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Publications in Math-Net.Ru |
Citations |
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2016 |
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V. G. Shengurov, V. Yu. Chalkov, S. A. Denisov, S. A. Matveev, A. V. Nezhdanov, A. I. Mashin, D. O. Filatov, M. V. Stepikhova, Z. F. Krasil'nik, “Conditions of growth of high-quality relaxed Si$_{1-x}$Ge$_{x}$ layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire”, Fizika i Tekhnika Poluprovodnikov, 50:9 (2016), 1270–1275   ; Semiconductors, 50:9 (2016), 1248–1253 |
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2014 |
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V. Ya. Aleshkin, N. V. Dikareva, A. A. Dubinov, S. A. Denisov, Z. F. Krasil'nik, K. E. Kudryavtsev, S. A. Matveev, S. M. Nekorkin, V. G. Shengurov, “Stimulated emission from an InGaAs/GaAs/AlGaAs heterostructure grown on a Si substrate”, Pis'ma v Zh. Èksper. Teoret. Fiz., 100:12 (2014), 900–903 ; JETP Letters, 100:12 (2014), 795–797   |
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S. A. Denisov, S. A. Matveev, V. Yu. Chalkov, V. G. Shengurov, Yu. N. Drozdov, M. V. Stepikhova, D. V. Shengurov, Z. F. Krasil'nik, “Si$_{1-x}$Ge$_x$/Si heterostructures grown by molecular-beam epitaxy on silicon-on-sapphire substrates”, Fizika i Tekhnika Poluprovodnikov, 48:3 (2014), 417–420 ; Semiconductors, 48:3 (2014), 402–405 |
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