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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
F. F. Komarov, S. B. Lastovsky, I. A. Romanov, I. N. Parkhomenko, L. A. Vlasukova, G. D. Ivlev, Y. Berencen, A. A. Tsivako, N. S. Koval'chuk, E. Wendler, “Te-hyperdoped silicon layers for visible-to-infrared photodiodes”, Zhurnal Tekhnicheskoi Fiziki, 91:12 (2021), 2026–2037 |
| 2. |
F. F. Komarov, I. A. Romanov, L. A. Vlasukova, I. N. Parkhomenko, A. A. Tsivako, N. S. Koval'chuk, “Resistive switching effect of the structure based on silicon nitride”, Zhurnal Tekhnicheskoi Fiziki, 91:1 (2021), 139–144 ; Tech. Phys., 66:1 (2021), 133–138 |
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| 3. |
F. F. Komarov, I. N. Parkhomenko, O. V. Milchanin, G. D. Ivlev, L. A. Vlasukova, Yu. Żuk, A. A. Tsivako, N. S. Koval'chuk, “Effect of pulsed laser annealing on optical properties of selenium-hyperdoped silicon”, Optics and Spectroscopy, 129:8 (2021), 1037–1047 ; Optics and Spectroscopy, 129:10 (2021), 1114–1124 |
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2018 |
| 4. |
D. V. Shuleiko, F. V. Kashaev, F. V. Potemkin, S. V. Zabotnov, A. V. Zoteev, D. E. Presnov, I. N. Parkhomenko, I. A. Romanov, “Structural anisotropy of amorphous silicon films modified by femtosecond laser pulses”, Optics and Spectroscopy, 124:6 (2018), 770–776 ; Optics and Spectroscopy, 124:6 (2018), 801–807 |
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| 5. |
D. O. Murzalinov, L. A. Vlasukova, I. N. Parkhomenko, F. F. Komarov, À. Ò. Akylbekov, A. V. Mudryi, , Sh. G. Giniyatova, À. Ê. Dauletbekova, “The photoluminescence of nitrogen-implanted silicon nitride films”, Bulletin of the L.N. Gumilyov Eurasian National University. Physics. Astronomy Series, 122:1 (2018), 68–73 |
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2015 |
| 6. |
F. F. Komarov, G. A. Ismailova, O. V. Milchanin, I. N. Parkhomenko, F. B. Zhusipbekova, G. Sh. Yar-Mukhamedova, “Effect of thermal processing on the structure and optical properties of crystalline silicon with GaSb nanocrystals formed with the aid of high-doze ion implantation”, Zhurnal Tekhnicheskoi Fiziki, 85:9 (2015), 91–96 ; Tech. Phys., 60:9 (2015), 1348–1352 |
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| 7. |
A. F. Komarov, F. F. Komarov, O. V. Milchanin, L. A. Vlasukova, I. N. Parkhomenko, V. V. Mikhailov, M. A. Mokhovikov, S. A. Miskevich, “Formation of InAs nanoclusters in silicon by high-dose ion implantation: Experimental data and simulation results”, Zhurnal Tekhnicheskoi Fiziki, 85:9 (2015), 77–85 ; Tech. Phys., 60:9 (2015), 1335–1342 |
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