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2024, Volume 58, Issue 8
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XXVIII International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, 11-15 March 2024
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Local doping of monolayer WSe$_2$ on piezoelectric GaInP$_2$ and GaN substrates
V. Yu. Aksenov, A. V. Ankudinov, A. S. Vlasov, M. S. Dunaevskii, V. N. Zhmerik, D. V. Lebedev, K. V. Likhachev, V. A. Pereskokova, A. M. Mintairov
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401–408 |
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Non-annealed ohmic contacts with reduced resistance to $p$- and $n$-type epitaxial layers of diamond and their thermal stability
E. A. Arkhipova, M. N. Drozdov, S. A. Kraev, O. I. Khrykin, A. I. Okhapkin, M. A. Lobaev, A. L. Vikharev, V. A. Isaev, S. A. Bogdanov
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409–414 |
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Electronic properties of semiconductors
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Drift transport of charge carriers in silicon $p^+$–$n$–$n^+$ structures at temperatures $\le$ 100 mK
E. M. Verbitskaya, I. V. Eremin, A. A. Podoskin, V. O. Zbrozhek, S. O. Slipchenko, N. N. Fadeeva, A. A. Yablokov, V. K. Eremin
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415–423 |
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Electrical properties of highly nitrogen–doped synthetic single crystal diamonds grown at high pressure and temperature
S. G. Buga, I. N. Kupriyanov, Yu. M. Borzdov, M. S. Kuznetsov, N. V. Luparev, S. A. Nosukhin, B. A. Kulnitskiy, D. D. Prikhodko, Yu. N. Pal'yanov
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424–433 |
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Semiconductor structures, low-dimensional systems, quantum phenomena
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Magnetotransport in HgTe quantum wells with two gate electrodes
G. M. Minkov, O. E. Rut, A. A. Sherstobitov, A. V. Germanenko, S. A. Dvoretskii, N. N. Mikhailov
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434–442 |
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Amorphous, glassy, organic semiconductors
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Influence of Bi impurity on the main parameters of the current-voltage characteristics of the Ge$_2$Sb$_2$Te$_5$ phase-change memory semiconductor
S. A. Fefelov, L. P. Kazakova, N. A. Bogoslovskii, A. B. Bylev, E. V. Gushchina, Zh. K. Tolepov, A. S. Zhakypov, O. Yu. Prikhodko
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443–447 |
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Micro- and nanocrystalline, porous, composite semiconductors
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Fundamental and applied aspects of physical characteristics of polycrystalline samples of oxide semiconductor (In$_2$O$_3$)$_{1-x}$ : (SrO)$_x$
Yu. M. Nikolaenko, N. B. Efros, N. I. Mezin, I. Yu. Reshidova
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448–452 |
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Semiconductor physics
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Identification of the main recombination channels in lightly doped layers of GaAs $p$–$i$–$n$-diodes before and after irradiation with 1 MeV neutrons
M. M. Sobolev, F. Yu. Soldatenkov, V. A. Kozlov
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453–460 |
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