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Publications in Math-Net.Ru |
Citations |
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1992 |
| 1. |
P. V. Pavlov, E. S. Demidov, V. V. Karzanov, “Effect of long-range interaction in GaAs and InP semi-insulating semiconductors under argon-ion irradiation”, Fizika i Tekhnika Poluprovodnikov, 26:6 (1992), 1148–1150  |
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1984 |
| 2. |
V. K. Vasil'ev, V. N. Novozhilov, P. V. Pavlov, “RESISTOMETRIC STUDY METHOD OF KINETICS OF ION-IMPLANTATION PROCESSES”, Zhurnal Tekhnicheskoi Fiziki, 54:11 (1984), 2263–2266 |
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1981 |
| 3. |
P. V. Pavlov, “Investigation of the ion bombardment influence upon the structure of $\mathrm{SiO}_2$ amorphous
films”, Dokl. Akad. Nauk SSSR, 258:3 (1981), 617–619 |
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1979 |
| 4. |
P. V. Pavlov, D. I. Tetelbaum, A. I. Gerasimov, “The short-range order in $\mathrm{InSb}$, arriorphized by the ion bombardment”, Dokl. Akad. Nauk SSSR, 248:6 (1979), 1335–1337 |
| 5. |
P. V. Pavlov, Yu. A. Danilov, V. S. Tulovchikov, “Morphological and structural changes of $\mathrm{InSb}$ at ion bombardment”, Dokl. Akad. Nauk SSSR, 248:5 (1979), 1111–1114 |
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1978 |
| 6. |
P. V. Pavlov, N. V. Belov, “The mechanism of $\alpha$-, $\beta$-transition of $\mathrm{Si}_3\mathrm{N}_4$ during the annealing”, Dokl. Akad. Nauk SSSR, 241:4 (1978), 825–827 |
| 7. |
P. V. Pavlov, “Effect of excess silicon on the formation of $\alpha$-$\mathrm{Si}_3\mathrm{N}_4$ in the ionic implantation of nitrogen”, Dokl. Akad. Nauk SSSR, 240:5 (1978), 1108–1110 |
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1974 |
| 8. |
P. V. Pavlov, D. I. Tetelbaum, A. V. Pavlov, E. I. Zorin, “Structural transformations during the bombardment of iron, nickel, and molybdenum with
$\mathrm{Ar}^+$, $\mathrm{N}^+$ and $\mathrm{C}^+$ ions”, Dokl. Akad. Nauk SSSR, 217:2 (1974), 330–332 |
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1973 |
| 9. |
P. V. Pavlov, “Structure of the short-range order of amorfous germanium obtained by ionic bombardment”, Dokl. Akad. Nauk SSSR, 208:2 (1973), 350–352 |
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1970 |
| 10. |
P. V. Pavlov, È. V. Shitova, E. I. Zorin, “Crystallization of amorphous silicon dioxide films during ion bombardment and subsequent annealing”, Dokl. Akad. Nauk SSSR, 192:3 (1970), 559–561 |
| 11. |
A. I. Gerasimov, E. I. Zorin, P. V. Pavlov, D. I. Tetelbaum, “Relationship between the amorphization and the point defect formation during ionic bombardment of germanium and silicon”, Dokl. Akad. Nauk SSSR, 192:2 (1970), 324–326 |
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1967 |
| 12. |
P. V. Pavlov, D. I. Tetelbaum, “Structure of amorphous germanium obtained from crystalline germanium by bombardment with argon ions”, Dokl. Akad. Nauk SSSR, 175:4 (1967), 823–825 |
| 13. |
P. V. Pavlov, È. V. Shitova, “The structure of the oxide films obtained by bombarding the surface of silicon with oxygen ions”, Dokl. Akad. Nauk SSSR, 172:3 (1967), 588–590 |
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