|
|
|
Publications in Math-Net.Ru |
Citations |
|
2019 |
| 1. |
E. V. Ostroumova, A. N. Aleshin, “Specific features of current–voltage characteristics of field-effect transistors with active layers based on composite films of semiconductor polymers with nanoparticles of inorganic perovskites”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:23 (2019), 47–50   ; Tech. Phys. Lett., 45:12 (2019), 1212–1215 |
|
2015 |
| 2. |
S. V. Belov, E. V. Ostroumova, E. A. Rogacheva, “Erratum to: “Dynamics of induced base layer formation in tunnel MIS-transistors under strong electric fields””, Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:8 (2015), 409 ; Tech. Phys. Lett., 41:4 (2015), 409 |
| 3. |
S. V. Belov, E. V. Ostroumova, E. A. Rogacheva, “Dynamics of induced base layer formation in tunnel MIS-transistors under strong electric fields”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:3 (2015), 103–110 ; Tech. Phys. Lett., 41:2 (2015), 153–156 |
|
1991 |
| 4. |
I. V. Grekhov, E. V. Ostroumova, A. A. Rogachev, A. F. Shulekin, “SILICON AUGER-TRANSISTOR WITH TUNNEL MOS-EMITTER”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:13 (1991), 44–48 |
|
1986 |
| 5. |
I. V. Grekhov, E. V. Ostroumova, “Injection capability of the MOS-emitter with tunnel-thin oxide layers during high-current densities”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:19 (1986), 1209–1212 |
|
