PhD, senior researcher in Institute of Physics and Technology of RAS (IPT RAS), in 2006 graduated from Moscow Institute of Physics and Technology (MIPT), defended PhD thesis in 2009. Field of research: high-k dielectrics, contact systems for MOSFETs, atomic force microscopy, CV- and IV-measurements.
A. G. Isaev, O. O. Permyakova, A. E. Rogozhin, “Investigation of the filament properties in the HfO$_2$-based structures using conductive atomic force microscopy”, Zhurnal Tekhnicheskoi Fiziki, 93:8 (2023), 1143–1151
O. O. Permyakova, A. E. Rogozhin, A. V. Myakon'kikh, K. V. Rudenko, “Low resistance state degradation during endurance measurements in HfO$_2$(8 םל)/HfO$_X$N$_Y$-based structures”, Fizika i Tekhnika Poluprovodnikov, 57:6 (2023), 451–454
2017
3.
A. E. Rogozhin, M. A. Bruk, E. N. Zhikharev, F. A. Sidorov, “Nanophotonic structure formation by dry e-beam etching of the resist: resolution limitation origins”, Computer Optics, 41:4 (2017), 499–503
M. A. Bruk, E. N. Zhikharev, D. R. Streltsov, V. A. Kalnov, A. V. Spirin, A. E. Rogozhin, “Some peculiarities of a new method of microrelief creation by the direct electron-beam etching of resist”, Computer Optics, 39:2 (2015), 204–210
E. A. Bogoyavlenskaya, V. I. Rudakov, Yu. I. Denisenko, V. V. Naumov, A. E. Rogozhin, “Formation of W/HfO$_2$/Si gate structures using in situ magnetron sputtering and rapid thermal annealing”, Zhurnal Tekhnicheskoi Fiziki, 84:5 (2014), 82–87; Tech. Phys., 59:5 (2014), 711–715
