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Publications in Math-Net.Ru |
Citations |
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2020 |
| 1. |
V. V. Emtsev, N. V. Abrosimov, V. V. Kozlovski, G. A. Oganesyan, D. S. Poloskin, “Vacancy-phosphorus complexes in electron-irradiated floating-zone $n$-type silicon: new points in annealing studies”, Fizika i Tekhnika Poluprovodnikov, 54:1 (2020), 45   ; Semiconductors, 54:1 (2020), 46–54 |
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2019 |
| 2. |
A. A. Lebedev, I. P. Nikitina, N. V. Seredova, N. K. Poletaev, S. P. Lebedev, V. V. Kozlovskii, A. V. Zubov, “A study of the influence exerted by structural defects on photoluminescence spectra in $n$-3$C$-SiC”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019), 28–30 ; Tech. Phys. Lett., 45:6 (2019), 557–559 |
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2018 |
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V. V. Emtsev, N. V. Abrosimov, V. V. Kozlovski, D. S. Poloskin, G. A. Oganesyan, “Interaction rates of group-III and group-V impurities with intrinsic point defects in irradiated Si and Ge”, Fizika i Tekhnika Poluprovodnikov, 52:13 (2018), 1578 ; Semiconductors, 52:13 (2018), 1677–1685 |
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2017 |
| 4. |
V. V. Emtsev, V. V. Kozlovski, D. S. Poloskin, G. A. Oganesyan, “Radiation-produced defects in germanium: experimental data and models of defects”, Fizika i Tekhnika Poluprovodnikov, 51:12 (2017), 1632–1646 ; Semiconductors, 51:12 (2017), 1571–1587 |
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2016 |
| 5. |
V. V. Emtsev, N. V. Abrosimov, V. V. Kozlovskii, G. A. Oganesyan, D. S. Poloskin, “Some challenging points in the identification of defects in floating-zone $n$-type silicon irradiated with 8 and 15 Mev protons”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1313–1319 ; Semiconductors, 50:10 (2016), 1291–1298 |
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2014 |
| 6. |
V. V. Emtsev, N. V. Abrosimov, V. V. Kozlovskii, G. A. Oganesyan, “Electrical properties of diluted $n$- and $p$-Si$_{1-x}$Ge$_x$ at small $x$”, Fizika i Tekhnika Poluprovodnikov, 48:12 (2014), 1592–1596 ; Semiconductors, 48:12 (2014), 1552–1556 |
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1992 |
| 7. |
E. N. Mokhov, E. D. Gornushkina, V. A. Didik, V. V. Kozlovskii, “Phosphorus diffusion in silicon carbide”, Fizika Tverdogo Tela, 34:6 (1992), 1956–1958 |
| 8. |
V. V. Kozlovskii, L. F. Zakharenkov, B. A. Shustrov, “Transmutation doping of semiconductors under te action of charged particles (Review)”, Fizika i Tekhnika Poluprovodnikov, 26:1 (1992), 3–21 |
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1984 |
| 9. |
V. V. Kozlovskii, V. N. Lomasov, “REDISTRIBUTION OF A CHARGED ADMIXTURE IN A SEMICONDUCTOR IN CONDITIONS
OF PROTON-STIMULATED DIFFUSION”, Zhurnal Tekhnicheskoi Fiziki, 54:6 (1984), 1157–1162 |
| 10. |
V. V. Kozlovskii, V. N. Lomasov, G. M. Gur'yanov, A. P. Kovarskiy, “Antimony Diffusion in Silicon Stimulated by Protons”, Fizika i Tekhnika Poluprovodnikov, 18:5 (1984), 958–960 |
| 11. |
V. V. Kozlovskii, V. N. Lomasov, “Effect of Surface on Radiation Defect Formation in Silicon under High-Temperature Proton Irradiation”, Fizika i Tekhnika Poluprovodnikov, 18:5 (1984), 956–958 |
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