|
|
|
Publications in Math-Net.Ru |
Citations |
|
2026 |
| 1. |
R. Kh. Zhukavin, R. A. Khabibullin, T. A. Bagaev, A. A. Afonenko, D. V. Ushakov, A. V. Ikonnikov, D. I. Kuritsyn, D. A. Postnov, K. A. Kovalevsky, P. A. Yunin, A. V. Antonov, A. A. Dubinov, D. A. Belov, F. I. Zubov, I. A. Glinskiy, I. E. Rykov, I. E. Martychev, M. A. Ladugin, A. A. Marmalyuk, A. Yu. Pavlov, R. R. Galiev, D. S. Ponomarev, S. V. Morozov, V. I. Gavrilenko, “A continuous terahertz quantum cascade laser grown by metal-organic chemical vapor deposition”, Fizika i Tekhnika Poluprovodnikov, 60:3 (2026), 148–153 |
| 2. |
D. I. Kuritsyn, S. V. Morozov, L. V. Gavrilenko, V. I. Gavrilenko, A. A. Dubinov, V. V. Rumyantsev, R. A. Khabibullin, G. S. Sokolovskii, “Collimating optical system of polymethilpentene for quantum cascade terahertz laser”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 52:7 (2026), 44–47 |
|
2025 |
| 3. |
R. Kh. Zhukavin, M. A. Fadeev, A. V. Antonov, D. A. Postnov, K. A. Kovalevsky, S. V. Morozov, A. A. Dubinov, A. A. Afonenko, D. V. Ushakov, A. Yu. Pavlov, D. S. Ponomarev, R. A. Khabibullin, V. I. Gavrilenko, “Terahertz quantum cascade laser in a quantizing magnetic field”, Fizika i Tekhnika Poluprovodnikov, 59:7 (2025), 433–438 |
|
2024 |
| 4. |
V. I. Gavrilenko, D. I. Kuritsyn, M. A. Fadeev, A. V. Antonov, A. A. Yantser, K. A. Kovalevsky, S. V. Morozov, A. A. Dubinov, R. Kh. Zhukavin, “THz quantum cascade lasers in magnetic fields”, Fizika i Tekhnika Poluprovodnikov, 58:4 (2024), 196–201 |
|
2023 |
| 5. |
K. A. Mazhukina, V. V. Rumyantsev, A. A. Dubinov, V. V. Utochkin, A. A. Razova, M. A. Fadeev, K. E. Spirin, M. S. Zholudev, N. N. Mikhailov, S. A. Dvoretsky, V. I. Gavrilenko, S. V. Morozov, “Generation of long-wavelength stimulated emission in HgCdTe quantum wells with an increased Auger recombination threshold”, Pis'ma v Zh. Èksper. Teoret. Fiz., 118:5 (2023), 311–316 ; JETP Letters, 118:5 (2023), 309–314 |
4
|
| 6. |
A. A. Dubinov, D. V. Ushakov, A. A. Afonenko, “Optical losses of a waveguide with superconducting plates in terahertz quantum cascade lasers”, Fizika i Tekhnika Poluprovodnikov, 57:8 (2023), 706–709 |
| 7. |
M. A. Fadeev, A. A. Yantser, A. A. Dubinov, D. V. Kozlov, V. V. Rumyantsev, N. N. Mikhailov, V. I. Gavrilenko, S. V. Morozov, “Two-frequency stimulated emission in Hg(Cd)Te/CdHgTe heterostructure”, Fizika i Tekhnika Poluprovodnikov, 57:6 (2023), 421–425 |
| 8. |
V. Ya. Aleshkin, A. O. Rudakov, A. A. Dubinov, “Optimization of the single quantum well CdHgTe/HgTe heterostructure parameters for the plasmon-phonons generation”, Fizika i Tekhnika Poluprovodnikov, 57:4 (2023), 237–242 |
|
2022 |
| 9. |
V. Ya. Aleshkin, A. A. Dubinov, V. I. Gavrilenko, S. G. Pavlov, H.-W. Hübers, “Recombination in gapless HgTe/CdHgTe quantum well heterostructure”, Fizika Tverdogo Tela, 64:2 (2022), 173–178 |
| 10. |
A. A. Dubinov, S. V. Morozov, “Optimization of a stripe laser waveguide based on an HgCdTe heterostructure for single-mode generation of far-IR radiation”, Fizika i Tekhnika Poluprovodnikov, 56:9 (2022), 855–857 |
|
2021 |
| 11. |
