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Publications in Math-Net.Ru |
Citations |
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2023 |
| 1. |
E. A. Emelyanov, T. A. Del, M. O. Petrushkov, A. G. Nastovjak, A. A. Spirina, T. A. Gavrilova, B. R. Semyagin, A. V. Vasev, M. A. Putyato, V. V. Preobrazhenskii, “Arrays of quasi-one-dimensional GaAs nanocrystals grown on the oxidized surface of the Si/GaAs(001) heterostructure: effect of the Si epitaxial layer on the array structure”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:3 (2023), 37–41   |
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2020 |
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E. A. Emelyanov, A. G. Nastovjak, M. O. Petrushkov, M. Yu. Yesin, T. A. Gavrilova, M. A. Putyato, N. L. Shwartz, V. A. Shvets, A. V. Vasev, B. R. Semyagin, V. V. Preobrazhenskii, “A mask based on a Si epitaxial layer for the self-catalytic nanowire growth on GaAs (111)$B$ and GaAs (100) substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:4 (2020), 11–14 ; Tech. Phys. Lett., 46:2 (2020), 161–164 |
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2018 |
| 3. |
A. G. Nastovjak, I. G. Neizvestny, M. A. Vasilenko, N. L. Shwartz, “Concentric GaAs nanorings growth modelling”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 520 ; Semiconductors, 52:5 (2018), 639–644 |
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2015 |
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M. V. Knyazeva, A. G. Nastovjak, I. G. Neizvestnyi, N. L. Shwartz, “Simulated growth of GaAs nanowires: Catalytic and self-catalyzed growth”, Fizika i Tekhnika Poluprovodnikov, 49:1 (2015), 63–70 ; Semiconductors, 49:1 (2015), 60–68 |
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2014 |
| 5. |
A. N. Karpov, A. V. Zverev, A. G. Nastovjak, S. V. Usenkov, N. L. Shwartz, “A lattice Monte Carlo model for nanostructure formation analysis”, Num. Meth. Prog., 15:3 (2014), 388–399 |
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