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Publications in Math-Net.Ru |
Citations |
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2022 |
| 1. |
P. A. Bokhan, K. S. Zhuravlev, D. È. Zakrevskii, T. V. Malin, I. V. Osinnykh, N. V. Fateev, “Stimulated emission in the heavily doped Al$_{0.68}$Ga$_{0.32}$N : Si structures with transverse optical pumping at room temperature”, Fizika i Tekhnika Poluprovodnikov, 56:12 (2022), 1125–1131   |
| 2. |
I. V. Osinnykh, I. A. Aleksandrov, T. V. Malin, K. S. Zhuravlev, “Determination of the types of optical transitions and concentrations of donors and acceptors in GaN by the dependence of photoluminescence intensity on the excitation power”, Fizika i Tekhnika Poluprovodnikov, 56:8 (2022), 802–807 |
| 3. |
I. V. Osinnykh, T. V. Malin, A. S. Kozhukhov, B. Ya. Ber, D. Yu. Kazantsev, K. S. Zhuravlev, “Transformation of N-polar inversion domains from AlN buffer layers during the growth of AlGaN layers”, Fizika i Tekhnika Poluprovodnikov, 56:7 (2022), 677–684 |
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2021 |
| 4. |
P. A. Bokhan, K. S. Zhuravlev, D. È. Zakrevskii, T. V. Malin, I. V. Osinnykh, N. V. Fateev, “Features of optical gain in heavily doped Al$_{x}$Ga$_{1-x}$N:Si-structures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:14 (2021), 39–42 ; Tech. Phys. Lett., 47:9 (2021), 692–695 |
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2019 |
| 5. |
P. A. Bokhan, K. S. Zhuravlev, D. È. Zakrevskii, T. V. Malin, I. V. Osinnykh, N. V. Fateev, “Optical gain in heavily doped Al$_{x}$Ga$_{1-x}$N : Si structures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:18 (2019), 48–51 ; Tech. Phys. Lett., 45:9 (2019), 951–954 |
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2018 |
| 6. |
V. V. Ratnikov, M. P. Scheglov, B. Ya. Ber, D. Yu. Kazantsev, I. V. Osinnykh, T. V. Malin, K. S. Zhuravlev, “Change in the character of biaxial stresses with an increase in $x$ from 0 to 0.7 in Al$_{x}$Ga$_{1-x}$N:Si layers obtained by ammonia molecular beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 52:2 (2018), 233–237 ; Semiconductors, 52:2 (2018), 221–225 |
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| 7. |
P. A. Bokhan, K. S. Zhuravlev, D. È. Zakrevskii, T. V. Malin, I. V. Osinnykh, N. V. Fateev, “Amplified luminescence of heavily doped Al<sub>x</sub>Ga<sub>1-x</sub>N structures under optical pumping”, Kvantovaya Elektronika, 48:3 (2018), 215–221 [Quantum Electron., 48:3 (2018), 215–221   ] |
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2017 |
| 8. |
P. A. Bokhan, K. S. Zhuravlev, Dm. È. Zakrevskii, T. V. Malin, I. V. Osinnykh, N. V. Fateev, “Radiation enhancement in doped AlGaN-structures upon optical pumping”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:1 (2017), 5–13 ; Tech. Phys. Lett., 43:1 (2017), 46–49 |
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2014 |
| 9. |
I. V. Osinnykh, K. S. Zhuravlev, T. V. Malin, B. Ya. Ber, D. Yu. Kazantsev, “Decrease in the binding energy of donors in heavily doped GaN:Si layers”, Fizika i Tekhnika Poluprovodnikov, 48:9 (2014), 1164–1168 ; Semiconductors, 48:9 (2014), 1134–1138 |
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