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Publications in Math-Net.Ru |
Citations |
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1992 |
| 1. |
A. A. Shmatov, “On the correlation function in relaxation spectroscopy of deep level”, Fizika i Tekhnika Poluprovodnikov, 26:3 (1992), 473–476  |
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1989 |
| 2. |
V. S. L'vov, V. I. Strikha, Tretyak, A. A. Shmatov, “Intercenter carrier transitions in partially disordered silicon: experiment and discussion of results”, Fizika Tverdogo Tela, 31:11 (1989), 206–213 |
| 3. |
V. S. L'vov, V. I. Strikha, Tretyak, A. A. Shmatov, “Intercenter carrier transitions in partially disordered silicon: calculation”, Fizika Tverdogo Tela, 31:11 (1989), 197–205 |
| 4. |
I. N. Belokurova, O. V. Tretyak, S. I. Shakhovtsova, M. M. Shvarts, A. A. Shmatov, “Емкостная спектроскопия глубоких уровней облученных твердых растворов
германий$-$кремний”, Fizika i Tekhnika Poluprovodnikov, 23:10 (1989), 1869–1873 |
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1988 |
| 5. |
T. V. Torchinskaya, A. G. Karabaev, Z. S. Abdullaev, A. A. Shmatov, M. K. Sheĭnkman, “CERTAIN CAUSES OF INSTABILITY OF GAP-N LIGHTDIODES”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:18 (1988), 1710–1716 |
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1987 |
| 6. |
V. I. Strikha, O. V. Tretyak, A. A. Shmatov, G. M. Mozok, “To the Problem on the Measurement of Capacity Relaxation in the Spectroscopy of Deep Levels”, Fizika i Tekhnika Poluprovodnikov, 21:4 (1987), 653–656 |
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1986 |
| 7. |
T. V. Torchinskaya, A. A. Shmatov, V. I. Strochkov, M. K. Sheĭnkman, “Transformation of Deep Centers during Degradation of GaP$\langle$N, Zn$-$O$\rangle$ Light-Emitting Diodes”, Fizika i Tekhnika Poluprovodnikov, 20:4 (1986), 701–707 |
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1985 |
| 8. |
F. I. Borisov, Yu. V. Vorob'ev, V. I. Strikha, O. V. Tretyak, A. A. Shmatov, “Study of Spin-Dependent Recombination in the Films of Silicon on Sapphire”, Fizika i Tekhnika Poluprovodnikov, 19:5 (1985), 869–873 |
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1984 |
| 9. |
F. I. Borisov, V. I. Strikha, O. V. Tretyak, A. A. Shmatov, “Спин-зависимая генерация неравновесных носителей заряда”, Fizika i Tekhnika Poluprovodnikov, 18:9 (1984), 1552–1555 |
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