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2020, Volume 54, Issue 10
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Electronic properties of semiconductors
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Effect of a nickel impurity on the galvanomagnetic properties and electronic structure of PbTe
E. P. Skipetrov, B. B. Kovalev, I. V. Shevchenko, A. V. Knotko, V. E. Slynko
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987–996 |
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Features of the electrical-conductivity mechanism in $\gamma$-irradiated TlInSe$_{2}$ single crystals under hydrostatic pressure
R. S. Madatov, Sh. G. Gasimov, S. S. Babaev, A. S. Alekperov, I. M. Movsumova, S. H. Jabarov
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997–1002 |
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Elastic and thermal properties of orthorhombic and tetragonal phases of Cu$_2$ZnSiSe$_4$ by first principles calculations
Y. Gao, W. Guan, Y. Dong
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1003 |
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Surface, interfaces, thin films
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Structure and photoelectric properties of PbSe films deposited in the presence of ascorbic acid
L. N. Maskaeva, V. M. Yurk, V. F. Markov, M. V. Kuznetsov, V. I. Voronin, O. A. Lipina
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1004–1010 |
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Investigation of built-in electric fields at the GaSe/GaAs interface by photoreflectance spectroscopy
O. S. Komkov, S. A. Khakhulin, D. D. Firsov, P. S. Avdienko, I. V. Sedova, S. V. Sorokin
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1011–1017 |
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Semiconductor structures, low-dimensional systems, quantum phenomena
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Electron-population Bragg grating induced in an Al$_{x}$Ga$_{1-x}$As–GaAs–Al$_{x}$Ga$_{1-x}$As heterostructure by intrinsic stimulated picosecond emission
N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev, A. N. Krivonosov
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1018–1028 |
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Dispersive transport of hydrogen in MOS structures after exposure to ionizing radiation
O. V. Aleksandrov
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1029–1033 |
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Growth of ZnO nanostructures by wet oxidation of Zn thin film deposited on heat-resistant flexible substrates at low temperature
O. F. Farhat, M. Husham, M. Bououdina
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1034 |
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Micro- and nanocrystalline, porous, composite semiconductors
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Effect of ultraviolet radiation and electric field on the conductivity of structures based on $\alpha$- and $\varepsilon$-Ga$_{2}$O$_{3}$
V. M. Kalygina, V. I. Nikolaev, A. V. Almaev, A. V. Tsymbalov, V. V. Kopyev, Yu. S. Petrova, I. A. Pechnikov, P. N. Butenko
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1035–1040 |
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Structure, optical, and photoelectric properties of lead-sulfide films doped with strontium and barium
L. N. Maskaeva, E. V. Mostovschikova, V. I. Voronin, E. E. Lekomtseva, P. S. Bogatova, V. F. Markov
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1041–1051 |
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Structure and optical properties of chalcogenide glassy As–Ge–Te semiconductor
A. I. Isayev, H. I. Mammadova, S. I. Mekhtieva, R. I. Alekberov
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1052–1057 |
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Spontaneous and stimulated emission in thin films of Cu(In$_{1-x}$Ga$_{x}$)(S$_{y}$Se$_{1-y}$)$_{2}$ solid solutions in the ñomposition of solar cells
I. E. Svitsiankou, V. N. Pavlovskii, E. V. Muravitskaya, E. V. Lutsenko, G. P. Yablonskii, O. M. Borodavchenko, V. D. Zhivulko, A. V. Mudryi, M. V. Yakushev, S. O. Kognovitckii
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1058–1065 |
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Semiconductor physics
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External quantum efficiency of bifacial HIT solar cells
A. V. Ermachikhin, Yu. V. Vorobyov, A. D. Maslov, E. P. Trusov, V. G. Litvinov
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1066–1071 |
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Capacitance spectroscopy of heteroepitaxial AlGaAs/GaAs $p$–$i$–$n$ structures
M. M. Sobolev, F. Yu. Soldatenkov
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1072–1078 |
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Comparative analysis of the optical and physical properties of inas and InAs, In$_{0.8}$Ga$_{0.2}$As quantum dots and solar cells based on them
R. A. Salii, S. A. Mintairov, A. M. Nadtochiy, V. N. Nevedomskiy, M. Z. Shvarts, N. A. Kalyuzhnyy
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1079–1087 |
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1.55 $\mu$m-range vertical cavity surface emitting lasers, manufactured by wafer fusion of heterostuctures grown by solid-source molecular beam epitaxy
S. A. Blokhin, V. N. Nevedomskiy, M. A. Bobrov, N. A. Maleev, A. A. Blokhin, A. G. Kuz'menkov, A. P. Vasil'ev, S. S. Rochas, A. V. Babichev, A. G. Gladyshev, I. I. Novikov, L. Ya. Karachinsky, D. V. Denisov, K. O. Voropaev, A. S. Ionov, A. Yu. Egorov, V. M. Ustinov
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1088–1096 |