V. Ya. Aleshkin, A. A. Dubinov, “Influence of quantum well parameters on the spectrum of two-dimensional plasmons in HgTe/CdHgTe heterostructures”, Fizika i Tekhnika Poluprovodnikov, 55:11 (2021), 973–977 |
| 12. |
V. V. Utochkin, A. A. Dubinov, M. A. Fadeev, V. V. Rumyantsev, N. N. Mikhailov, S. A. Dvoretskii, V. I. Gavrilenko, S. V. Morozov, “Effect of internal optical losses on the generation of mid-IR stimulated emission in waveguide heterostructures with HgCdTe/CdHgTe quantum wells”, Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 922–926 ; Semiconductors, 55:12 (2021), 899–902 |
1
|
| 13. |
A. A. Dubinov, V. Ya. Aleshkin, “Model of a terahertz quantum-cascade laser based on a two-dimensional plasmon”, Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 869–871 ; Semiconductors, 55:11 (2021), 828–830 |
2
|
| 14. |
V. V. Rumyantsev, A. P. Fokin, A. A. Dubinov, S. S. Morozov, A. A. Bogdashov, V. Parshin, M. Yu. Glyavin, V. I. Gavrilenko, S. V. Morozov, “Calculation of the efficiency of doubling the radiation of a sub-THz gyrotron dueto lattice nonlinearity in a single crystal InP plate”, Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 855–860 |
| 15. |
V. V. Rumyantsev, K. V. Marem'yanin, A. P. Fokin, A. A. Dubinov, A. A. Razova, N. N. Mikhailov, S. A. Dvoretskii, M. Yu. Glyavin, V. I. Gavrilenko, S. V. Morozov, “Generation of terahertz radiation in InP : Fe crystals due to second-order lattice nonlinearity”, Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 813–817 ; Semiconductors, 55:10 (2021), 785–789 |
| 16. |
A. A. Dubinov, V. V. Rumyantsev, M. A. Fadeev, V. V. Utochkin, S. V. Morozov, “Dielectric waveguide optimization for the laser structures with HgTe/CdHgTe QWs emitting in far-infrared range”, Fizika i Tekhnika Poluprovodnikov, 55:5 (2021), 455–459 |
1
|
| 17. |
A. A. Dubinov, V. Ya. Aleshkin, V. I. Gavrilenko, V. V. Rumyantsev, N. N. Mikhailov, S. A. Dvoretskii, V. V. Utochkin, S. V. Morozov, “THz laser generation on a hybrid surface plasmon in a HgCdTe-based structure”, Kvantovaya Elektronika, 51:2 (2021), 158–163 [Quantum Electron., 51:2 (2021), 158–163 ] |
2
|
|
2020 |
| 18. |
V. V. Utochkin, V. Ya. Aleshkin, A. A. Dubinov, V. I. Gavrilenko, N. S. Kulikov, M. A. Fadeev, V. V. Rumyantsev, N. N. Mikhailov, S. A. Dvoretskii, A. A. Razova, S. V. Morozov, “Continuous-wave stimulated emission in the 10–14-$\mu$m range under optical excitation in HgCdTe/CdHgTe structures with quasirelativistic dispersion”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1169–1173 ; Semiconductors, 54:10 (2020), 1371–1375 |
3
|
| 19. |
L. A. Kushkov, V. V. Utochkin, V. Ya. Aleshkin, A. A. Dubinov, K. E. Kudryavtsev, V. I. Gavrilenko, N. S. Kulikov, M. A. Fadeev, V. V. Rumyantsev, N. N. Mikhailov, S. A. Dvoretskii, A. A. Razova, S. V. Morozov, “Investigation of stimulated emission from HgTe/CdHgTe quantum-well heterostructures in the 3–5 $\mu$m atmospheric transparency window”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1163–1168 ; Semiconductors, 54:10 (2020), 1365–1370 |
| 20. |
