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Publications in Math-Net.Ru |
Citations |
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2024 |
| 1. |
S. A. Fefelov, L. P. Kazakova, N. A. Bogoslovskii, A. B. Bylev, E. V. Gushchina, Zh. K. Tolepov, A. S. Zhakypov, O. Yu. Prikhodko, “Influence of Bi impurity on the main parameters of the current-voltage characteristics of the Ge$_2$Sb$_2$Te$_5$ phase-change memory semiconductor”, Fizika i Tekhnika Poluprovodnikov, 58:8 (2024), 443–447   |
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2018 |
| 2. |
O. Yu. Prikhodko, S. L. Mikhailova, E. S. Mukhametkarimov, K. Dautkhan, S. Ya. Maksimova, G. A. Ismailova, K. A. Tauasarov, L. V. Mikhailov, “Thermal stability of surface plasmon resonance absorption in $a$-Ñ:Í$\langle$Ag+TiÎ$_{2}\rangle$ nanocomposite films”, Optics and Spectroscopy, 125:6 (2018), 758–762 ; Optics and Spectroscopy, 125:6 (2018), 864–869 |
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2016 |
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S. A. Fefelov, L. P. Kazakova, D. Arsova, S. A. Kozyukhin, K. D. Tsendin, O. Yu. Prikhodko, “Voltage oscillations in the case of the switching effect in thin layers of Ge–Sb–Te chalcogenides in the current mode”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 958–962 ; Semiconductors, 50:7 (2016), 941–946 |
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2012 |
| 4. |
N. G. Almasov, O. Yu. Prikhodko, K. D. Tsendin, “Inversion of the impurity conductivity sign in As$_2$Se$_3$:Bi films deposited by two different methods”, Fizika i Tekhnika Poluprovodnikov, 46:10 (2012), 1319–1321 ; Semiconductors, 46:10 (2012), 1296–1298 |
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