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Publications in Math-Net.Ru |
Citations |
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2016 |
| 1. |
L. A. Kosyachenko, V. Ya. Lytvynenko, E. L. Maslyanchuk, “Quantitative analysis of optical and recombination losses in Cu(In,Ga)Se$_{2}$ thin-film solar cells”, Fizika i Tekhnika Poluprovodnikov, 50:4 (2016), 515–524   ; Semiconductors, 50:4 (2016), 508–516 |
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2013 |
| 2. |
L. A. Kosyachenko, N. S. Yurtsenyuk, I. M. Rarenko, V. M. Skljarchuk, O. F. Sklyarchuk, Z. I. Zakharuk, E. V. Grushko, “Charge transport mechanisms in Schottky diodes based on low-resistance CdTe:Mn”, Fizika i Tekhnika Poluprovodnikov, 47:7 (2013), 907–915 ; Semiconductors, 47:7 (2013), 916–924 |
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2012 |
| 3. |
L. A. Kosyachenko, E. V. Grushko, T. I. Mikityuk, “Absorptivity of semiconductors used in the production of solar cell panels”, Fizika i Tekhnika Poluprovodnikov, 46:4 (2012), 482–486 ; Semiconductors, 46:4 (2012), 466–470 |
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| 4. |
L. A. Kosyachenko, V. M. Skljarchuk, S. V. Mel'nichuk, O. L. Maslyanchuk, E. V. Grushko, O. V. Sklyarchuk, “Effect of the concentration of uncompensated impurities on the properties of CdTe-based X- and $\gamma$-ray detectors”, Fizika i Tekhnika Poluprovodnikov, 46:3 (2012), 389–395 ; Semiconductors, 46:3 (2012), 374–381 |
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1988 |
| 5. |
I. S. Kabanova, L. A. Kosyachenko, V. P. Makhniy, “Нахождение закона дисперсии в запрещенной зоне полупроводника из
измерений туннельного обратного тока в диоде Шоттки”, Fizika i Tekhnika Poluprovodnikov, 22:10 (1988), 1852–1855 |
| 6. |
N. V. Gorbenko, L. A. Kosyachenko, V. P. Makhniy, M. K. Sheĭnkman, “Механизм прохождения прямого тока в электролюминесцентных диодах
Au$-$ZnS”, Fizika i Tekhnika Poluprovodnikov, 22:9 (1988), 1651–1656 |
| 7. |
O. P. Verbitskii, L. A. Kosyachenko, V. P. Makhniy, V. D. Ryzhikov, “PROPERTIES OF THE SCINTILLATOR-PHOTODIODE SYSTEM BASED ON THE SELENIDE
ZINC TELLURIDE STRUCTURE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:8 (1988), 702–705 |
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1987 |
| 8. |
I. S. Kabanova, L. A. Kosyachenko, V. P. Makhniy, “Tunneling in Gallium-Phosphide Schottky Diodes”, Fizika i Tekhnika Poluprovodnikov, 21:11 (1987), 2087–2090 |
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1986 |
| 9. |
N. V. Gorbenko, L. A. Kosyachenko, V. P. Makhniy, M. K. Sheĭnkman, “Radiative Recombination on Donor-Acceptor Pairs in the Space-Charge Region of Au-ZnS Diodes”, Fizika i Tekhnika Poluprovodnikov, 20:4 (1986), 619–624 |
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1985 |
| 10. |
L. A. Kosyachenko, E. F. Kukhto, V. M. Skljarchuk, “Hot luminescence of a silicon bipolar-transistor”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:23 (1985), 1437–1440 |
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1984 |
| 11. |
L. A. Kosyachenko, E. F. Kukhto, V. M. Skljarchuk, “RADIATION OF LIGHT BY METAL DURING DIRECT DISPLACEMENT OF A SCHOTTKY
DIODE”, Zhurnal Tekhnicheskoi Fiziki, 54:6 (1984), 1185–1186 |
| 12. |
L. A. Kosyachenko, V. P. Makhniy, “Влияние закона дисперсии на туннелирование носителей в CdTe-диодах”, Fizika i Tekhnika Poluprovodnikov, 18:7 (1984), 1285–1287 |
| 13. |
L. A. Kosyachenko, E. F. Kukhto, V. M. Skljarchuk, “Mechanism of Electroluminescence of Back-Biased Silicon $p{-}n$ Junction”, Fizika i Tekhnika Poluprovodnikov, 18:3 (1984), 426–430 |
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1983 |
| 14. |
L. A. Kosyachenko, E. F. Kukhto, V. M. Sklyarchuk, “Влияние одноосной деформации на свойства карбид-кремниевых диодов
Шоттки”, Fizika i Tekhnika Poluprovodnikov, 17:11 (1983), 1935–1937 |
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