V. V. Utochkin, M. A. Fadeev, S. S. Krishtopenko, V. V. Rumyantsev, V. Ya. Aleshkin, A. A. Dubinov, S. V. Morozov, B. R. Semyagin, M. A. Putyato, E. A. Emelyanov, V. V. Preobrazhenskii, V. I. Gavrilenko, “Photoluminescence spectra of InAs/GaInSb/InAs quantum wells in the mid-infrared region”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 929–932 ; Semiconductors, 54:9 (2020), 1119–1122 |
2
|
| 21. |
K. V. Marem'yanin, V. Parshin, E. A. Serov, V. V. Rumyantsev, K. E. Kudryavtsev, A. A. Dubinov, A. P. Fokin, S. S. Morozov, V. Ya. Aleshkin, M. Yu. Glyavin, G. G. Denisov, S. V. Morozov, “Investigation into microwave absorption in semiconductors for frequency-multiplication devices and radiation-output control of continuous and pulsed gyrotrons”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 878–883 ; Semiconductors, 54:9 (2020), 1069–1074 |
4
|
| 22. |
An. A. Afonenko, A. A. Afonenko, D. V. Ushakov, A. A. Dubinov, “Analysis of phonon modes and electron–phonon interaction in quantum-cascade laser heterostructures”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 780–784 ; Semiconductors, 54:8 (2020), 936–940 |
1
|
|
2019 |
| 23. |
N. V. Dikareva, B. N. Zvonkov, I. V. Samartsev, S. M. Nekorkin, N. V. Baidus, A. A. Dubinov, “GaAs-based laser diode with InGaAs waveguide quantum wells”, Fizika i Tekhnika Poluprovodnikov, 53:12 (2019), 1718–1720 ; Semiconductors, 53:12 (2019), 1709–1711 |
3
|
| 24. |
V. V. Rumyantsev, K. V. Marem'yanin, A. P. Fokin, A. A. Dubinov, V. V. Utochkin, M. Yu. Glyavin, N. N. Mikhailov, S. A. Dvoretskii, S. V. Morozov, V. I. Gavrilenko, “Second-harmonic generation of subterahertz gyrotron radiation by frequency doubling in InP : Fe and its application for magnetospectroscopy of semiconductor structures”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1244–1249 ; Semiconductors, 53:9 (2019), 1217–1221 |
9
|
| 25. |
V. V. Utochkin, V. Ya. Aleshkin, A. A. Dubinov, V. I. Gavrilenko, N. S. Kulikov, M. A. Fadeev, V. V. Rumyantsev, N. N. Mikhailov, S. A. Dvoretskii, S. V. Morozov, “Study of the auger recombination energy threshold in a series of waveguide heterostructures with HgTe/Cd$_{0.7}$Hg$_{0.3}$Te QWs near 14 $\mu$m”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1178–1181 ; Semiconductors, 53:9 (2019), 1154–1157 |
4
|
| 26. |
V. Ya. Aleshkin, N. V. Baidus, A. A. Dubinov, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Kruglov, D. G. Reunov, “Submonolayer InGaAs/GaAs quantum dots grown by MOCVD”, Fizika i Tekhnika Poluprovodnikov, 53:8 (2019), 1159–1163 ; Semiconductors, 53:8 (2019), 1138–1142 |
6
|
| 27. |
D. V. Ushakov, A. A. Afonenko, A. A. Dubinov, V. I. Gavrilenko, O. Yu. Volkov, N. V. Shchavruk, D. S. Ponomarev, R. A. Khabibullin, “Balance-equation method for simulating terahertz quantum-cascade lasers using a wave-function basis with reduced dipole moments of tunnel-coupled states”, Kvantovaya Elektronika, 49:10 (2019), 913–918 [Quantum Electron., 49:10 (2019), 913–918 ] |
20
|
| 28. |
A. A. Dubinov, V. Ya. Aleshkin, S. V. Morozov, “Generation of THz radiation at a difference frequency in a HgCdTe-based laser”, Kvantovaya Elektronika, 49:7 (2019), 689–692 [Quantum Electron., 49:7 (2019), 689–692 ] |
1
|
| 29. |