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Analysis of the temperature dependence of diode ideality factor in InGaN-based UV-a light-emitting diode
P. Dalapati, N. B. Manik, A. N. Basu
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1097 |
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Investigation of the electrical properties of double-gate dual-active-layer (DG-DAL) thin-film transistor (TFT) with HfO$_{2}$/La$_{2}$O$_{3}$/HfO$_{2}$ (HLH) sandwich gate dielectrics
L. Ramesh, S. Moparthi, P. K. Tiwari, V. R. Samoju, G. K. Saramekala
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1098 |
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Characterization of deep levels in lGaN|GaN HEMT by FT-DLTS and current DLTS
M. Gassoumi
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1099 |
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Manufacturing, processing, testing of materials and structures
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Physicochemical interactions in the GeSb$_{2}$Te$_{4}$–PbSb$_{2}$Te$_{4}$ System
G. R. Gurbanov, M. B. Adygezalova
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1100–1105 |
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Combination of reactive-ion etching and chemical etching as a method for optimizing the surface relief on AlGaInN heterostructures
L. K. Markov, I. P. Smirnova, M. V. Kukushkin, A. S. Pavluchenko
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1106–1111 |
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Electrical and photoelectric properties of $\alpha$-Si/SiO$_{2}$ and $\alpha$-Ge/SiO$_{2}$ multilayer nanostructures on $p$-Si substrates annealed at various temperatures
O. M. Sreseli, M. A. Elistratova, D. N. Goryachev, E. V. Beregulin, V. N. Nevedomskiy, N. A. Bert, A. V. Ershov
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1112–1116 |
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XXIV International symposium Nanophysics and nanoelectronics, Nizhny Novgorod, march 10-13, 2020
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Crystalline-phase switching in heterostructured Ga(AsP) nanowires under the impact of elastic strains
N. V. Sibirev, Yu. S. Berdnikov, V. N. Sibirev
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1117–1121 |
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Features of MIS structures based on insulating PbSnTe:In films with the composition in the vicinity of the band inversion related to their ferroelectric properties
A. E. Klimov, A. N. Akimov, I. O. Akhundov, V. A. Golyashov, D. V. Gorshkov, D. V. Ishchenko, E. V. Matyushenko, I. G. Neizvestnyi, G. Yu. Sidorov, S. P. Suprun, A. S. Tarasov, O. E. Tereshchenko, V. S. Epov
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1122–1128 |
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Growth of a ge layer on a Si/SiO$_{2}$/Si (100) structure by the hot wire chemical vapor deposition
A. A. Sushkov, D. A. Pavlov, S. A. Denisov, V. Yu. Chalkov, R. N. Kriukov, E. A. Pitirimova
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1129–1133 |
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Behavior of lithium donors in bulk single-crystal isotopically pure $^{28}$Si$_{1-x}$ $^{72}$Ge$_{x}$ alloys
A. A. Ezhevskii, P. G. Sennikov, D. V. Guseinov, A. V. Soukhorukov, E. A. Kalinina, N. V. Abrosimov
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1134–1138 |
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Time-resolved photoluminescence in heterostructures with InGaAs:Cr/GaAs quantum wells
M. V. Dorokhin, P. B. Demina, Yu. A. Danilov, O. V. Vikhrova, Yu. M. Kuznetsov, M. V. Ved, F. Iikawa, M. A. G. Balanta
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1139–1144 |
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Relaxation of the excited states of arsenic in strained germanium
K. A. Kovalevsky, Yu. Yu. Choporova, R. Kh. Zhukavin, N. V. Abrosimov, S. G. Pavlov, H.-W. Hübers, V. V. Tsyplenkov, V. D. Kukotenko, B. A. Knyazev, V. N. Shastin
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1145–1149 |
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Kinetics of the luminescence response of self-assembled Ge(Si) nanoislands embedded in two-dimensional photonic crystals
A. N. Yablonskii, A. V. Novikov, M. V. Stepikhova, S. M. Sergeev, N. A. Baidakova, M. V. Shaleev, Z. F. Krasil'nik
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1150–1157 |
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Comparison of the efficiency of promising heterostructure frequency-multiplier diodes of the THz-frequency range
D. I. Dyukov, A. G. Fefelov, A. V. Korotkov, D. G. Pavel'ev, V. A. Kozlov, E. S. Obolenskaya, A. S. Ivanov, S. V. Obolensky
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1158–1162 |
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Investigation of stimulated emission from HgTe/CdHgTe quantum-well heterostructures in the 3–5 $\mu$m atmospheric transparency window
L. A. Kushkov, V. V. Utochkin, V. Ya. Aleshkin, A. A. Dubinov, K. E. Kudryavtsev, V. I. Gavrilenko, N. S. Kulikov, M. A. Fadeev, V. V. Rumyantsev, N. N. Mikhailov, S. A. Dvoretskii, A. A. Razova, S. V. Morozov
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1163–1168 |
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Continuous-wave stimulated emission in the 10–14-$\mu$m range under optical excitation in HgCdTe/CdHgTe structures with quasirelativistic dispersion
V. V. Utochkin, V. Ya. Aleshkin, A. A. Dubinov, V. I. Gavrilenko, N. S. Kulikov, M. A. Fadeev, V. V. Rumyantsev, N. N. Mikhailov, S. A. Dvoretskii, A. A. Razova, S. V. Morozov
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1169–1173 |
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