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Publications in Math-Net.Ru |
Citations |
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2019 |
| 1. |
N. K. Morozova, I. N. Miroshnikova, V. G. Galstyan, “Analysis of the optical properties of plastically deformed ZnS(O) using band-anticrossing theory”, Fizika i Tekhnika Poluprovodnikov, 53:6 (2019), 793–798   ; Semiconductors, 53:6 (2019), 784–788 |
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2015 |
| 2. |
N. K. Morozova, V. G. Galstyan, A. O. Volkov, V. E. Mashchenko, “Optical properties of ion-doped ZnO(Se) layers in the context of band anticrossing theory”, Fizika i Tekhnika Poluprovodnikov, 49:9 (2015), 1169–1174 ; Semiconductors, 49:9 (2015), 1134–1139 |
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2013 |
| 3. |
N. K. Morozova, A. A. Kanakhin, I. N. Miroshnikova, V. G. Galstyan, “Optical properties of oxygen-implanted CdS:O layers in terms of band anticrossing theory”, Fizika i Tekhnika Poluprovodnikov, 47:8 (2013), 1014–1021 ; Semiconductors, 47:8 (2013), 1018–1025 |
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1987 |
| 4. |
V. R. Regel, V. A. Nikitenko, I. P. Kuz'mina, V. G. Galstyan, T. P. Dolukhonyan, S. Ph. Nikul'shin, N. L. Sizova, V. A. Skuratov, “EFFECT OF BOMBARDMENT WITH HIGH-ENERGY HEAVY-IONS ON OPTICAL-PROPERTIES
AND DEFECTS IN MONOCRYSTALS OF ZINC-OXIDE”, Zhurnal Tekhnicheskoi Fiziki, 57:2 (1987), 306–310 |
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1980 |
| 5. |
M. Sh. Akchurin, V. G. Galstyan, “MCL investigation of the strengthening of YAG surface layers”, Dokl. Akad. Nauk SSSR, 252:4 (1980), 870–872 |
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