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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
L. B. Vedmid', O. M. Fedorova, V. B. Balakireva, V. A. Vorotnikov, V. F. Balakirev, “Structure and electrical conductivity of the perovskites Pr$_{1-x}$Sr$_{x}$MnO$_{3}$ ($x$ = 0; 0.15; 0.25)”, Fizika Tverdogo Tela, 63:4 (2021), 465–470   ; Phys. Solid State, 63:4 (2021), 660–665 |
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1991 |
| 2. |
D. A. Vinokurov, V. M. Lantratov, M. A. Sinicin, V. P. Ulin, N. N. Faleev, O. M. Fedorova, Ya. L. Shaiovich, B. S. Yavich, “Свойства и особенности кристаллизации эпитаксиальных слоев GaAs,
выращенных на подложках Si(100) методом двухстадийного осаждения в МОС
гидридном процессе”, Fizika i Tekhnika Poluprovodnikov, 25:6 (1991), 1022–1029 |
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1989 |
| 3. |
I. A. Kuzmin, A. G. Mashevskii, D. R. Stroganov, O. M. Fedorova, B. S. Yavich, “Получение МОС гидридным методом при пониженном давлении
и фотолюминесцентные исследования GaAs/AlGaAs квантово-размерных структур”, Fizika i Tekhnika Poluprovodnikov, 23:8 (1989), 1420–1425 |
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1988 |
| 4. |
A. G. Mashevskii, M. A. Sinicin, D. R. Stroganov, O. M. Fedorova, B. S. Yavich, “FLUCTUATIONS OF A WIDTH OF QUANTUM WELLS AND LOW-TEMPERATURE
PHOTOLUMINESCENCE OF GAAS/ALGAAS QUANTUM-DIMENSIONAL STRUCTURES,
OBTAINED BY THE MOS-HYDRIDE METHOD”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:13 (1988), 1217–1220 |
| 5. |
O. V. Kovalenkov, A. G. Mashevskii, M. A. Sinicin, O. M. Fedorova, B. S. Yavich, “STUDY OF GAAS-ALGAAS QUANTUM-DIMENSIONAL STRUCTURES, OBTAINED BY THE
MOS-HYDRIDE METHOD”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:3 (1988), 222–226 |
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1987 |
| 6. |
A. G. Mashevskii, M. A. Sinicin, O. M. Fedorova, B. S. Yavich, “Effect of Doping Level on Electrophysical Properties of Al$_{0.3}$Ga$_{0.7}$As : Si Solid
Solution”, Fizika i Tekhnika Poluprovodnikov, 21:4 (1987), 754–756 |
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1986 |
| 7. |
V. A. Malinov, A. D. Starikov, V. K. Tibilov, O. M. Fedorova, “FAST-RESPONSE HIGH-POWER OPTOELECTRONIC SWITCHING”, Zhurnal Tekhnicheskoi Fiziki, 56:3 (1986), 577–579 |
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| 8. |
A. D. Zorin, E. N. Karataev, A. G. Mashevskii, M. A. Sinicin, O. M. Fedorova, “Study of the Nature of Acceptor Impurities in Pure GaAs Epitaxial Layers Produced by the MOC Hydride Method”, Fizika i Tekhnika Poluprovodnikov, 20:12 (1986), 2163–2168 |
| 9. |
A. G. Mashevskii, M. A. Sinicin, O. M. Fedorova, ByuSyuYavich, “Deep Donor Level of Si in Al$_{x}$Ga$_{1-x}$As Solid Solutions Produced from a Gas Phase”, Fizika i Tekhnika Poluprovodnikov, 20:10 (1986), 1919–1921 |
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1985 |
| 10. |
V. M. Andreev, A. M. Allakhverdiev, V. D. Rumancev, O. M. Fedorova, S. S. Shamukhamedov, “Low Rate
of Surface Recombination (${S =10^{4}}\,cm/s$) in Epitaxial $n$-Туре
GaAs”, Fizika i Tekhnika Poluprovodnikov, 19:10 (1985), 1826–1829 |
| 11. |
A. G. Mashevskii, M. A. Sinicin, O. M. Fedorova, B. S. Yavich, “Investigation of multi-layered $Ga\,As-Al\,Ga\,As$ structures on inclined cross-sections, made by the chemical etching”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:1 (1985), 21–24 |
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1984 |
| 12. |
V. M. Andreev, N. M. Saradzhishvili, O. M. Fedorova, Sh. Sh. Shamukhamedov, “THIN-FILM ALGAAS HETEROPHOTOELEMENTS WITH A REMOVED GAAS BASE”, Zhurnal Tekhnicheskoi Fiziki, 54:6 (1984), 1215–1218 |
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1983 |
| 13. |
V. M. Andreev, V. R. Larionov, V. D. Rumancev, O. M. Fedorova, S. S. Shamukhamedov, “Высокоэффективные $p$AlGaAs${-}p$GaAs${-}n$GaAs
солнечные фотоэлементы с КПД
19% (AM 0)
и 24% (AM 1.5)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:20 (1983), 1251–1254 |
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