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Distribution of Electric Conductivity in the Vicinity of the Boundary of Solid-Phase Jointing of $p{-}n$ Bicrystals
V. R. Regel, E. A. Stepantsov, A. Ya. Tsalenchuk, M. E. Kishneva, A. B. Barboi, A. B. Tovmasyan, A. L. Vasilev
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977–980 |
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Electric and Photoelectric Properties of $n^{+}{-}n^{0}{-}n^{+}$ Structures Based on
GaAs with Metal Grid in the $n^0$ Range
Z. I. Alferov, V. I. Korol'kov, A. A. Pulatov, N. Rakhimov, T. S. Tabarov, B. S. Yavich
|
981–983 |
|
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Long-Range Acceleration of Complex Formation of Iron or Chromium with Boron in Silicon under Ionic Argon Implantation
P. V. Pavlov, E. S. Demidov, G. V. Zorina
|
984–988 |
|
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Study of Internal Structure of Lead-Sulphide Photosensitive Polycrystalline Films by Vacuum Overheating
L. N. Neustroen, K. E. Onarkulov, V. V. Osipov
|
989–995 |
|
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Levels of Thermal Donors in Silicon under Uniaxial Elastic Deformation
V. M. Babich, Yu. P. Dotsenko, K. I. Zotov, V. B. Kovalchuk
|
996–1000 |
|
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Two-Dimensional Conduction in InSe at Low Temperatures
N. B. Brandt, V. A. Kul'bachinskii, Z. D. Kovalyuk, G. V. Lashkarev
|
1001–1004 |
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Nonlinear Absorption of Submillimeter Radiation in Germanium due to Heating of Charge Carriers by Light
E. V. Beregulin, S. D. Ganichev, K. Y. Glukh, I. D. Yaroshetskiĭ
|
1005–1010 |
|
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Intraband Photoconduction due to Light Holes and Heating of Carriers in $p$-Type Ge under Submillimeter Laser Excitation
S. D. Ganichev, S. A. Emelyanov, I. D. Yaroshetskiĭ
|
1011–1015 |
|
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Radiative Recombination of Uniaxially Deformed ZnP$_{2}$ and CdP$_{2}$ Single Crystals
V. S. Vavilov, V. S. Koval, P. A. Romanyk, N. V. Stuchinskaya, K. Khakimov, G. P. Chuiko, M. V. Chukichev
|
1016–1020 |
|
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Influence of Surface Conduction on Galvanomagnetic Effects in $n$-Cd$_{x}$Hg$_{1-x}$Te
O. G. Balev, P. I. Baransky, G. V. Beketov, R. M. Vinetskii, O. P. Gorodnichii
|
1021–1025 |
|
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Migration Energies of Interstitial $d$-Impurities in Silicon
V. I. Fistul, V. A. Shmugurov
|
1026–1029 |
|
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Probability of Intervalley Transitions in Gallium-Arsenide Crystals
I. Ya. Karlik, D. N. Mirlin, V. F. Sapega
|
1030–1032 |
|
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Heating of Holes in an Electric Field in Boron-Doped Silicon under Uniaxial Compression
V. P. Sinis
|
1033–1038 |
|
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Capacity Spectroscopy of Cu, Au, Ag and Ni Deep Centers in Germanium
I. M. Kotina, V. V. Kuryatkov, S. R. Novikov, T. I. Pirozhkova
|
1039–1043 |
|
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Influence of Intervalley Repopulation of Electrons on Photomagnetic Effect in Silicon
B. K. Serdega, L. V. Shekhovtsov
|
1044–1046 |
|
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Photoelectric Characteristics of In$_{2}$O$_{3}{-}$SiO$_{2}{-}n$-Si Heterostructure with Internal Amplification of Photocurrent
V. A. Manasson, V. B. Baranuk, K. D. Tovstyuk
|
1047–1050 |
|
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Schottky Diodes on MnIn$_{2}$Te and MnGa$_{2}$Te$_{4}$ Magnetic Semiconductors
R. N. Bekimbetov, Yu. V. Rud', M. A. Tairov
|
1051–1053 |
|
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Spectral Dependence of the Probability of Long-Lived Electron Origination in Pb$_{0.78}$Sn$_{0.22}$Te$\langle$In$\rangle$
B. M. Vul, S. P. Grishechkina, T. Sh. Ragimova
|
