thermomigration,
normal and tangential gradients,
modeling,
security ring.
Subject:
Application of the thermal migration method for creation of solid-state electronics devices
Main publications:
V.V. Kuznetsov, V.N. Lozovskii, V.P. Popov, E.R. Rubtsov, B.M. Seredin, “Kinetics in the Si–Al–Ga and Si–Al–Sn Systems”, Inorganic Materials, 54:1 (2018), 32-36
Knyazev, S.Y., Lozovskii, V.N., Lozovskii, B.M. Seredin, “Manifestations of induced instability of phase boundaries during thermomigration”, Tech. Phys. Lett., 42:10 (2016), 1045-1048
Lozovskiy, V.N., Seredin, B.M., Arkhipova, N.Yu., “Local Doping of Semiconductor Crystals by Thermomigration”, Materials Engineering and Technologies for Production and Processing, Materials Science Forum, 843, 2016, 46-52
Sysoev I.A., Lunina M.L., Alfimova D.L., Blagin A.V., Gusev D.A., Seredin B.M., “Growth of GaxIn1-x AsyP1-y /GaAs Quantum dot arrays by ion beam deposition”, Inorganic Materials, 50:3 (2014), 215-221
B. M. Seredin, V. P. Popov, A. V. Malibashev, A. D. Stepchenko, A. N. Zaichenko, “Application of carbon for the formation of discrete aluminum-based zones during their thermomigration in silicon”, Fizika i Tekhnika Poluprovodnikov, 59:5 (2025), 302–305
2.
M. A. Tarasov, A. A. Lomov, A. M. Chekushkin, A. A. Tatarintsev, B. M. Seredin, M. A. Markina, E. F. Pozdniakova, A. D. Golovanova, M. V. Strelkov, D. S. Zhogov, R. K. Kozulin, K. Yu. Arutyunov, “Morphology and electrical parameters of thin aluminum films deposited on substrates at temperatures from 77 to 800 K”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:4 (2025), 42–45
2024
3.
B. M. Seredin, V. P. Popov, A. V. Malibashev, A. D. Stepchenko, “Transformation of the circular zone during thermal migration in silicon in the direction $\langle$100$\rangle$”, Fizika i Tekhnika Poluprovodnikov, 58:9 (2024), 489–492
4.
B. M. Seredin, V. P. Popov, A. V. Malibashev, “The effect of transformation of a square-shaped linear zone during its migration through a $\{100\}$ silicon wafer”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:7 (2024), 17–19
2023
5.
B. M. Seredin, V. P. Popov, A. N. Zaichenko, A. V. Malibashev, I. V. Gavrus, A. A. Mintsev, A. A. Skidanov, “Creation of a homogeneous temperature gradient field for the implementation of the thermomigration method in silicon”, Fizika Tverdogo Tela, 65:12 (2023), 2051–2054
2021
6.
A. A. Lomov, B. M. Seredin, S. Yu. Martyushov, A. N. Zaichenko, I. L. Shul'pina, “The formation and structure of thermomigration silicon channels doped with Ga”, Zhurnal Tekhnicheskoi Fiziki, 91:3 (2021), 467–474; Tech. Phys., 66:3 (2021), 453–460
A. A. Lomov, B. M. Seredin, S. Yu. Martyushov, A. N. Zaichenko, S. G. Simakin, I. L. Shul'pina, “Structural perfection and composition of gallium-doped thermomigration silicon layers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:6 (2020), 27–30; Tech. Phys. Lett., 46:3 (2020), 279–282
T. T. Ěnatsakanov, M. E. Levinshteĭn, V. B. Shuman, B. M. Seredin, “On the limit of the injection ability of silicon $p^{+}$–$n$ junctions as a result of fundamental physical effects”, Fizika i Tekhnika Poluprovodnikov, 51:6 (2017), 830–834; Semiconductors, 51:6 (2017), 798–802
V. N. Lozovskii, A. A. Lomov, L. S. Lunin, B. M. Seredin, Yu. M. Chesnokov, “Crystal defects in solar cells produced by the method of thermomigration”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 297–301; Semiconductors, 51:3 (2017), 285–289
S. Yu. Knyazev, V. N. Lozovskii, V. S. Lozovskii, B. M. Seredin, “Manifestations of induced instability of phase boundaries during thermomigration”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:20 (2016), 49–56; Tech. Phys. Lett., 42:10 (2016), 1045–1048
