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Publications in Math-Net.Ru |
Citations |
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2019 |
| 1. |
V. P. Makhniy, N. D. Vakhnyak, O. V. Kinzerska, Yu. P. Piryatinskii, “Luminescence of (ZnSe:Al):Yb сrystals at 4.2 K”, Fizika i Tekhnika Poluprovodnikov, 53:3 (2019), 329–331   ; Semiconductors, 53:3 (2019), 310–312 |
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2014 |
| 2. |
V. P. Makhniy, I. I. German, O. A. Parfenyuk, “Hall effect in CdTe crystals doped with Sn from the vapor phase”, Fizika i Tekhnika Poluprovodnikov, 48:11 (2014), 1467–1468 ; Semiconductors, 48:11 (2014), 1432–1433 |
| 3. |
V. P. Makhniy, A. M. Slyotov, E. V. Stez, “Nature of the blue emission band in zinc selenide containing sulfur isovalent impurity”, Fizika i Tekhnika Poluprovodnikov, 48:9 (2014), 1192–1193 ; Semiconductors, 48:9 (2014), 1161–1162 |
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2012 |
| 4. |
V. P. Makhniy, O. V. Kinzerska, “Determination of the ionization energy of vanadium levels in zinc selenide”, Fizika i Tekhnika Poluprovodnikov, 46:2 (2012), 150–151 ; Semiconductors, 46:2 (2012), 141–142 |
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2011 |
| 5. |
V. P. Makhniy, V. V. Mel'nik, I. G. Orletskii, “UV detector with internal gain based on SnO$_2$–ZnSe heterostructure”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:8 (2011), 21–25 ; Tech. Phys. Lett., 37:4 (2011), 354–355 |
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1992 |
| 6. |
V. P. Makhniy, V. V. Mel'nik, B. M. Sobishchanskiy, “Optoelectronic properties of indium-doped zinc selenide”, Fizika i Tekhnika Poluprovodnikov, 26:6 (1992), 1140–1141 |
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1991 |
| 7. |
V. E. Baranyuk, V. P. Makhniy, “Электрические и фотоэлектрические свойства гетеропереходов
сульфид$-$теллурид кадмия”, Fizika i Tekhnika Poluprovodnikov, 25:2 (1991), 217–221 |
| 8. |
V. P. Makhniy, “SEMICONDUCTING EMITTER WITH HIGH-TEMPERATURE STABILITY”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:3 (1991), 17–21 |
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1990 |
| 9. |
V. P. Makhniy, A. I. Malik, V. V. Melnik, “SOLAR-BLIND PHOTODIODES BASED ON ITO-ZNS HETEROSTRUCTURE”, Zhurnal Tekhnicheskoi Fiziki, 60:9 (1990), 146–147 |
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1988 |
| 10. |
I. S. Kabanova, L. A. Kosyachenko, V. P. Makhniy, “Нахождение закона дисперсии в запрещенной зоне полупроводника из
измерений туннельного обратного тока в диоде Шоттки”, Fizika i Tekhnika Poluprovodnikov, 22:10 (1988), 1852–1855 |
| 11. |
N. V. Gorbenko, L. A. Kosyachenko, V. P. Makhniy, M. K. Sheĭnkman, “Механизм прохождения прямого тока в электролюминесцентных диодах
Au$-$ZnS”, Fizika i Tekhnika Poluprovodnikov, 22:9 (1988), 1651–1656 |
| 12. |
O. P. Verbitskii, L. A. Kosyachenko, V. P. Makhniy, V. D. Ryzhikov, “PROPERTIES OF THE SCINTILLATOR-PHOTODIODE SYSTEM BASED ON THE SELENIDE
ZINC TELLURIDE STRUCTURE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:8 (1988), 702–705 |
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1987 |
| 13. |
I. S. Kabanova, L. A. Kosyachenko, V. P. Makhniy, “Tunneling in Gallium-Phosphide Schottky Diodes”, Fizika i Tekhnika Poluprovodnikov, 21:11 (1987), 2087–2090 |
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1986 |
| 14. |
N. V. Gorbenko, L. A. Kosyachenko, V. P. Makhniy, M. K. Sheĭnkman, “Radiative Recombination on Donor-Acceptor Pairs in the Space-Charge Region of Au-ZnS Diodes”, Fizika i Tekhnika Poluprovodnikov, 20:4 (1986), 619–624 |
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1984 |
| 15. |
L. A. Kosyachenko, V. P. Makhniy, “Влияние закона дисперсии на туннелирование носителей в CdTe-диодах”, Fizika i Tekhnika Poluprovodnikov, 18:7 (1984), 1285–1287 |
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