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Rudenko, Konstantin Vasil'evich

Main Scientist Researcher
Doctor of physico-mathematical sciences (2007)
Speciality: 05.27.01 (solid-state electronics, radio-electronic components, micro- and nanoelectronics, devices on quantum effects)
E-mail:
Website: https://ftian.ru/rudenko-konstantin-vasilevich/

https://www.mathnet.ru/eng/person105934
List of publications on Google Scholar
ISTINA https://istina.msu.ru/workers/22477346
https://www.scopus.com/authid/detail.url?authorId=6603679966
https://www.researchgate.net/profile/Konstantin-Rudenko

Publications in Math-Net.Ru Citations
2025
1. V. P. Popov, V. A. Antonov, V. E. Zhilitskii, A. A. Lomov, A. V. Myakonkikh, K. V. Rudenko, “Thermally stable ferroelectric HfO$_2$ : Al$_2$O$_3$ (10:1) in silicon-on-insulator and silicon-on-sapphire heterostructures after rapid thermal annealing treatments and oxidation-induced silicon thinning”, Pis'ma v Zh. Èksper. Teoret. Fiz., 121:12 (2025),  945–951  mathnet; JETP Letters, 121:12 (2025), 902–908
2023
2. O. O. Permyakova, A. E. Rogozhin, A. V. Myakon'kikh, K. V. Rudenko, “Low resistance state degradation during endurance measurements in HfO$_2$(8 םל)/HfO$_X$N$_Y$-based structures”, Fizika i Tekhnika Poluprovodnikov, 57:6 (2023),  451–454  mathnet  elib
2018
3. A. V. Fadeev, K. V. Rudenko, “Atomic layer deposition of thin films onto 3$D$ nanostructures: the effect of wall tilt angle and aspect ratio of trenches”, Zhurnal Tekhnicheskoi Fiziki, 88:10 (2018),  1573–1580  mathnet  elib; Tech. Phys., 63:10 (2018), 1525–1532 2
4. A. V. Fadeev, K. V. Rudenko, “Analytical model for atomic-layer deposition of thin films on the walls of cylindrical holes with a relatively high aspect ratio”, Zhurnal Tekhnicheskoi Fiziki, 88:8 (2018),  1264–1272  mathnet  elib; Tech. Phys., 63:8 (2018), 1228–1235 3
5. A. V. Fadeev, A. V. Myakon'kikh, K. V. Rudenko, “Analytical model of atomic layer deposition of films on 3D structures with high aspect ratios”, Zhurnal Tekhnicheskoi Fiziki, 88:2 (2018),  243–250  mathnet  elib; Tech. Phys., 63:2 (2018), 235–242 7
2016
6. V. P. Popov, M. A. Ilnitskii, E. D. Zhanaev, A. V. Myakon'kikh, K. V. Rudenko, A. V. Glukhov, “Biosensor properties of SOI nanowire transistors with a PEALD Al$_{2}$O$_{3}$ dielectric protective layer”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  643–649  mathnet  elib; Semiconductors, 50:5 (2016), 632–638 16

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