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Publications in Math-Net.Ru |
Citations |
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2011 |
| 1. |
M. D. Sharkov, K. Yu. Pogrebickii, M. E. Boiko, “New technique for EXAFS data processing and its application”, Zhurnal Tekhnicheskoi Fiziki, 81:9 (2011), 134–139   ; Tech. Phys., 56:9 (2011), 1353–1358 |
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1992 |
| 2. |
N. A. Bert, K. Yu. Pogrebickii, I. P. Soshnikov, Y. N. Yurev, “PRINCIPLES OF GAAS(001) SPUTTERING BY AR+ IONS WITH 1-9 KEV ENERGY”, Zhurnal Tekhnicheskoi Fiziki, 62:4 (1992), 162–170 |
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1990 |
| 3. |
K. Yu. Kizhaev, V. I. Kuchinskii, S. A. Nikishin, K. Yu. Pogrebickii, V. B. Smirnitskiĭ, N. N. Faleev, “CONTROL OF THE LENGTH OF TRANSITION LAYERS UNDER LIQUID-PHASE
HETEROEPITAXY (LPHE) IN THE INGAASP/INP SYSTEM”, Zhurnal Tekhnicheskoi Fiziki, 60:3 (1990), 123–128 |
| 4. |
V. N. Bessolov, S. G. Konnikov, M. V. Lebedev, K. Yu. Pogrebickii, B. V. Tsarenkov, “EXPERIMENTAL JUSTIFICATION OF A RELAXATION LIQUID EPITAXY MODEL WITH
MASS-TRANSFER INVERSION DESIGNED FOR THE FORMATION OF SUPERFINE A3B5
LAYERS”, Zhurnal Tekhnicheskoi Fiziki, 60:1 (1990), 165–169 |
| 5. |
V. V. Vorob'eva, A. M. Kreschuk, T. L. Makarova, S. V. Novikov, K. Yu. Pogrebickii, I. G. Savelev, “Изучение переходной области между эпитаксиальными слоями
InP и In$_{0.53}$Ga$_{0.47}$As в гетероструктурах с 2МЭГ”, Fizika i Tekhnika Poluprovodnikov, 24:6 (1990), 1026–1030 |
| 6. |
N. A. Bert, V. V. Vorob'eva, M. V. Vorontsova, A. M. Kreschuk, S. V. Novikov, K. Yu. Pogrebickii, I. G. Savelev, D. Zh. Saifidinov, I. P. Soshnikov, A. Ya. Shik, “Влияние толщины верхнего узкозонного слоя на концентрацию двумерных
электронов в инвертированных гетероструктурах InP/In$_{0.53}$Ga$_{0.47}$As”, Fizika i Tekhnika Poluprovodnikov, 24:4 (1990), 653–659 |
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1988 |
| 7. |
N. A. Bert, S. G. Konnikov, A. V. Korolkov, K. Yu. Pogrebickii, “CHANGE OF GALLIUM-ARSENIDE COMPOSITION IN THE VICINITY OF SURFACE UNDER
AR+-ION BOMBARDMENT”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:8 (1988), 673–676 |
| 8. |
Z. I. Alferov, V. M. Andreev, S. G. Konnikov, V. R. Larionov, K. Yu. Pogrebickii, N. N. Faleev, V. P. Khvostikov, “LIQUID-PHASE ALGAAS-STRUCTURES WITH QUANTUM-DIMENTIONAL LAYERS OF THE
APPROXIMATELY-20A WIDTH”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:2 (1988), 171–176 |
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1987 |
| 9. |
S. G. Konnikov, O. V. Kovalenkov, K. Yu. Pogrebickii, M. A. Sinicin, N. N. Faleev, L. I. Flaks, B. S. Yavich, “Roentgen-Diffractional and Roentgen-Photoelectronic Measurements of the Parameters of Periodic GaAs–AlGaAs Structures
Produced by MOC Hydride Method”, Fizika i Tekhnika Poluprovodnikov, 21:10 (1987), 1745–1749 |
| 10. |
K. Yu. Kizhaev, S. G. Konnikov, S. A. Nikishin, K. Yu. Pogrebickii, V. P. Ulin, N. N. Faleev, L. I. Flaks, “Widening transition layers in heterostructures, based on $In\,Ga\,As\,P$ solid-solutions, caused by elastic tensions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:3 (1987), 132–136 |
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1986 |
| 11. |
I. N. Arsentev., D. Z. Garbuzov, S. G. Konnikov, K. Yu. Pogrebickii, A. E. Svetlokuzev, N. N. Faleev, A. V. Chudinov, “X-Ray Photoemission Studies of Liquid-Phase InGaAsP Heterostructures with Transient-Layer Extent of ${\leqslant20}$ Å”, Fizika i Tekhnika Poluprovodnikov, 20:12 (1986), 2206–2211 |
| 12. |
Zh. I. Alferov, V. M. Andreev, A. A. Vodnev, S. G. Konnikov, V. R. Larionov, K. Yu. Pogrebickii, V. D. Rumancev, V. P. Khvostikov, “$Al\,Ga\,As$-heterostructures with quantum-dimensional layers, obtained by low-temperature liquid-phase epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:18 (1986), 1089–1093 |
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| 13. |
V. M. Andreev, O. O. Ivent'eva, S. G. Konnikov, K. Yu. Pogrebickii, E. Puron, O. V. Sulima, N. N. Faleev, “Low-temperature liquid-phase epitaxy of $Al\,Ga\,As$-heterostructures with submicron ($10^{-1}-10^{-2}$-mu-m) layers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:9 (1986), 533–537 |
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