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Publications in Math-Net.Ru |
Citations |
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2020 |
| 1. |
V. V. Romanov, V. A. Kozhevnikov, V. A. Mashkov, N. T. Bagraev, “Description of the magnetization oscillations of a silicon nanostructure in weak fields at room temperature. the Lifshitz–Kosevich formula with variable effective carrier mass”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1331–1335 ; Semiconductors, 54:12 (2020), 1593–1597 |
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2018 |
| 2. |
N. T. Bagraev, L. E. Klyachkin, V. S. Khromov, A. M. Malyarenko, V. A. Mashkov, T. V. Matveev, V. V. Romanov, N. I. Rul, K. B. Taranets, “High temperature quantum kinetic effects in silicon nanosandwiches”, Fizika i Tekhnika Poluprovodnikov, 52:4 (2018), 473 ; Semiconductors, 52:4 (2018), 478–484 |
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2016 |
| 3. |
N. T. Bagraev, V. Yu. Grigoryev, L. E. Klyachkin, A. M. Malyarenko, V. A. Mashkov, V. V. Romanov, “Room temperature de Haas–van Alphen effect in silicon nanosandwiches”, Fizika i Tekhnika Poluprovodnikov, 50:8 (2016), 1047–1054 ; Semiconductors, 50:8 (2016), 1025–1033 |
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2015 |
| 4. |
N. T. Bagraev, E. Yu. Danilovskii, D. S. Gets, E. N. Kalabukhova, L. E. Klyachkin, A. A. Koudryavtsev, A. M. Malyarenko, V. A. Mashkov, D. V. Savchenko, B. D. Shanina, “Silicon vacancy-related centers in non-irradiated 6H-SiC nanostructure”, Fizika i Tekhnika Poluprovodnikov, 49:5 (2015), 663–671 ; Semiconductors, 49:5 (2015), 649–657 |
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2014 |
| 5. |
N. T. Bagraev, R. V. Kuz'min, A. S. Gurin, L. E. Klyachkin, A. M. Malyarenko, V. A. Mashkov, “Optically detected cyclotron resonance in heavily boron-doped silicon nanostructures on $n$-Si (100)”, Fizika i Tekhnika Poluprovodnikov, 48:12 (2014), 1646–1653 ; Semiconductors, 48:12 (2014), 1605–1612 |
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| 6. |
N. T. Bagraev, D. S. Gets, E. N. Kalabukhova, L. E. Klyachkin, A. M. Malyarenko, V. A. Mashkov, D. V. Savchenko, B. D. Shanina, “Electrically-detected electron paramagnetic resonance of point centers in 6H-SiC nanostructures”, Fizika i Tekhnika Poluprovodnikov, 48:11 (2014), 1503–1516 ; Semiconductors, 48:11 (2014), 1467–1480 |
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2013 |
| 7. |
N. T. Bagraev, L. E. Klyachkin, R. V. Kuz'min, A. M. Malyarenko, V. A. Mashkov, “Features of the electroluminescence spectra of quantum-confined silicon $p^+$–$n$ heterojunctions in the infrared spectral region”, Fizika i Tekhnika Poluprovodnikov, 47:11 (2013), 1530–1535 ; Semiconductors, 47:11 (2013), 1517–1522 |
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2012 |
| 8. |
N. T. Bagraev, L. E. Klyachkin, R. V. Kuz'min, A. M. Malyarenko, V. A. Mashkov, “Infrared luminescence from silicon nanostructures heavily doped with boron”, Fizika i Tekhnika Poluprovodnikov, 46:3 (2012), 289–303 ; Semiconductors, 46:3 (2012), 275–288 |
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| 9. |
N. T. Bagraev, È. Yu. Danilovskii, L. E. Klyachkin, A. M. Malyarenko, V. A. Mashkov, “Spin interference of holes in silicon nanosandwiches”, Fizika i Tekhnika Poluprovodnikov, 46:1 (2012), 77–89 ; Semiconductors, 46:1 (2012), 75–86 |
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1992 |
| 10. |
V. A. Mashkov, A. L. Diikov, “On a new mechanism of inhomogeneous broadening in the optical spectra of deep defects in dielectric glasses”, Fizika Tverdogo Tela, 34:11 (1992), 3313–3318 |
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1990 |
| 11. |
A. L. Diikov, V. A. Mashkov, “Influence of the lattice frequency change on the optical properties of non-bridging oxygen centers in glassy $\mathrm{SiO}_{2}$”, Fizika Tverdogo Tela, 32:12 (1990), 3654–3658 |
| 12. |
A. L. Diikov, V. A. Mashkov, “Spectral manifestations of quadratic vibronic interaction on deep defects in glasses”, Fizika Tverdogo Tela, 32:4 (1990), 1216–1219 |
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1989 |
| 13. |
I. G. Atabaev, N. T. Bagraev, V. A. Mashkov, M. S. Saidov, U. Sirozhov, A. Yusupov, “Реакции центров золота с отрицательной корреляционной энергией
в твердых растворах Si$-$Ge”, Fizika i Tekhnika Poluprovodnikov, 23:3 (1989), 525–531 |
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1988 |
| 14. |
N. T. Bagraev, A. A. Lebedev, V. A. Mashkov, I. S. Polovtsev, “Self-compensation of iron centers in silicon under optical pumping”, Fizika Tverdogo Tela, 30:7 (1988), 2076–2084 |
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1987 |
| 15. |
N. T. Bagraev, A. L. Diikov, L. E. Klyachkin, V. A. Mashkov, V. L. Sukhanov, “Study of the effect of oxides and polycrystal layers on the carrier life-span in monocrystal silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:17 (1987), 1025–1029 |
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1986 |
| 16. |
N. T. Bagraev, L. S. Vlasenko, V. A. Mashkov, “Study of dislocation dangling bond annealing in silicon by optical polarization of the nuclear moment technique”, Fizika Tverdogo Tela, 28:4 (1986), 1190–1193 |
| 17. |
N. T. Bagraev, L. S. Vlasenko, V. A. Mashkov, V. A. Khramtsov, “Optical polarization of nuclear moments in silicon with one-dimensional defects”, Fizika Tverdogo Tela, 28:2 (1986), 634–637 |
| 18. |
I. G. Atabaev, N. T. Bagraev, V. A. Mashkov, M. S. Saidov, A. Yusupov, “Reactions of Gold Centers under Optical Pumping of Silicon–Germanium Solid Solutions”, Fizika i Tekhnika Poluprovodnikov, 20:4 (1986), 745–747 |
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1985 |
| 19. |
N. T. Bagraev, V. A. Mashkov, R. P. Seisyan, V. L. Sukhanov, N. M. Shmidt, “FORMATION OF HETEROGENEOUS COMPENSATION DOMAIN IN THE PROCESS OF
OBTAINING PLANAR SILICON P-N-JUNCTIONS”, Zhurnal Tekhnicheskoi Fiziki, 55:10 (1985), 2064–2066 |
| 20. |
N. T. Bagraev, V. A. Mashkov, K. V. Mukovnikov, “Semiconductor–Dielectric Transition in Lightly Doped Thermally Treated Semiconductors”, Fizika i Tekhnika Poluprovodnikov, 19:4 (1985), 611–615 |
| 21. |
N. T. Bagraev, V. A. Mashkov, D. S. Poloskin, “Spin-dependent negative photo-conductivity in silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:9 (1985), 568–573 |
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1972 |
| 22. |
S. S. Kasymova, V. A. Mashkov, D. M. Yudin, “Energetic and structural models of microdefects in germanate glasses”, Dokl. Akad. Nauk SSSR, 207:6 (1972), 1318–1321 |
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