|
|
|
Publications in Math-Net.Ru |
Citations |
|
2024 |
| 1. |
M. A. Putyato, V. V. Preobrazhenskii, B. R. Semyagin, N. V. Protasevich, I. B. Chistokhin, M. O. Petrushkov, E. A. Emelyanov, A. V. Vasev, A. F. Skachkov, V. V. Oleinik, S. V. Yanchur, A. V. Drondin, “InGaP/GaAs/Ge triple-junction solar cell with a thinned germanium substrate”, Zhurnal Tekhnicheskoi Fiziki, 94:5 (2024), 783–794   |
| 2. |
D. S. Abramkin, M. O. Petrushkov, D. B. Bogomolov, E. A. Emelyanov, M. A. Putyato, V. V. Preobrazhenskii, “Formation of self-assembled quantum dots during GaSbP deposition on AlP surface”, Fizika i Tekhnika Poluprovodnikov, 58:4 (2024), 185–191 |
|
2023 |
| 3. |
M. A. Putyato, E. A. Emelyanov, M. O. Petrushkov, A. V. Vasev, B. R. Semyagin, V. V. Preobrazhenskii, “GaP$_x$As$_{1-x}$ solid solution growth by molecular beam epitaxy: phenomenological description of the $x$ dependence from growth conditions on GaAs(001) substrate”, Fizika i Tekhnika Poluprovodnikov, 57:2 (2023), 79–88 |
| 4. |
E. A. Emelyanov, T. A. Del, M. O. Petrushkov, A. G. Nastovjak, A. A. Spirina, T. A. Gavrilova, B. R. Semyagin, A. V. Vasev, M. A. Putyato, V. V. Preobrazhenskii, “Arrays of quasi-one-dimensional GaAs nanocrystals grown on the oxidized surface of the Si/GaAs(001) heterostructure: effect of the Si epitaxial layer on the array structure”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:3 (2023), 37–41 |
|
2022 |
| 5. |
M. O. Petrushkov, M. A. Putyato, A. V. Vasev, D. S. Abramkin, E. A. Emelyanov, I. D. Loshkarev, O. S. Komkov, D. D. Firsov, V. V. Preobrazhenskii, “Molecular beam epitaxy of GaSb on vicinal Si(001) substrates: influence of the conditions of layer nucleation on their structural and optical properties”, Fizika i Tekhnika Poluprovodnikov, 56:10 (2022), 980–992 |
|
2021 |
| 6. |
D. S. Abramkin, M. O. Petrushkov, E. A. Emelyanov, A. V. Nenashev, M. Yu. Yesin, A. V. Vasev, M. A. Putyato, D. B. Bogomolov, A. K. Gutakovskii, V. V. Preobrazhenskii, “Formation of InAs/GaP heterostructures with quantum wells on silicon substrates by molecular beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 55:2 (2021), 139–146 ; Semiconductors, 55:2 (2021), 194–201 |
7
|
|
2020 |
| 7. |
M. O. Petrushkov, D. S. Abramkin, E. A. Emelyanov, M. A. Putyato, A. V. Vasev, I. D. Loshkarev, M. Yu. Yesin, O. S. Komkov, D. D. Firsov, V. V. Preobrazhenskii, “Effect of the crystallographic orientation of GaSb films on their structural properties during MBE heteroepitaxy on vicinal Si(001) substrates”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1289–1295 ; Semiconductors, 54:12 (2020), 1548–1554 |
3
|
| 8. |
V. V. Utochkin, M. A. Fadeev, S. S. Krishtopenko, V. V. Rumyantsev, V. Ya. Aleshkin, A. A. Dubinov, S. V. Morozov, B. R. Semyagin, M. A. Putyato, E. A. Emelyanov, V. V. Preobrazhenskii, V. I. Gavrilenko, “Photoluminescence spectra of InAs/GaInSb/InAs quantum wells in the mid-infrared region”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 929–932 ; Semiconductors, 54:9 (2020), 1119–1122 |
2
|
| 9. |
E. A. Emelyanov, A. G. Nastovjak, M. O. Petrushkov, M. Yu. Yesin, T. A. Gavrilova, M. A. Putyato, N. L. Shwartz, V. A. Shvets, A. V. Vasev, B. R. Semyagin, V. V. Preobrazhenskii, “A mask based on a Si epitaxial layer for the self-catalytic nanowire growth on GaAs (111)$B$ and GaAs (100) substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:4 (2020), 11–14 ; Tech. Phys. Lett., 46:2 (2020), 161–164 |
1
|
|
2019 |
| 10. |
