Kozlovsky, M. D. Moin
|
864–868 |
|
Study of Spin-Dependent Recombination in the Films of Silicon on Sapphire F. I. Borisov, Yu. V. Vorob'ev, V. I. Strikha, O. V. Tretyak, A. A. Shmatov
|
869–873 |
|
Some Peculiarities
of the Static Current–Voltage
Characteristic of a $p^{+}{-}\pi{-}p^{+}$ Structure A. I. Lukyanchenko, G. I. Oreshkin, E. A. Fetisov, KhafizovRash.~Z., KhafizovRen.~Z.
|
874–877 |
|
High-Voltage Photon-Injection Transistor Based on a Heterostructure B. I. Grigorev, V. I. Korol'kov, A. V. Rozhkov, V. S. Yuferev
|
878–884 |
|
Effect of Pressure on Electric Properties
of $p$-TlInSe$_{2}$ Single Crystals G. D. Guseinov, A. U. Malsagov, A. Kh. Matiev, S. Kh. Umarov, E. G. Abdullaev, M. L. Shubnikov
|
885–887 |
|
Photoactivity of Tin–Germanium Alloyed Contacts in the Infrared I. Ya. Marmur, Ya. A. Oksman
|
888–892 |
|
Piezospectroscopic Study of Photoluminescence Band in GaAs : Òå : Ñu with the Maximum near 1.3 eV N. S. Averkiev, V. B. Shikin, A. A. Isakov, E. M. Magerramov, V. E. Sedov
|
893–898 |
|
Photoeffect in a Variband $p{-}n$ Structure for Band–Impurity Radiative Recombination A. S. Volkov, G. V. Tsarenkov
|
899–904 |
|
Multivalue Anisotropy of Many-Valley Semiconductors with Account for Metal Contacts Z. S. Gribnikov
|
905–912 |
|
|
Short Notes
|
|
On the Tensosensitivity of Locally Deformed Inhomogeneous Semiconductor Structures E. G. Melikyan
|
913–915 |
|
Effect of Hydrogen on the Concentration
of Centers with Deep Levels in Cd$_{x}$Hg$_{1-x}$Te Crystals A. I. Evstigneev, V. F. Kuleshov, G. A. Lubochkova, M. V. Pashkovskii, E. B. Yakimov
|
915–916 |
|
Capacity Spectroscopy of Deep Levels in $n$-Si(Cr) E. V. Astrova, A. A. Lebedev, N. A. Sultanov, V. Ekke
|
917–919 |
|
Photoconduction of Selenium-Doped Silicon E. V. Astrova, I. B. Bolshakov, A. A. Lebedev, O. A. Mikhno
|
919–922 |
|
Special Features of the Variation of Low-Temperature Conduction in Inversion Layers near Silicon Surface in Heating
Fields E. M. Lapidus, E. A. Vygovskaya, A. A. Galaev
|
922–925 |
|
Theory of Deep Charged Impurity
Centers A. A. Klyuchikhin, S. G. Ogloblin
|
926–929 |
|
On the Achievement
of «Jouleless» Operation Mode of an Inhomogeneous Thermoelement M. A. Korzhuev, V. F. Bavkina, N. Kh. Abrikosov
|
929–930 |
|
Study of Localized States in Arsenio-Triselenide Gap by the Injection-Current Method B. S. Vakarov, L. E. Stys, M. G. Foigel, L. V. Tsybeskov
|
931–933 |
|
Efficiency of Luminescence in Compensated
Gallium Arsenide V. L. Korolev, V. V. Rossin, V. G. Sidorov, Yu. K. Shalabutov
|
934–936 |
|
Volume–Concentration Effect M. I. Daunov, A. B. Magomedov, A. È. Ramazanova
|
936–938 |
|
Determination of Lifetime in the Bulk and Diffusion Length in a Semiconductor of MDS Structure V. D. Usikov
|
939–941 |
|
On the Nature of IV-Group Impurity States of Different Valencies in Lead Chalcogenides L. V. Prokof'eva, A. N. Weis
|
941–944 |
|
Low-Temperature Thermal
Expansion of Amorphous Semiconductors V. G. Karpov
|
944–946 |
|
Negative Piezoresistance
in Transmutationally Doped $n$-Type Si Crystals under Uniaxial
Elastic Deformation P. I. Baransky, V. V. Savyak, Yu. V. Simonenko
|
947–949 |
|
Chemical Activity of Atoms of Inert Gases in Diamond and Effect of «Matrix Pressure» V. D. Tkachev, A. M. Zaitsev, V. V. Tkachev
|
949–952 |
|
Accumulation of Point Defects in Silicon with Regions of Disorder Transformed by
Annealing A. V. Vasil'ev, S. A. Smagulova, S. S. Shaimeev
|
952–955 |
|
On the Shape of Shubnikov–De-Haas Oscillation Lines in Hg$_{1-x}$Mn$_{x}$Se I. I. Lyapilin, A. I. Ponomarev, V. V. Karyagin, A. B. Zolotovitskii
|
955–959 |
|
Hall-Constant Sign Inversion in $p$-Type Ge due to Exclusion Effect K. M. Aliev
|
960–961 |
|
Nonlinear Evolution
of Laser Radiation and Semiconductor Plasma A. B. Romanov, M. A. Savchenko, I. V. Shcherbakov
|
962–964 |
|
On the Possibility of $S$-Type Current–Voltage Characteristic
of Selectively Doped Semiconductors due to Spatial Redistribution
of Carriers V. I. Tolstikhin
|
965–968 |
|
On the Thermoelectric Properties of Polycrystals B. Ya. Balagurov
|
968–970 |
|
|
Personalia
|
|
Anatoly Robertovich Regel' (to his 70-th birthday)
|
971–973 |