1054–1059 |
|
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Metal–Dielectric–Metal Conduction Transition in a Hg$_{1-x}$Cd$_{x}$Te Gapless Semiconductor Induced by a Unixially Deformation
S. G. Gassan-zade, V. A. Romaka, G. A. Shepelskii
|
1060–1063 |
|
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Special Features of Capacity–Voltage Characteristics of MDS Variband Structures
I. V. Varlamov, L. A. V'yukov
|
1064–1067 |
|
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Permittivity of the Uniaxially Deformed Semiconductor with Degenerate Bands
E. V. Bakhanova, F. T. Vas'ko
|
1068–1074 |
|
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Formation of Electron Traps in $n$-Òóðå InP under $\gamma$-Quanta Irradiation
T. I. Kol'chenko, V. M. Lomako, S. E. Moroz
|
1075–1078 |
|
|
Luminescent Properties of Epitaxial Layers and $p{-}n$ Structures Based on In$_{1-x}$Ga$_{x}$As
(${0 < x < 0.23}$)
N. V. Zotova, S. A. Karandashov, B. A. Matveev, N. M. Stus, G. N. Talalakin, Yu. Yu. Bilinets
|
1079–1084 |
|
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Influence of Amplification Saturation and Quantum-Dimensional Effects on Threshold Characteristics of Lasers with Superthin
Active Regions
D. Z. Garbuzov, A. V. Tikunov, V. B. Khalfin
|
1085–1094 |
|
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Defect Formation in Artificial Diamond under High-Energy Ion Implantation
V. S. Varichenko, E. D. Vorobev, A. M. Zaitsev, V. A. Laptev, M. I. Samoilovich, V. A. Skuratov, V. F. Stel'makh
|
1095–1100 |
|
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Cathodoluminescence of Radiation-Induced Defects in Cubic Boron Nitride
A. M. Zaitsev, A. A. Melnikov, V. F. Stel'makh
|
1101–1105 |
|
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Effect of Near Delamination on Magnetic Properties of Pb$_{1-x}$Mn$_{x}$Te Solid Solutions
D. G. Andrianov, V. D. Kuznetsov, S. O. Klimonskii, A. A. Burdakin
|
1106–1111 |
|
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Electron Heat Capacity in Cd$_{x}$Hg$_{1-x}$Te near the Metal–Dielectric Transition in a Magnetic Field
B. A. Aronzon, A. V. Kopylov, E. Z. Meilikhov
|
1112–1117 |
|
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Effect of Isovalent Indium-Doping on «Natural» Acceptors in Gallium Antimonide
Yu. F. Birulin, V. P. Germogenov, Y. I. Otman, V. V. Chaldyshev, Yu. V. Shmartsev, L. E. Epiktetova
|
1118–1124 |
|
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Temperature Dependence of Pair-Recombination Kinetics in Amorphous Semiconductors
V. I. Arkhipov, V. R. Nikitenko, A. I. Rudenko
|
1125–1132 |
|
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Short Notes
|
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Spectra of Current Relaxations in GaAs$\langle$Cr$\rangle$ $p{-}i{-}n$ Epitaxial Structures
B. A. Bobylev, E. Kh. Khairi, S. I. Chinkichev
|
1133–1135 |
|
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Rate of Formation of $A$ Centers and Divacancies in $n$-Type Silicon under Electron Irradiation
N. V. Kolesnikov, V. N. Lomasov, S. E. Malkhanov
|
1136–1138 |
|
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Collisional Broadening of Optical Spectra and Its Relation with Mobility
A. M. Evstigneev, P. A. Gentsar, S. A. Grusha, R. V. Konakova, A. N. Krasiko, O. V. Snitko, Yu. A. Tkhorik
|
1138–1141 |
|
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Stimulated Radiation under Electron Excitation of Zinc-Diphosphide Crystals of Monoclinic Modification
K. Khakimov, V. S. Vavilov, L. A. Bityutskaya, E. N. Bormontov, M. V. Chukichev
|
1141–1143 |
|
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Field Effect on a Gapless Semiconductor
A. M. Yafyasov, V. B. Bozhevolnov, A. D. Perepelkin
|
1144–1147 |
|
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On the Effect of Density Fluctuation on Low-Temperature Kinetics of Bimolecular Recombination
M. G. Foigel
|
1147–1148 |
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