M. A. Putyato, N. A. Valisheva, M. O. Petrushkov, V. V. Preobrazhenskii, I. B. Chistokhin, B. R. Semyagin, E. A. Emelyanov, A. V. Vasev, A. F. Skachkov, G. I. Yurko, I. I. Nesterenko, “A lightweight flexible solar cell based on a heteroepitaxial InGaP/GaAs structure”, Zhurnal Tekhnicheskoi Fiziki, 89:7 (2019), 1071–1078 ; Tech. Phys., 64:7 (2019), 1010–1016 |
4
|
| 11. |
D. S. Abramkin, M. O. Petrushkov, M. A. Putyato, B. R. Semyagin, E. A. Emelyanov, V. V. Preobrazhenskii, A. K. Gutakovskii, T. S. Shamirzaev, “GaAs/GaP quantum-well heterostructures grown on Si substrates”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1167–1171 ; Semiconductors, 53:9 (2019), 1143–1147 |
7
|
| 12. |
E. A. Emelyanov, A. V. Vasev, B. R. Semyagin, M. Yu. Yesin, I. D. Loshkarev, A. P. Vasilenko, M. A. Putyato, M. O. Petrushkov, V. V. Preobrazhenskii, “The growth of InAs$_{x}$Sb$_{1-x}$ solid solutions on miscuted GaAs(001) substrates by molecular-beam epitaxy method”, Fizika i Tekhnika Poluprovodnikov, 53:4 (2019), 512–519 ; Semiconductors, 53:4 (2019), 503–510 |
2
|
|
2018 |
| 13. |
M. O. Petrushkov, M. A. Putyato, I. B. Chistokhin, B. R. Semyagin, E. A. Emelyanov, M. Yu. Yesin, T. A. Gavrilova, A. V. Vasev, V. V. Preobrazhenskii, “Zinc diffusion into InP via a narrow gap from a planar Zn$_{3}$P$_{2}$-based source”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:14 (2018), 19–25 ; Tech. Phys. Lett., 44:7 (2018), 612–614 |
2
|
|
2017 |
| 14. |
S. Ruffenach, S. S. Krishtopenko, L. S. Bovkun, A. V. Ikonnikov, M. Marcinkiewicz, C. Consejo, M. Potemski, B. Piot, M. Orlita, B. R. Semyagin, M. A. Putyato, E. A. Emelyanov, V. V. Preobrazhenskii, W. Knap, F. Gonzalez-Posada, G. Boissier, E. Tournié, F. Teppe, V. I. Gavrilenko, “Magnetoabsorption of Dirac fermions in InAs/GaSb/InAs “Three-Layer” gapless quantum wells”, Pis'ma v Zh. Èksper. Teoret. Fiz., 106:11 (2017), 696–701 ; JETP Letters, 106:11 (2017), 727–732   |
7
|
| 15. |
A. Kononov, S. V. Egorov, N. Titova, B. R. Semyagin, V. V. Preobrazhenskii, M. A. Putyato, E. A. Emelyanov, E. V. Deviatov, “Interlayer current near the edge of an $\mathrm{InAs/GaSb}$ double quantum well in proximity with a superconductor”, Pis'ma v Zh. Èksper. Teoret. Fiz., 105:8 (2017), 497–498 ; JETP Letters, 105:8 (2017), 508–513 |
| 16. |
D. S. Abramkin, A. K. Bakarov, M. A. Putyato, E. A. Emelyanov, D. A. Kolotovkina, A. K. Gutakovskii, T. S. Shamirzaev, “Formation of low-dimensional structures in the InSb/AlAs heterosystem”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1282–1288 ; Semiconductors, 51:9 (2017), 1233–1239 |
7
|
| 17. |
S. S. Krishtopenko, A. V. Ikonnikov, K. V. Marem'yanin, L. S. Bovkun, K. E. Spirin, A. M. Kadykov, M. Marcinkiewicz, S. Ruffenach, C. Consejo, F. Teppe, W. Knap, B. R. Semyagin, M. A. Putyato, E. A. Emelyanov, V. V. Preobrazhenskii, V. I. Gavrilenko, “Cyclotron resonance of Dirac fermions in InAs/GaSb/InAs quantum wells”, Fizika i Tekhnika Poluprovodnikov, 51:1 (2017), 40–44 ; Semiconductors, 51:1 (2017), 38–42 |
5
|
|
2016 |
| 18. |
A. Kononov, S. V. Egorov, V. A. Kostarev, B. R. Semyagin, V. V. Preobrazhenskii, M. A. Putyato, E. A. Emelyanov, E. V. Deviatov, “Specular Andreev reflection at the edge of an InAs/GaSb double quantum well with band inversion”, Pis'ma v Zh. Èksper. Teoret. Fiz., 104:1 (2016), 24–25 ; JETP Letters, 104:1 (2016), 26–31 |
2
|
|
2015 |
| 19. |
E. A. Emelyanov, M. A. Putyato, B. R. Semyagin, D. F. Feklin, V. V. Preobrazhenskii, “Molecular beam epitaxy of A$^{\mathrm{III}}$P$_x$As$_{1-x}$ solid solutions: Mechanism of composition formation in the sublattice of a group V element”, Fizika i Tekhnika Poluprovodnikov, 49:2 (2015), 163–170 ; Semiconductors, 49:2 (2015), 157–165 |
5
|
|
| Organisations |
|
|
