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Publications in Math-Net.Ru |
Citations |
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2024 |
| 1. |
A. S. Vedeneev, A. M. Kozlov, D. V. Kolodko, V. A. Luzanov, I. A. Sorokin, “Electron transport in carbon-based nanocomposites for memristor nanosystems”, Fizika Tverdogo Tela, 66:1 (2024), 109  |
| 2. |
A. S. Vedeneev, D. V. Kolodko, A. M. Kozlov, V. A. Luzanov, I. A. Sorokin, “Ferrum doped diamond-like carbon films: technology and nonlinear electron transport”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:19 (2024), 42–44  |
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2019 |
| 3. |
A. S. Vedeneev, V. A. Luzanov, V. V. Rylkov, “Effects of monopolar resistive switching in thin diamond-like carbon layers”, Pis'ma v Zh. Èksper. Teoret. Fiz., 109:3 (2019), 170–173 ; JETP Letters, 109:3 (2019), 171–174   |
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2017 |
| 4. |
A. S. Vedeneev, V. V. Rylkov, K. S. Napolskii, A. P. Leontiev, A. A. Klimenko, A. M. Kozlov, V. A. Luzanov, S. N. Nikolaev, M. P. Temiryazeva, A. S. Bugaev, “Effects of electron drag of gold in pores of anodic aluminum oxide: Reversible resistive switching in a chain of point contacts”, Pis'ma v Zh. Èksper. Teoret. Fiz., 106:6 (2017), 387–391 ; JETP Letters, 106:6 (2017), 411–415 |
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2016 |
| 5. |
K. Yu. Chernoglazov, S. N. Nikolaev, V. V. Rylkov, A. S. Semisalova, A. V. Zenkevich, V. V. Tugushev, A. L. Vasil'ev, Yu. M. Chesnokov, E. M. Pashaev, Yu. A. Matveev, A. B. Granovskii, O. A. Novodvorskii, A. S. Vedeneev, A. S. Bugaev, O. Drachenko, S. Zhou, “Anomalous Hall effect in polycrystalline Mn$_{x}$Si$_{1-x}$ ($x\approx0.5$) films with the self-organized distribution of crystallites over their shapes and sizes”, Pis'ma v Zh. Èksper. Teoret. Fiz., 103:7 (2016), 539–546 ; JETP Letters, 103:7 (2016), 476–483 |
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2013 |
| 6. |
V. A. Gudkov, A. S. Vedeneev, V. V. Ryl'kov, M. P. Temiryazeva, A. M. Kozlov, S. N. Nikolaev, M. A. Pankov, A. N. Golovanov, A. S. Semisalova, N. S. Perov, M. P. Duhnovskii, A. S. Bugaev, “Synthesis of spatially ordered ensemble of Co nanocylinders in porous alumina matrix on surface of GaAs structures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:18 (2013), 17–24 ; Tech. Phys. Lett., 39:9 (2013), 805–807 |
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1992 |
| 7. |
A. S. Vedeneev, A. G. Gaivoronskii, A. G. Zhdan, “Определение электронных характеристик границ раздела полупроводник$-$диэлектрик по полевым зависимостям электропроводности
и емкости инверсионных каналов МДП транзисторов”, Fizika i Tekhnika Poluprovodnikov, 26:12 (1992), 2017–2023 |
| 8. |
A. S. Vedeneev, A. G. Zhdan, V. V. Ryl'kov, A. G. Shafran, “Determination of photoionization cross-section for doping impurities in semiconductors using Hall-effect measurements”, Fizika i Tekhnika Poluprovodnikov, 26:6 (1992), 1096–1099 |
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