M. A. Fadeev, A. A. Dubinov, V. Ya. Aleshkin, V. V. Rumyantsev, V. V. Utochkin, V. I. Gavrilenko, F. Teppe, H.-W. Hübers, N. N. Mikhailov, S. A. Dvoretskii, S. V. Morozov, “Effect of Cd content in barriers on the threshold energy of Auger recombination in waveguide structures with HgTe/Cd<sub>x</sub>Hg<sub>1-x</sub>Te quantum wells, emitting at a wavelength of 18 μm”, Kvantovaya Elektronika, 49:6 (2019), 556–558 [Quantum Electron., 49:6 (2019), 556–558 ] |
2
|
|
2018 |
| 30. |
I. V. Samartsev, S. M. Nekorkin, B. N. Zvonkov, V. Ya. Aleshkin, A. A. Dubinov, I. Yu. Pashen'kin, N. V. Dikareva, A. B. Chigineva, “Photodetectors with an InGaP active region and InGaP metamorphic buffer layer grown on GaAs substrates”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1460–1463 ; Semiconductors, 52:12 (2018), 1564–1567 |
1
|
| 31. |
N. V. Baidus, V. Ya. Aleshkin, A. A. Dubinov, Z. F. Krasil'nik, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, A. V. Rykov, D. G. Reunov, M. V. Shaleev, P. A. Yunin, D. V. Yurasov, “On the application of strain-compensating GaAsP layers for the growth of InGaAs/GaAs quantum-well laser heterostructures emitting at wavelengths above 1100 nm on artificial Ge/Si substrates”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1443–1446 ; Semiconductors, 52:12 (2018), 1547–1550 |
4
|
| 32. |
K. E. Kudryavtsev, A. A. Dubinov, V. Ya. Aleshkin, D. V. Yurasov, P. V. Gorlachuk, Yu. L. Ryaboshtan, A. A. Marmalyuk, A. V. Novikov, Z. F. Krasil'nik, “Stimulated emission in the 1.3–1.5 $\mu$m spectral range from AlGaInAs quantum wells in hybrid light-emitting III–V heterostructures on silicon substrates”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1384–1389 ; Semiconductors, 52:11 (2018), 1495–1499 |
| 33. |
A. A. Dubinov, V. Ya. Aleshkin, S. V. Morozov, “Lowering the lasing threshold by doping in mid-infrared lasers based on HgCdTe with HgTe quantum wells”, Fizika i Tekhnika Poluprovodnikov, 52:9 (2018), 1100–1103 ; Semiconductors, 52:9 (2018), 1221–1224 |
3
|
| 34. |
V. V. Rumyantsev, L. S. Bovkun, A. M. Kadykov, M. A. Fadeev, A. A. Dubinov, V. Ya. Aleshkin, N. N. Mikhailov, S. A. Dvoretsky, B. Piot, M. Orlita, M. Potemski, F. Teppe, S. V. Morozov, V. I. Gavrilenko, “Magnetooptical studies and stimulated emission in narrow gap HgTe/CdHgTe structures in the very long wavelength infrared range”, Fizika i Tekhnika Poluprovodnikov, 52:4 (2018), 464 ; Semiconductors, 52:4 (2018), 436–441 |
| 35. |
V. Ya. Aleshkin, N. V. Baidus, O. V. Vikhrova, A. A. Dubinov, B. N. Zvonkov, Z. F. Krasil'nik, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, A. V. Rykov, I. V. Samartsev, D. V. Yurasov, “Stimulated emission at 1.3-$\mu$m wavelength in metamorphic InGaAs/InGaAsP structure with quantum wells grown on Ge/Si (001) substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:16 (2018), 67–74 ; Tech. Phys. Lett., 44:8 (2018), 735–738 |
| 36. |
D. V. Ushakov, A. A. Afonenko, A. A. Dubinov, V. I. Gavrilenko, I. S. Vasil'evskii, N. V. Shchavruk, D. S. Ponomarev, R. A. Khabibullin, “Mode loss spectra in THz quantum-cascade lasers with gold- and silver-based double metal waveguides”, Kvantovaya Elektronika, 48:11 (2018), 1005–1008 [Quantum Electron., 48:11 (2018), 1005–1008 ] |
22
|
| 37. |
