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Publications in Math-Net.Ru |
Citations |
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2013 |
| 1. |
K. D. Glinchuk, A. P. Medvid’, A. M. Mychko, Yu. N. Naseka, A. V. Prokhorovich, O. N. Stril'chuk, “Influence of irradiation with $\gamma$-ray photons on the photoluminescence of Cd$_{0.9}$Zn$_{0.1}$ crystals preliminarily subjected to the intense radiation of a neodymium laser”, Fizika i Tekhnika Poluprovodnikov, 47:4 (2013), 435–441   ; Semiconductors, 47:4 (2013), 457–463 |
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1991 |
| 2. |
E. V. Vinnik, K. D. Glinchuk, V. I. Guroshev, A. V. Prokhorovich, “Влияние облучения быстрыми нейтронами на люминесценцию арсенида
галлия”, Fizika i Tekhnika Poluprovodnikov, 25:1 (1991), 82–87 |
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1990 |
| 3. |
K. D. Glinchuk, N. M. Litovchenko, V. Yu. Ptitsyn, “Некоторые свойства индуцированных кислородом рекомбинационных центров
в термообработанном кремнии”, Fizika i Tekhnika Poluprovodnikov, 24:9 (1990), 1685–1689 |
| 4. |
E. V. Vinnik, K. D. Glinchuk, V. I. Guroshev, A. V. Prokhorovich, “Понижение термической стабильности
комплексов $V_{\text{As}}$Zn$_{\text{Ga}}$ в GaAs при нейтронном облучении”, Fizika i Tekhnika Poluprovodnikov, 24:8 (1990), 1363–1366 |
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1989 |
| 5. |
K. D. Glinchuk, N. S. Zayats, A. V. Prokhorovich, “Влияние облучения протонами на люминесценцию арсенида галлия”, Fizika i Tekhnika Poluprovodnikov, 23:4 (1989), 657–661 |
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1987 |
| 6. |
K. D. Glinchuk, V. I. Guroshev, A. V. Prokhorovich, “${h\nu_{m}\simeq 1.2}$ eV Luminescence Band in $p$-Type GaAs Stimulated by Radiationally-Thermal Effect”, Fizika i Tekhnika Poluprovodnikov, 21:9 (1987), 1659–1663 |
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1986 |
| 7. |
K. D. Glinchuk, V. I. Guroshev, A. V. Prokhorovich, “Effect of Fast-Electron Irradiation on the Luminescence of $p$-Type GaAs (Si) Heavily Doped and Compensated Layers”, Fizika i Tekhnika Poluprovodnikov, 20:10 (1986), 1874–1877 |
| 8. |
K. D. Glinchuk, V. I. Guroshev, A. V. Prokhorovich, “Interaction of Radiation-Induced Defects with Chromium Atoms in Gallium Arsenide”, Fizika i Tekhnika Poluprovodnikov, 20:3 (1986), 567–569 |
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1985 |
| 9. |
K. D. Glinchuk, V. I. Guroshev, A. V. Prokhorovich, “Variation of Maximum Position and Half width of Luminescence Band due to Radiative
Recombination in $V_{\text{Ga}}$Te$_{\text{As}}$ Complexes under Electron Irradiation
of GaAs”, Fizika i Tekhnika Poluprovodnikov, 19:7 (1985), 1326–1328 |
| 10. |
K. D. Glinchuk, V. I. Guroshev, A. V. Prokhorovich, “Increase of Concentration of Luminescence-Quenching
Centers under the Annealing of Electron-Irradiated Gallium-Arsenide Crystals”, Fizika i Tekhnika Poluprovodnikov, 19:6 (1985), 1163–1164 |
| 11. |
K. D. Glinchuk, N. M. Litovchenko, Z. A. Salnik, S. I. Skryl, A. L. Troshin, “Effect of Carbon on Minority-Carrier Lifetimes in Thermally Treated Oxygen-Containing Silicon”, Fizika i Tekhnika Poluprovodnikov, 19:4 (1985), 770–771 |
| 12. |
K. D. Glinchuk, N. M. Litovchenko, Z. A. Salnik, S. I. Skryl, “On the Effect of Thermal Treatment on Lifetime of Minority Charge Carriers in Oxygen-Containing Silicon”, Fizika i Tekhnika Poluprovodnikov, 19:2 (1985), 341–343 |
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1984 |
| 13. |
K. D. Glinchuk, N. S. Zayats, A. V. Prokhorovich, “Decrease of Thermal Stability of $V_{\text{As}}\text{Zn}_{\text{Ga}}$ in GaAs under Irradiation”, Fizika i Tekhnika Poluprovodnikov, 18:4 (1984), 736–739 |
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1983 |
| 14. |
K. D. Glinchuk, N. S. Zayats, A. V. Prokhorovich, “Изменение внутренней квантовой эффективности излучения,
обусловленного глубокими центрами люминесценции, при отжиге облученных
электронами кристаллов GaAs”, Fizika i Tekhnika Poluprovodnikov, 17:4 (1983), 751–753 |
| 15. |
K. D. Glinchuk, N. S. Zayats, A. V. Prokhorovich, “Изменение рекомбинационных свойств глубоких центров люминесценции при
отжиге облученных кристаллов GaAs”, Fizika i Tekhnika Poluprovodnikov, 17:1 (1983), 164–166 |
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