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Publications in Math-Net.Ru |
Citations |
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2018 |
| 1. |
M. Yu. Yesin, A. I. Nikiforov, V. A. Timofeev, A. R. Tuktamyshev, V. I. Mashanov, I. D. Loshkarev, A. S. Deryabin, O. P. Pchelyakov, “Formation of a stepped Si(100) surface and its effect on the growth of Ge islands”, Fizika i Tekhnika Poluprovodnikov, 52:3 (2018), 409–413   ; Semiconductors, 52:3 (2018), 390–393 |
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2017 |
| 2. |
V. A. Volodin, V. A. Timofeev, A. R. Tuktamyshev, A. I. Nikiforov, “Splitting of frequencies of optical phonons in tensile-strained germanium layers”, Pis'ma v Zh. Èksper. Teoret. Fiz., 105:5 (2017), 305–310 ; JETP Letters, 105:5 (2017), 327–331   |
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| 3. |
A. A. Bloshkin, A. I. Yakimov, V. A. Timofeev, A. R. Tuktamyshev, A. I. Nikiforov, V. V. Murashov, “Valence-band offsets in strained SiGeSn/Si layers with different tin contents”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 342–347 ; Semiconductors, 51:3 (2017), 329–334 |
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2016 |
| 4. |
V. A. Timofeev, A. I. Nikiforov, A. R. Tuktamyshev, M. Yu. Yesin, V. I. Mashanov, A. K. Gutakovskii, N. A. Baidakova, “Strained multilayer structures with pseudomorphic GeSiSn layers”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1610–1614 ; Semiconductors, 50:12 (2016), 1584–1588 |
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2015 |
| 5. |
A. R. Tuktamyshev, V. I. Mashanov, V. A. Timofeev, A. I. Nikiforov, S. A. Teys, “Initial growth stages of Si–Ge–Sn ternary alloys grown on Si (100) by low-temperature molecular-beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 49:12 (2015), 1630–1634 ; Semiconductors, 49:12 (2015), 1582–1586 |
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