|
|
|
Publications in Math-Net.Ru |
Citations |
|
2019 |
| 1. |
E. V. Lutsenko, N. V. Rzheutskii, A. G. Voinilovich, I. E. Svitsiankou, A. V. Nagorny, V. A. Shulenkova, G. P. Yablonskii, A. N. Alekseev, S. I. Petrov, Ya. A. Solov'ev, A. N. Pyatlitski, D. V. Zhigulin, V. A. Solodukha, “Stimulated emission of AlGaN layers grown on sapphire substrates using ammonia molecular beam epitaxy”, Kvantovaya Elektronika, 49:6 (2019), 540–544   [Quantum Electron., 49:6 (2019), 540–544   ] |
3
|
|
2017 |
| 2. |
A. N. Alekseev, V. V. Mamaev, S. I. Petrov, “Study of the influence of Ga as a surfactant during the high-temperature ammonia MBE of AlN layers on the properties of nitride heterostructures”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1507–1509 ; Semiconductors, 51:11 (2017), 1453–1455 |
1
|
|
2015 |
| 3. |
A. N. Alekseev, D. M. Krasovitsky, S. I. Petrov, V. P. Chalyi, V. V. Mamaev, V. G. Sidorov, “Specific features of NH$_3$ and plasma-assisted MBE in the fabrication of III-N HEMT heterostructures”, Fizika i Tekhnika Poluprovodnikov, 49:1 (2015), 94–97 ; Semiconductors, 49:1 (2015), 92–94 |
4
|
|
2012 |
| 4. |
A. N. Alekseev, D. M. Krasovitsky, S. I. Petrov, V. P. Chalyi, “Deposition of GaN Layers with a lowered dislocation density by molecular-beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 46:11 (2012), 1460–1462 ; Semiconductors, 46:11 (2012), 1429–1431 |
2
|
| 5. |
M. R. Ainbund, A. N. Alekseev, O. V. Alymov, V. N. Zhmerik, L. V. Lapushkina, A. M. Mizerov, S. V. Ivanov, A. V. Pashuk, S. I. Petrov, “Solar-blind UV photocathodes based on AlGaN heterostructures with a 300- to 330-nm spectral sensitivity threshold”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:9 (2012), 88–95 ; Tech. Phys. Lett., 38:5 (2012), 439–442 |
35
|
|
| Organisations |
|
|
