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Publications in Math-Net.Ru |
Citations |
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2015 |
| 1. |
P. A. Aleksandrov, N. E. Belova, K. D. Demakov, S. G. Shemardov, “On the generation of charge-carrier recombination centers in the sapphire substrates of silicon-on-sapphire structures”, Fizika i Tekhnika Poluprovodnikov, 49:8 (2015), 1124–1128   ; Semiconductors, 49:8 (2015), 1099–1103 |
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2013 |
| 2. |
P. A. Aleksandrov, K. D. Demakov, S. G. Shemardov, Yu. Yu. Kuznetsov, “Recrystallization of silicon-on-sapphire structures at various amorphization-ion-beam energies”, Fizika i Tekhnika Poluprovodnikov, 47:2 (2013), 264–266 ; Semiconductors, 47:2 (2013), 298–300 |
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1990 |
| 3. |
P. A. Aleksandrov, E. K. Baranova, V. V. Budaragin, K. D. Demakov, E. V. Kotov, A. P. Novikov, S. G. Shemardov, “Высокотемпературная ионная имплантация мышьяка в кремний”, Fizika i Tekhnika Poluprovodnikov, 24:6 (1990), 1132–1133 |
| 4. |
P. A. Aleksandrov, E. K. Baranova, V. V. Budaragin, K. D. Demakov, E. V. Kotov, S. G. Shemardov, “SYNTHESIS OF SI3N4 AMORPHOUS FILMS DURING NITROGEN ION-IMPLANTATION TO
SILICON”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:23 (1990), 43–45 |
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1988 |
| 5. |
P. A. Aleksandrov, E. K. Baranova, A. E. Gorodetsky, K. D. Demakov, O. G. Kutukova, S. G. Shemardov, “Исследование распределения аморфной и кристаллической фазы
ионно-синтезированного SiC в Si”, Fizika i Tekhnika Poluprovodnikov, 22:4 (1988), 731–732 |
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1987 |
| 6. |
Yu. A. Vodakov, K. D. Demakov, E. V. Kalinina, E. N. Mokhov, M. G. Ramm, G. F. Kholuyanov, “Electric Properties of $p{-}n{-}n^{+}$ Structure in Silicon Carbide Produced by Ionic Doping of Aluminum”, Fizika i Tekhnika Poluprovodnikov, 21:9 (1987), 1685–1689 |
| 7. |
P. A. Aleksandrov, E. K. Baranova, K. D. Demakov, A. S. Ignat'ev, F. F. Komarov, A. P. Novikov, “Study of the Formation of $\beta$-SiC Monocrystalline Layers on Si by the Method of Highly Intense Ionic Doping”, Fizika i Tekhnika Poluprovodnikov, 21:5 (1987), 920–922 |
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1986 |
| 8. |
P. A. Aleksandrov, E. K. Baranova, K. D. Demakov, F. F. Komarov, A. P. Novikov, S. Yu. Shiryaev, “Synthesis of Monocrystalline Silicon Carbide by Single-Step Equipment of Highly Intense Ion Doping”, Fizika i Tekhnika Poluprovodnikov, 20:1 (1986), 149–152 |
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1985 |
| 9. |
Yu. M. Suleimanov, V. M. Grekhov, K. D. Demakov, I. V. Plyuto, “Vibration structure of $D_{1}$-spectra in cubic $\mathrm{SiC}$”, Fizika Tverdogo Tela, 27:10 (1985), 3170–3172 |
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1984 |
| 10. |
È. E. Violin, K. D. Demakov, A. A. Kal'nin, F. Noibert, E. N. Potapov, Yu. M. Tairov, “$\mathrm{SiC}$ layer structure reduction after ion implantation”, Fizika Tverdogo Tela, 26:5 (1984), 1575–1577 |
| 11. |
V. G. Oding, Yu. A. Vodakov, E. V. Kalinina, E. N. Mokhov, K. D. Demakov, V. G. Stolyarova, G. F. Goluyanov, “Cathodoluminescence of SiC Ion-Doped by Aland Ar”, Fizika i Tekhnika Poluprovodnikov, 18:4 (1984), 700–703 |
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1971 |
| 12. |
V. M. Gusev, N. P. Busharov, K. D. Demakov, Yu. G. Kozlov, “The effect of channelling on the distribution of electrically active boron and phosphorus atoms intruded into silicon single crystals”, Dokl. Akad. Nauk SSSR, 197:2 (1971), 319–322 |
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