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Publications in Math-Net.Ru |
Citations |
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1992 |
| 1. |
I. I. Kolkovskii, V. F. Latyshenko, P. F. Lugakov, V. V. Shusha, “Recombination of charge carriers in thermally treated Si with different types of growth microdefects”, Fizika i Tekhnika Poluprovodnikov, 26:1 (1992), 176–180  |
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1989 |
| 2. |
I. I. Kolkovskii, P. F. Lugakov, V. V. Shusha, “Особенности образования рекомбинационных центров
при облучении бездислокационного $n$-Si”, Fizika i Tekhnika Poluprovodnikov, 23:5 (1989), 885–887 |
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1987 |
| 3. |
I. I. Kolkovskii, V. V. Shusha, “Characteristic Properties of the Annealing of Recombination Centers in Neutron-Doped Silicon”, Fizika i Tekhnika Poluprovodnikov, 21:11 (1987), 1974–1977 |
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1986 |
| 4. |
P. F. Lugakov, V. V. Luk'yanitsa, V. V. Shusha, “Characteristic Properties of Radiation-Defect Accumulation in $p$-Type High-Resistance Silicon”, Fizika i Tekhnika Poluprovodnikov, 20:10 (1986), 1894–1897 |
| 5. |
I. I. Kolkovskii, P. F. Lugakov, V. V. Shusha, “Recombination Properties of Radiation-Induced Defects in Transniutationally Doped Silicon”, Fizika i Tekhnika Poluprovodnikov, 20:5 (1986), 964–967 |
| 6. |
L. A. Kazakevich, P. F. Lugakov, I. M. Filippov, V. V. Shusha, “Recombination Activity of Dislocations in Silicon”, Fizika i Tekhnika Poluprovodnikov, 20:4 (1986), 767–770 |
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