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Publications in Math-Net.Ru |
Citations |
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1987 |
| 1. |
A. V. Chudinov, V. P. Chalyi, A. E. Svetlokuzev, A. V. Vasil'ev, A. L. Termartirosyan, D. Z. Garbuzov, “Photoluminescent Studies of InGaAsP/InP Heterostructures with Active Region of $40\div 1000$ ÅThickness”, Fizika i Tekhnika Poluprovodnikov, 21:7 (1987), 1217–1222  |
| 2. |
D. Z. Garbuzov, V. P. Chalyi, A. V. Chudinov, A. E. Svetlokuzev, A. V. Ovchinnikov, “Quantum-Dimensional Effects in Luminescence Spectra of Liquid-Phase InGaAsP/InP Heterostructures with Active Region of 230$-$60 ÅThickness”, Fizika i Tekhnika Poluprovodnikov, 21:3 (1987), 437–441 |
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1986 |
| 3. |
I. N. Arsentev., D. Z. Garbuzov, S. G. Konnikov, K. Yu. Pogrebickii, A. E. Svetlokuzev, N. N. Faleev, A. V. Chudinov, “X-Ray Photoemission Studies of Liquid-Phase InGaAsP Heterostructures with Transient-Layer Extent of ${\leqslant20}$ Å”, Fizika i Tekhnika Poluprovodnikov, 20:12 (1986), 2206–2211 |
| 4. |
S. G. Konnikov, V. A. Solov'ev, V. E. Umanskii, A. V. Chudinov, A. A. Khusainov, “Microcathodoluminescence of Double Heterostructures”, Fizika i Tekhnika Poluprovodnikov, 20:6 (1986), 1049–1054 |
| 5. |
N. Yu. Antonishkis, I. N. Arsent'ev, D. Z. Garbuzov, V. P. Evtikhiev, V. V. Krasovskii, A. E. Svetlokuzev, A. V. Chudinov, “Luminescence Efficiency and Boundary-Recombination Rate in Heteroslructures in Al$-$Ga$-$As and In$-$Ga$-$As$-$P”, Fizika i Tekhnika Poluprovodnikov, 20:4 (1986), 708–712 |
| 6. |
Zh. I. Alferov, D. Z. Garbuzov, K. Yu. Kizhaev, A. B. Nivin, S. A. Nikishin, A. V. Ovchinnikov, Z. N. Sokolova, I. S. Tarasov, A. V. Chudinov, “Low-threshold in $In\,Ga\,As\,P/In\,P$ lasers of divided limitation with $\lambda=1.3$-mu-m and $\lambda =1.55$-mu-m
($I_{\text{threshold}}=600-700\,\text{A/cm}^{2}$)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:4 (1986), 210–215 |
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1985 |
| 7. |
I. S. Tarasov, D. Z. Garbuzov, V. P. Evtikhiev, A. V. Ovchinnikov, Z. N. Sokolova, A. V. Chudinov, “Special Features of Temperature Dependence of Thresholds in
InGaAsP/InP DH Lasers (${\lambda=1.3}\, \mu m$) with Separate Limitation
and Thin Active Region”, Fizika i Tekhnika Poluprovodnikov, 19:8 (1985), 1496–1498 |
| 8. |
V. P. Evtikhiev, D. Z. Garbuzov, Z. N. Sokolova, I. S. Tarasov, V. B. Khalfin, V. P. Chalyi, A. V. Chudinov, “Special Features of Threshold Characteristics of InGaAsP/InP DH
Lasers (${\lambda=1.3}\,\mu m$) with Separate
Limitation and Superthin Active
Regions”, Fizika i Tekhnika Poluprovodnikov, 19:8 (1985), 1420–1423 |
| 9. |
Z. I. Alferov, D. Z. Garbuzov, I. N. Arsent'ev, B. Ya. Ber, L. S. Vavilova, V. V. Krasovskii, A. V. Chudinov, “Auger Profiles of Composition and Luminescent Studies
of Liquid-Phase InGaAsP Heterostructures with Active Regions ${(1.5\div5)\cdot10^{-6}}$ cm”, Fizika i Tekhnika Poluprovodnikov, 19:6 (1985), 1108–1114 |
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1984 |
| 10. |
Z. I. Alferov, I. N. Arsent'ev, D. Z. Garbuzov, V. P. Evtikhiev, O. V. Sulima, V. P. Chalyi, A. V. Chudinov, “Инжекционные РО InGaAsP/InP ДГС лазеры с порогом
$300\,\text{А/см}^{2}$ (четырехсколотые образцы,
${\lambda=1.25}$ мкм, ${T=300}$ K)”, Fizika i Tekhnika Poluprovodnikov, 18:11 (1984), 2057–2060 |
| 11. |
D. Z. Garbuzov, I. N. Arsent'ev, V. P. Chalyi, A. V. Chudinov, V. P. Evtikhiev, V. B. Khalfin, “Спонтанные и когерентные излучательные переходы в InGaAsP/InP ДГС
с тонкой активной областью
(${d_{\text{а}}=2\cdot10^{-5}\div2\cdot10^{-6}}$ см), полученные методом
жидкостной эпитаксии”, Fizika i Tekhnika Poluprovodnikov, 18:11 (1984), 2041–2045 |
| 12. |
D. Z. Garbuzov, A. V. Chudinov, V. V. Agaev, V. P. Chalyi, V. P. Evtikhiev, “Luminescent and Threshold Characteristics of InGaAsP/InP Double Heterostructures (${0.94\mu m<\lambda<1.51 \mu m}$) under
Optical Excitation”, Fizika i Tekhnika Poluprovodnikov, 18:1 (1984), 102–108 |
| 13. |
D. Z. Garbuzov, V. P. Chalyi, A. V. Chudinov, N. Yu. Daviduk, V. V. Agaev, “LASER TRANSFORMERS OF SHORT-WAVE EMISSION INTO THE INFRARED BASED ON
INGAASP/INP DHS (DOUBLE HETEROSTRUCTURE) LASER
(LAMBDA=1.0-DIVIDED-BY-1.35MKM,ETA-D=20-PERCENT,T=300-K)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:16 (1984), 1010–1016 |
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1983 |
| 14. |
D. Z. Garbuzov, V. G. Agafonov, V. V. Agaev, V. M. Lantratov, A. V. Chudinov, “Эффективный перенос возбуждения из эмиттера в активную область при
фотолюминесценции InGaAsP/InP ДГС”, Fizika i Tekhnika Poluprovodnikov, 17:12 (1983), 2168–2172 |
| 15. |
A. V. Chudinov, V. P. Chalyi, D. Z. Garbuzov, I. N. Arsent'ev, V. P. Evtikhiev, “Фотолюминесцентные исследования перераспределения неравновесных
носителей заряда в InGaAsP/InP с двумя активными областями”, Fizika i Tekhnika Poluprovodnikov, 17:4 (1983), 714–717 |
| 16. |
V. P. Chalyi, D. Z. Garbuzov, A. V. Chudinov, V. V. Agaev, “Исследование эффекта насыщения интенсивности люминесценции
в ДГ-InGaAsP/InP-структурах (${\lambda=1.3}$ мкм) при высоких
уровнях возбуждения”, Fizika i Tekhnika Poluprovodnikov, 17:3 (1983), 464–468 |
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