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Publications in Math-Net.Ru |
Citations |
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2026 |
| 1. |
O. E. Lakuntsova, G. V. Klimko, I. V. Sedova, S. A. Khakhulin, D. D. Firsov, O. S. Komkov, Yu. M. Serov, A. I. Veretennikov, G. P. Veishtort, A. V. Myasoedov, S. V. Sorokin, “Оптическая спектроскопия метаморфных гетероструктур с квантовыми точками InAs/InGaAs, излучающими в диапазоне $\sim$ 1.55 мкм”, Pis'ma v Zh. Èksper. Teoret. Fiz., 123:1 (2026), 3–12  |
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2025 |
| 2. |
D. V. Kolyada, D. D. Firsov, O. S. Komkov, I. V. Skvortsov, V. I. Mashanov, I. D. Loshkarev, V. A. Timofeev, “Effect of Ge nanolayers and quantum dots on photoluminescence properties of GeSiSn/Si heterostructures”, Fizika Tverdogo Tela, 67:9 (2025), 1642–1646  |
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2024 |
| 3. |
M. S. Ruzhevich, K. J. Mynbaev, D. D. Firsov, I. V. Chumanov, O. S. Komkov, V. S. Varavin, M. V. Yakushev, “Infrared photoreflectance of Cd$_{0.3}$Hg$_{0.7}$Te epitaxial films”, Fizika i Tekhnika Poluprovodnikov, 58:10 (2024), 544–547 |
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2023 |
| 4. |
M. S. Ruzhevich, D. D. Firsov, O. S. Komkov, K. J. Mynbaev, V. S. Varavin, M. V. Yakushev, “Photoluminescence of arsenic doped epitaxial films of Cd$_{0.3}$Hg$_{0.7}$Te”, Fizika i Tekhnika Poluprovodnikov, 57:6 (2023), 491–494 |
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2022 |
| 5. |
M. O. Petrushkov, M. A. Putyato, A. V. Vasev, D. S. Abramkin, E. A. Emelyanov, I. D. Loshkarev, O. S. Komkov, D. D. Firsov, V. V. Preobrazhenskii, “Molecular beam epitaxy of GaSb on vicinal Si(001) substrates: influence of the conditions of layer nucleation on their structural and optical properties”, Fizika i Tekhnika Poluprovodnikov, 56:10 (2022), 980–992 |
| 6. |
D. V. Kolyada, D. D. Firsov, V. A. Timofeev, V. I. Mashanov, A. A. Karaborchev, O. S. Komkov, “Investigation of the effect of annealing and composition on infrared photoluminescence of GeSiSn/Si multiple quantum well nanoheterostructures”, Fizika i Tekhnika Poluprovodnikov, 56:8 (2022), 765–769 |
| 7. |
A. V. Afanasyev, V. I. Zubkov, V. A. Ilyin, V. V. Luchinin, M. V. Pavlova, M. F. Panov, V. V. Trushlyakova, D. D. Firsov, “Determination of thickness and doping features of multilayer $4H$–$\mathrm{SiC}$ structures by frequency analysis of IR reflection spectra”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:2 (2022), 34–36 |
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2020 |
| 8. |
A. I. Luferau, D. D. Firsov, O. S. Komkov, “Registration of infrared photoluminescence spectra using gated integration technique in active baseline subtraction mode”, Optics and Spectroscopy, 128:1 (2020), 134–139 ; Optics and Spectroscopy, 128:1 (2020), 131–136 |
| 9. |
M. O. Petrushkov, D. S. Abramkin, E. A. Emelyanov, M. A. Putyato, A. V. Vasev, I. D. Loshkarev, M. Yu. Yesin, O. S. Komkov, D. D. Firsov, V. V. Preobrazhenskii, “Effect of the crystallographic orientation of GaSb films on their structural properties during MBE heteroepitaxy on vicinal Si(001) substrates”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1289–1295 ; Semiconductors, 54:12 (2020), 1548–1554 |
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| 10. |
O. S. Komkov, S. A. Khakhulin, D. D. Firsov, P. S. Avdienko, I. V. Sedova, S. V. Sorokin, “Investigation of built-in electric fields at the GaSe/GaAs interface by photoreflectance spectroscopy”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1011–1017 ; Semiconductors, 54:10 (2020), 1198–1204 |
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2019 |
| 11. |
V. A. Solov'ev, M. Yu. Chernov, O. S. Komkov, D. D. Firsov, A. A. Sitnikova, S. V. Ivanov, “Effect of strongly mismatched GaAs and InAs inserts in a InAlAs buffer layer on the structural and optical properties of metamorphic InAs(Sb)/InGaAs/InAlAs/GaAs quantum-confined heterostructures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 109:6 (2019), 381–386 ; JETP Letters, 109:6 (2019), 377–381   |
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2016 |
| 12. |
O. S. Komkov, D. D. Firsov, T. V. L'vova, I. V. Sedova, A. N. Semenov, V. A. Solov'ev, S. V. Ivanov, “Photoreflectance of indium antimonide”, Fizika Tverdogo Tela, 58:12 (2016), 2307–2313 ; Phys. Solid State, 58:12 (2016), 2394–2400 |
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| 13. |
V. A. Solov'ev, M. Yu. Chernov, B. Ya. Mel'tser, A. N. Semenov, Ya. V. Terent'ev, D. D. Firsov, O. S. Komkov, S. V. Ivanov, “Metamorphic InAs/InGaAs/InAlAs quantum wells with submonolayer InSb insertions emitted in the mid-infrared spectral range”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:20 (2016), 33–39 ; Tech. Phys. Lett., 42:10 (2016), 1038–1040 |
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2013 |
| 14. |
O. S. Komkov, D. D. Firsov, A. N. Semenov, B. Ya. Mel'tser, S. I. Troshkov, A. N. Pikhtin, S. V. Ivanov, “Determination of the thickness and spectral dependence of the refractive index of Al$_x$In$_{1-x}$Sb epitaxial layers from reflectance spectra”, Fizika i Tekhnika Poluprovodnikov, 47:2 (2013), 258–263 ; Semiconductors, 47:2 (2013), 292–297 |
9
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| 15. |
D. D. Firsov, O. S. Komkov, “Photomodulation Fourier transform infrared spectroscopy of semiconductor structures: Features of phase correction and application of method”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:23 (2013), 87–94 ; Tech. Phys. Lett., 39:12 (2013), 1071–1073 |
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2011 |
| 16. |
O. S. Komkov, A. N. Semenov, D. D. Firsov, B. Ya. Mel'tser, V. A. Solov'ev, T. V. Popova, A. N. Pikhtin, S. V. Ivanov, “Optical Properties of Epitaxial Al$_x$In$_{1-x}$Sb Alloy Layers”, Fizika i Tekhnika Poluprovodnikov, 45:11 (2011), 1481–1485 ; Semiconductors, 45:11 (2011), 1425–1429 |
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