A. A. Afonenko, D. V. Ushakov, V. Ya. Aleshkin, A. A. Dubinov, N. V. Dikareva, S. M. Nekorkin, B. N. Zvonkov, “Power characteristics of lasers with quantum-well waveguides and blocking layers”, Kvantovaya Elektronika, 48:4 (2018), 390–394 [Quantum Electron., 48:4 (2018), 390–394 ] |
1
|
|
2017 |
| 38. |
V. V. Rumyantsev, A. M. Kadykov, M. A. Fadeev, A. A. Dubinov, V. V. Utochkin, N. N. Mikhailov, S. A. Dvoretskii, S. V. Morozov, V. I. Gavrilenko, “Investigation of HgCdTe waveguide structures with quantum wells for long-wavelength stimulated emission”, Fizika i Tekhnika Poluprovodnikov, 51:12 (2017), 1616–1620 ; Semiconductors, 51:12 (2017), 1557–1561 |
7
|
| 39. |
N. V. Baidus, V. Ya. Aleshkin, A. A. Dubinov, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, D. A. Pavlov, A. V. Rykov, A. A. Sushkov, M. V. Shaleev, P. A. Yunin, D. V. Yurasov, A. N. Yablonskii, Z. F. Krasil'nik, “Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1579–1582 ; Semiconductors, 51:11 (2017), 1527–1530 |
5
|
| 40. |
V. Ya. Aleshkin, N. V. Baidus, A. A. Dubinov, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, A. V. Rykov, I. V. Samartsev, A. G. Fefelov, D. V. Yurasov, Z. F. Krasil'nik, “Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1530–1533 ; Semiconductors, 51:11 (2017), 1477–1480 |
4
|
| 41. |
N. V. Dikareva, B. N. Zvonkov, O. V. Vikhrova, S. M. Nekorkin, V. Ya. Aleshkin, A. A. Dubinov, “Dual-frequency GaAs/InGaP laser diode with a GaAsSb quantum well”, Fizika i Tekhnika Poluprovodnikov, 51:10 (2017), 1410–1413 ; Semiconductors, 51:10 (2017), 1360–1363 |
1
|
| 42. |
V. Ya. Aleshkin, N. V. Baidus, A. A. Dubinov, Z. F. Krasil'nik, S. M. Nekorkin, A. V. Novikov, A. V. Rykov, D. V. Yurasov, A. N. Yablonskii, “On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates”, Fizika i Tekhnika Poluprovodnikov, 51:5 (2017), 695–698 ; Semiconductors, 51:5 (2017), 663–666 |
6
|
|
2016 |
| 43. |
V. V. Rumyantsev, M. A. Fadeev, S. V. Morozov, A. A. Dubinov, K. E. Kudryavtsev, A. M. Kadykov, I. V. Tuzov, S. A. Dvoretskii, N. N. Mikhailov, V. I. Gavrilenko, F. Teppe, “Long-wavelength stimulated emission and carrier lifetimes in HgCdTe-based waveguide structures with quantum wells”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1679–1684 ; Semiconductors, 50:12 (2016), 1651–1656 |
7
|
| 44. |
N. V. Baidus, S. M. Nekorkin, D. A. Kolpakov, A. V. Ershov, V. Ya. Aleshkin, A. A. Dubinov, A. A. Afonenko, “Method for narrowing the directional pattern of an InGaAs/GaAs/AlGaAs multiwell heterolaser”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1509–1512 ; Semiconductors, 50:11 (2016), 1488–1492 |
| 45. |
A. A. Dubinov, “Germanium laser with a hybrid surface plasmon mode”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1469–1472 ; Semiconductors, 50:11 (2016), 1449–1452 |
1
|
| 46. |
V. Ya. Aleshkin, A. A. Dubinov, K. E. Kudryavtsev, P. A. Yunin, M. N. Drozdov, O. V. Vikhrova, S. M. Nekorkin, B. N. Zvonkov, “Stimulated emission from a metamorphic GaAsSb bulk layer on a GaAs substrate”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 596–599 ; Semiconductors, 50:5 (2016), 586–589 |
|
2015 |
| 47. |
