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2017, Volume 51, Issue 9
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Non-electronic properties of semiconductors (atomic structure, diffusion)
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Residual stresses in silicon and their evolution upon heat treatment and irradiation
I. E. Matyash, I. A. Minailova, B. K. Serdega, L. I. Khirunenko
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1155–1159 |
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Electronic properties of semiconductors
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Experimental studies of the effects of atomic ordering in epitaxial Ga$_{x}$In$_{1-x}$P on their optical properties
P. V. Seredin, D. L. Goloshchapov, A. S. Len'shin, A. N. Lukin, Yu. Yu. Khudyakov, I. N. Arsent'ev, T. Prutskij
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1160–1167 |
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Temperature dependence of the atomic structure and electrical activity of defects in ZnSb thermoelectric lightly doped with copper
L. V. Prokof'eva, F. S. Nasredinov, P. P. Konstantinov, A. A. Shabaldin
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1168–1175 |
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Optical properties of metamorphic hybrid heterostuctures for vertical-cavity surface-emitting lasers operating in the 1300-nm spectral range
A. V. Babichev, N. V. Kryzhanovskaya, È. I. Moiseev, A. G. Gladyshev, L. Ya. Karachinsky, I. I. Novikov, S. A. Blokhin, M. A. Bobrov, Yu. M. Zadiranov, S. I. Troshkov, A. Yu. Egorov
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1176–1181 |
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Influence of measurement temperature on the luminescence properties of (113) defects in oxygen-implanted silicon
N. A. Sobolev, A. E. Kalyadin, E. I. Shek, K. F. Shtel'makh
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1182–1184 |
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Surface, interfaces, thin films
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Generation of surface electron states with a silicon–ultrathin-oxide interface under the field-induced damage of metal–oxide–semiconductor structures
E. I. Goldman, S. A. Levashov, V. G. Naryshkina, G. V. Chucheva
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1185–1188 |
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Semiconductor structures, low-dimensional systems, quantum phenomena
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On the delta-type doping of GaAs-based heterostructures with manganese compounds
K. D. Moiseev, V. N. Nevedomskiy, Yu. Kudriavtsev, A. Escobosa-Echavarria, M. Lopez-Lopez
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1189–1195 |
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Effect of electrostatic shielding on the photoelectric properties of heterostructures with deep QWs
L. V. Danilov, M. P. Mikhailova, I. A. Andreev, G. G. Zegrya
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1196–1201 |
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Micro- and nanocrystalline, porous, composite semiconductors
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High-temperature annealing of macroporous silicon in an inert-gas flow
E. V. Astrova, N. E. Preobrazhenskii, S. I. Pavlov, V. B. Voronkov
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1202–1212 |
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Characteristic properties of macroporous silicon sintering in an argon atmosphere
E. V. Astrova, N. E. Preobrazhenskii, S. I. Pavlov, V. B. Voronkov
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1213–1222 |
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Semiconductor physics
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Derivation of an analytical expression for a physical process from an experimental curve with kinks
V. N. Davydov, S. V. Kharitonov, N. È. Lugina, K. P. Melnik
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1223–1228 |
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Degradation of micromorphous thin-film silicon ($\alpha$-Si/$\mu c$-Si) solar modules: Evaluation of seasonal efficiency based on the data of monitoring
D. A. Bogdanov, G. A. Gorbatovskii, V. N. Verbitskii, A. V. Bobyl', E. I. Terukov
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1229–1234 |
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Hopping conductivity and dielectric relaxation in Schottky barriers on GaN
N. I. Bochkareva, V. V. Voronenkov, R. I. Gorbunov, M. V. Virko, V. S. Kogotkov, A. A. Leonidov, P. N. Vorontsov-Velyaminov, I. A. Sheremet, Yu. G. Shreter
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1235–1242 |
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Transient switch-off of a 4$H$-SiC bipolar transistor from the deep-saturation mode
V. S. Yuferev, M. E. Levinshteĭn, P. A. Ivanov, Jon Q. Zhang, John W. Palmour
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1243–1248 |
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Electric-field sensor based on a double quantum dot in a microcavity
A. V. Tsukanov, V. G. Chekmachev
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1249–1256 |
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High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with $p$–$n$ junctions: I. Physics of the switching process
A. S. Kyuregyan
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1257–1262 |
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High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with $p$–$n$ junctions: II. Energy efficiency
A. S. Kyuregyan
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1263–1266 |
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Electrical and thermal properties of photoconductive antennas based on In$_{x}$Ga$_{1-x}$As ($x>$ 0.3) with a metamorphic buffer layer for the generation of terahertz radiation
D. S. Ponomarev, R. A. Khabibullin, A. E. Yachmenev, A. Yu. Pavlov, D. N. Slapovskiy, I. A. Glinskiy, D. V. Lavrukhin, O. A. Ruban, P. P. Maltsev
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1267–1272 |
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Collective modes in coupled semiconductor disk lasers in the case of whispering-gallery modes
M. A. Royz, A. N. Baranov, A. N. Imenkov, D. S. Burenina, A. A. Pivovarova, A. M. Monakhov, E. A. Grebenshchikova, Yu. P. Yakovlev
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1273–1277 |
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High-voltage MIS-gated GaN transistors
E. V. Erofeev, I. V. Fedin, V. V. Fedina, M. V. Stepanenko, A. V. Yuryeva
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1278–1281 |
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Manufacturing, processing, testing of materials and structures
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Formation of low-dimensional structures in the InSb/AlAs heterosystem
D. S. Abramkin, A. K. Bakarov, M. A. Putyato, E. A. Emelyanov, D. A. Kolotovkina, A. K. Gutakovskii, T. S. Shamirzaev
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1282–1288 |
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Specific features of the ion-beam synthesis of Ge nanocrystals in SiO$_{2}$ thin films
I. E. Tyschenko, A. G. Cherkov, V. A. Volodin, M. Voelskow
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1289–1294 |
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