|
|
|
Publications in Math-Net.Ru |
Citations |
|
2022 |
| 1. |
S. N. Nikolaev, V. S. Bagaev, M. A. Chernopitskii, I. I. Usmanov, E. E. Onishchenko, A. A. Deeva, V. S. Krivobok, “Low-temperature photoluminescence of WSe$_2$ monolayer obtained by gold-assisted exfoliation”, Fizika i Tekhnika Poluprovodnikov, 56:3 (2022), 335–339   |
1
|
|
2021 |
| 2. |
V. S. Krivobok, A. D. Kondorskiy, D. A. Pashkeev, E. A. Ekimov, A. D. Shabrin, D. A. Litvinov, L. N. Grigor'eva, S. A. Kolosov, M. A. Chernopitskii, A. V. Klekovkin, P. A. Forsh, “A hybrid mid-IR photodetector based on semiconductor quantum wells”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:8 (2021), 33–36 ; Tech. Phys. Lett., 47:5 (2021), 388–391 |
1
|
|
2020 |
| 3. |
S. N. Nikolaev, M. A. Chernopitsskii, V. S. Bagaev, V. S. Krivobok, “Anti-Stokes luminescence of bulk and thin-film $\beta$-InSe under infrared optical excitation”, Pis'ma v Zh. Èksper. Teoret. Fiz., 112:3 (2020), 160–164 ; JETP Letters, 112:3 (2020), 145–149   |
|
2019 |
| 4. |
V. S. Krivobok, D. A. Litvinov, S. N. Nikolaev, E. E. Onishchenko, D. A. Pashkeev, M. A. Chernopitskii, L. N. Grigor'eva, “Excitonic effects and impurity–defect emission in GaAs/AlGaAs structures used for the production of mid-IR photodetectors”, Fizika i Tekhnika Poluprovodnikov, 53:12 (2019), 1632–1640 ; Semiconductors, 53:12 (2019), 1608–1616 |
3
|
|
2016 |
| 5. |
V. S. Krivobok, I. A. Denisov, E. N. Mozhevitina, S. N. Nikolaev, E. E. Onishchenko, A. A. Pruchkina, A. A. Silina, N. A. Smirnova, M. A. Chernopitskii, N. I. Shmatov, “Impurity–defect emission from undoped Cd$_{1-x}$Zn$_{x}$Te single crystals near the fundamental absorption edge”, Fizika Tverdogo Tela, 58:5 (2016), 950–960 ; Phys. Solid State, 58:5 (2016), 981–991 |
2
|
|
| Organisations |
|
|