I. V. Samartsev, V. Ya. Aleshkin, N. V. Dikareva, A. A. Dubinov, B. N. Zvonkov, D. A. Kolpakov, S. M. Nekorkin, “Optimization of InGaP/GaAs/InGaAs heterolasers with tunnel-coupled waveguides”, Fizika i Tekhnika Poluprovodnikov, 49:12 (2015), 1619–1622 ; Semiconductors, 49:12 (2015), 1571–1574 |
1
|
| 48. |
D. A. Kolpakov, B. N. Zvonkov, S. M. Nekorkin, N. V. Dikareva, V. Ya. Aleshkin, A. A. Dubinov, “On a semiconductor laser with a $p$–$n$ tunnel junction with radiation emission through the substrate”, Fizika i Tekhnika Poluprovodnikov, 49:11 (2015), 1489–1491 ; Semiconductors, 49:11 (2015), 1440–1442 |
1
|
| 49. |
V. Ya. Aleshkin, N. V. Dikareva, A. A. Dubinov, B. N. Zvonkov, K. E. Kudryavtsev, S. M. Nekorkin, “An observation of direct-gap electroluminescence in GaAs structures with Ge quantum wells”, Fizika i Tekhnika Poluprovodnikov, 49:2 (2015), 175–178 ; Semiconductors, 49:2 (2015), 170–173 |
| 50. |
V. Ya. Aleshkin, N. V. Dikareva, A. A. Dubinov, B. N. Zvonkov, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, P. A. Yunin, D. V. Yurasov, “The waveguide effect of InGaAs quantum wells in a GaAs structure on Si substrate with Ge buffer layer”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:13 (2015), 72–78 ; Tech. Phys. Lett., 41:7 (2015), 648–650 |
2
|
| 51. |
V. Ya. Aleshkin, N. V. Dikareva, A. A. Dubinov, B. N. Zvonkov, Z. F. Krasil'nik, S. M. Nekorkin, “Optical characteristics of laser diodes based on A3B5 compounds grown on germanium substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:6 (2015), 105–110 ; Tech. Phys. Lett., 41:3 (2015), 304–306 |
| 52. |
N. V. Dikareva, S. M. Nekorkin, B. N. Zvonkov, V. Ya. Aleshkin, A. A. Dubinov, “Nonlinear harmonic mixing in an InGaAs/InGaP/GaAs laser on a germanium substrate”, Kvantovaya Elektronika, 45:3 (2015), 204–206 [Quantum Electron., 45:3 (2015), 204–206 ] |
1
|
|
2014 |
| 53. |
V. Ya. Aleshkin, N. V. Dikareva, A. A. Dubinov, S. A. Denisov, Z. F. Krasil'nik, K. E. Kudryavtsev, S. A. Matveev, S. M. Nekorkin, V. G. Shengurov, “Stimulated emission from an InGaAs/GaAs/AlGaAs heterostructure grown on a Si substrate”, Pis'ma v Zh. Èksper. Teoret. Fiz., 100:12 (2014), 900–903 ; JETP Letters, 100:12 (2014), 795–797 |
4
|
| 54. |
A. A. Afonenko, V. Ya. Aleshkin, A. A. Dubinov, “Efficiency of vertical emission from a semiconductor laser waveguide with a diffraction grating”, Fizika i Tekhnika Poluprovodnikov, 48:1 (2014), 94–99 ; Semiconductors, 48:1 (2014), 89–94 |
3
|
| 55. |
N. V. Dikareva, S. M. Nekorkin, M. V. Karzanova, B. N. Zvonkov, V. Ya. Aleshkin, A. A. Dubinov, A. A. Afonenko, “Substrate-emitting semiconductor laser with a trapezoidal active region”, Kvantovaya Elektronika, 44:4 (2014), 286–288 [Quantum Electron., 44:4 (2014), 286–288 ] |
2
|
|
2013 |
| 56. |
A. A. Dubinov, “Role of auger recombination in the determination of the threshold current density of a green-wavelength laser”, Pis'ma v Zh. Èksper. Teoret. Fiz., 97:5 (2013), 283–286 ; JETP Letters, 97:5 (2013), 245–248 |
1
|
| 57. |
V. Ya. Aleshkin, A. A. Afonenko, N. V. Dikareva, A. A. Dubinov, K. E. Kudryavtsev, S. V. Morozov, S. M. Nekorkin, “Waveguide effect of GaAsSb quantum wells in a laser structure based on GaAs”, Fizika i Tekhnika Poluprovodnikov, 47:11 (2013), 1486–1488 ; Semiconductors, 47:11 (2013), 1475–1477 |
