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Publications in Math-Net.Ru |
Citations |
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2024 |
| 1. |
V. S. Khoroshilov, G. È. Shaibler, D. M. Kazantsev, S. A. Rozhkov, V. L. Alperovich, “Photoelectron transfer through $p$-GaAs(Cs, O)–vacuum interface with positive and negative electron affinity”, Fizika i Tekhnika Poluprovodnikov, 58:5 (2024), 227–232   |
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2023 |
| 2. |
V. S. Khoroshilov, D. M. Kazantsev, S. A. Rozhkov, V. L. Alperovich, “Surface photovoltage in heavily doped $p^+$-GaAs with adsorbed cesium and oxygen overlayers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:21 (2023), 24–28 |
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2018 |
| 3. |
V. V. Bakin, S. N. Kosolobov, S. A. Rozhkov, H. E. Sheibler, A. S. Terekhov, “Atomic rearrangements and photoemission processes at a $p$-GaN(Cs)-vacuum interface”, Pis'ma v Zh. Èksper. Teoret. Fiz., 108:3 (2018), 180–184 ; JETP Letters, 108:3 (2018), 180–184   |
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2016 |
| 4. |
S. A. Rozhkov, V. V. Bakin, D. V. Gorshkov, S. N. Kosolobov, H. E. Sheibler, A. S. Terekhov, “Optical phonon cascade emission by photoelectrons at a p-GaN (Cs,O)-vacuum interface”, Pis'ma v Zh. Èksper. Teoret. Fiz., 104:2 (2016), 128–132 ; JETP Letters, 104:2 (2016), 135–139 |
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