7
|
| 58. |
V. Ya. Aleshkin, A. A. Dubinov, M. N. Drozdov, B. N. Zvonkov, K. E. Kudryavtsev, A. A. Tonkikh, A. N. Yablonskii, P. Werner, “Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells”, Fizika i Tekhnika Poluprovodnikov, 47:5 (2013), 621–625 ; Semiconductors, 47:5 (2013), 636–640 |
3
|
| 59. |
V. Ya. Aleshkin, N. V. Dikareva, A. A. Dubinov, B. N. Zvonkov, M. V. Karzanova, K. E. Kudryavtsev, S. M. Nekorkin, A. N. Yablonskii, “Guiding effect of quantum wells in semiconductor lasers”, Kvantovaya Elektronika, 43:5 (2013), 401–406 [Quantum Electron., 43:5 (2013), 401–406 ] |
6
|
|
2012 |
| 60. |
S. V. Morozov, M. S. Zholudev, A. V. Antonov, V. V. Rumyantsev, V. I. Gavrilenko, V. Ya. Aleshkin, A. A. Dubinov, N. N. Mikhailov, S. A. Dvoretskii, O. Drachenko, S. Winnerl, H. Schneider, M. Helm, “Study of lifetimes and photoconductivity relaxation in heterostructures with Hg$_x$Cd$_{1-x}$Te/Cd$_y$Hg$_{1-y}$Te quantum wells”, Fizika i Tekhnika Poluprovodnikov, 46:11 (2012), 1388–1392 ; Semiconductors, 46:11 (2012), 1362–1366 |
35
|
| 61. |
V. Ya. Aleshkin, A. A. Dubinov, L. V. Gavrilenko, Z. F. Krasil'nik, D. I. Kuritsyn, D. I. Kryzhkov, S. V. Morozov, “Picosecond photoluminescence dynamics in an InGaAs/GaAs quantum-well heterostructure”, Fizika i Tekhnika Poluprovodnikov, 46:7 (2012), 940–943 ; Semiconductors, 46:7 (2012), 917–920 |
5
|
| 62. |
S. M. Nekorkin, B. N. Zvonkov, M. V. Karzanova, N. V. Dikareva, V. Ya. Aleshkin, A. A. Dubinov, “Mode structure in the far field radiation of a leaky-wave multiple quantum well laser”, Kvantovaya Elektronika, 42:10 (2012), 931–933 [Quantum Electron., 42:10 (2012), 931–933 ] |
9
|
|
2011 |
| 63. |
A. A. Biryukov, S. M. Nekorkin, M. N. Kolesnikov, T. S. Babushkina, V. Ya. Aleshkin, A. A. Dubinov, “Anomalous characteristics of lasers with a large number of quantum wells”, Zhurnal Tekhnicheskoi Fiziki, 81:7 (2011), 149–151 ; Tech. Phys., 56:7 (2011), 1049–1052 |
3
|
| 64. |
V. Ya. Aleshkin, T. S. Babushkina, A. A. Biryukov, A. A. Dubinov, B. N. Zvonkov, M. N. Kolesnikov, S. M. Nekorkin, “Simultaneous TE$_1$ and TE$_2$ mode lasing yielding dual-wavelength oscillation in a semiconductor laser with a tunnel junction”, Fizika i Tekhnika Poluprovodnikov, 45:5 (2011), 652–656 ; Semiconductors, 45:5 (2011), 641–645 |
3
|
|
2010 |
| 65. |
V. Ya. Aleshkin, T. S. Babushkina, A. A. Biryukov, A. A. Dubinov, B. N. Zvonkov, M. N. Kolesnikov, V. I. Nekorkin, “Leaky-wave semiconductor laser with improved energetic characteristics and very narrow dirrectional pattern”, Kvantovaya Elektronika, 40:10 (2010), 855–857 [Quantum Electron., 40:10 (2010), 855–857 ] |
7
|
|
2009 |
| 66. |
V. Ya. Aleshkin, A. A. Dubinov, V. I. Ryzhii, “Terahertz laser based on optically pumped graphene: model and feasibility of realization”, Pis'ma v Zh. Èksper. Teoret. Fiz., 89:2 (2009), 70–74 ; JETP Letters, 89:2 (2009), 63–67 |
50
|
| 67. |
V. Ya. Aleshkin, A. A. Biryukov, A. A. Dubinov, B. N. Zvonkov, S. M. Nekorkin, “Simultaneous generation of $TE_0$- and $TE_1$ modes with different wavelengths in a semiconducting laser diode”, Zhurnal Tekhnicheskoi Fiziki, 79:11 (2009), 150–152 ; Tech. Phys., 54:11 (2009), 1711–1713 |
| 68. |
B. N. Zvonkov, A. A. Biryukov, S. M. Nekorkin, V. Ya. Aleshkin, V. I. Gavrilenko, A. A. Dubinov, K. V. Marem'yanin, S. V. Morozov, “Difference-frequency generation in a butt-join diode laser”, Fizika i Tekhnika Poluprovodnikov, 43:2 (2009), 220–223 ; Semiconductors, 43:2 (2009), 208–211 |
4
|
| 69. |
V. Ya. Aleshkin, A. A. Dubinov, “Intracavity terahertz difference-frequency generation in an InGaAs-quantum-well two-frequency InGaAsP/InP laser”, Kvantovaya Elektronika, 39:8 (2009), 727–730 [Quantum Electron., 39:8 (2009), 727–730 ] |
4
|
|
2008 |
| 70. |
V. Ya. Aleshkin, A. A. Antonov, S. V. Gaponov, A. A. Dubinov, Z. F. Krasil'nik, K. E. Kudryavtsev, A. G. Spivakov, A. N. Yablonskii, “Tunable source of terahertz radiation based on the difference-frequency generation in a GaP crystal”, Pis'ma v Zh. Èksper. Teoret. Fiz., 88:12 (2008), 905–907 ; JETP Letters, 88:12 (2008), 787–789 |
11
|
| 71. |
A. A. Biryukov, B. N. Zvonkov, S. M. Nekorkin, V. Ya. Aleshkin, A. A. Dubinov, V. V. Kocharovsky, Vl. V. Kocharovskii, “Efficient generation of the first waveguide mode in the InGaAs/GaAs/InGaP heterolaser”, Fizika i Tekhnika Poluprovodnikov, 42:3 (2008), 361–364 ; Semiconductors, 42:3 (2008), 354–357 |
1
|
| 72. |
V. Ya. Aleshkin, A. A. Dubinov, “Generation of difference-frequency radiation in the far- and mid-IR ranges in a two-chip laser based on gallium arsenide on a germanium substrate”, Kvantovaya Elektronika, 38:9 (2008), 855–858 [Quantum Electron., 38:9 (2008), 855–858 ] |
1
|
| 73. |
V. Ya. Aleshkin, A. A. Dubinov, “Generation of difference-frequency radiation in mid- and far-IR ranges by using subpicosecond and picosecond semiconductor lasers”, Kvantovaya Elektronika, 38:2 (2008), 149–153 [Quantum Electron., 38:2 (2008), 149–153 ] |
3
|
|
2007 |
| 74. |
A. A. Biryukov, B. N. Zvonkov, S. M. Nekorkin, P. B. Demina, N. N. Semenov, V. Ya. Aleshkin, V. I. Gavrilenko, A. A. Dubinov, K. V. Marem'yanin, S. V. Morozov, A. A. Belyanin, V. V. Kocharovsky, Vl. V. Kocharovskii, “A multifrequency interband two-cascade laser”, Fizika i Tekhnika Poluprovodnikov, 41:10 (2007), 1226–1230 ; Semiconductors, 41:10 (2007), 1209–1213 |
4
|
| 75. |
V. Ya. Aleshkin, N. V. Vostokov, D. M. Gaponova, V. M. Daniltsev, A. A. Dubinov, Z. F. Krasil'nik, A. I. Korytin, D. I. Kuritsyn, D. A. Pryakhin, V. I. Shashkin, “Picosecond kinetics of photoexcited carriers in gallium arsenide containing aluminum nanoclusters”, Fizika i Tekhnika Poluprovodnikov, 41:8 (2007), 929–933 ; Semiconductors, 41:8 (2007), 909–913 |
3
|
|
2006 |
| 76. |
V. Ya. Aleshkin, A. A. Afonenko, A. A. Dubinov, “Oscillations at a difference frequency in the middle and far infrareds in GaP semiconductor waveguides”, Zhurnal Tekhnicheskoi Fiziki, 76:9 (2006), 98–100 ; Tech. Phys., 51:9 (2006), 1207–1209 |
2
|
|
2004 |
| 77. |
V. Ya. Aleshkin, A. A. Afonenko, A. A. Dubinov, “Nonlinear mid-IR radiation in two-frequency semiconductor lasers with a corrugated waveguide”, Zhurnal Tekhnicheskoi Fiziki, 74:11 (2004), 92–96 ; Tech. Phys., 49:11 (2004), 1486–1490 |
|
| Organisations |
|
| |
|
|