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Publications in Math-Net.Ru |
Citations |
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2024 |
| 1. |
O. V. Aleksandrov, S. A. Mokrushina, “Model of behavior of MOS structures during radiation-thermal treatments”, Zhurnal Tekhnicheskoi Fiziki, 94:11 (2024), 1843–1847   |
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2023 |
| 2. |
O. V. Aleksandrov, “Early formation of surface states in MOS structures under ionizing irradiation”, Fizika Tverdogo Tela, 65:5 (2023), 762–766 |
| 3. |
O. V. Aleksandrov, “Model of breakdown of MOS-structures by the mechanism of anode hydrogen release”, Fizika i Tekhnika Poluprovodnikov, 57:9 (2023), 784–788 |
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2022 |
| 4. |
O. V. Aleksandrov, “Dispersive transport of Hole polarons in MOS-structures after the ionizing irradiation”, Fizika i Tekhnika Poluprovodnikov, 56:12 (2022), 1154–1158 |
| 5. |
O. V. Aleksandrov, “Dimensional effect in MOS-structures under ionizing irradiation”, Fizika i Tekhnika Poluprovodnikov, 56:6 (2022), 591–595 |
| 6. |
O. V. Aleksandrov, N. S. Tyapkin, S. A. Mokrushina, V. N. Fomin, “Effect of ionizing radiation on charge distribution and breakdown of mosfets”, Fizika i Tekhnika Poluprovodnikov, 56:2 (2022), 250–253 |
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2021 |
| 7. |
O. V. Aleksandrov, “Latent accumulation of surface states in MOS structures after exposure to ionizing radiation”, Fizika i Tekhnika Poluprovodnikov, 55:7 (2021), 559–563 ; Semiconductors, 55:6 (2021), 578–582 |
| 8. |
O. V. Aleksandrov, “The effect of the ionizing radiation intensity on the response of MOS structures”, Fizika i Tekhnika Poluprovodnikov, 55:2 (2021), 152–158 ; Semiconductors, 55:2 (2021), 207–213 |
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2020 |
| 9. |
O. V. Aleksandrov, “Dispersive transport of hydrogen in MOS structures after exposure to ionizing radiation”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1029–1033 ; Semiconductors, 54:10 (2020), 1215–1219 |
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| 10. |
O. V. Aleksandrov, S. A. Mokrushina, “Model of the effect of the gate bias on MOS structures under ionizing radiation”, Fizika i Tekhnika Poluprovodnikov, 54:2 (2020), 189–194 ; Semiconductors, 54:2 (2020), 240–245 |
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| 11. |
O. V. Aleksandrov, “Model of the negative-bias temperature instability of $p$-MOS transistors”, Fizika i Tekhnika Poluprovodnikov, 54:2 (2020), 181–188 ; Semiconductors, 54:2 (2020), 233–239 |
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2019 |
| 12. |
N. A. Sobolev, O. V. Aleksandrov, V. I. Sakharov, I. T. Serenkov, E. I. Shek, A. E. Kalyadin, E. O. Parshin, N. S. Melesov, “Influence of annealing temperature on electrically active centers in silicon implanted with germanium ions”, Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 161–164 ; Semiconductors, 53:2 (2019), 153–155 |
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2018 |
| 13. |
O. V. Aleksandrov, A. N. Ageev, S. I. Zolotarev, “Charge accumulation in MOS structures with a polysilicon gate under tunnel injection”, Fizika i Tekhnika Poluprovodnikov, 52:13 (2018), 1625–1630 ; Semiconductors, 52:13 (2018), 1732–1737 |
| 14. |
O. V. Aleksandrov, S. A. Mokrushina, “Model for charge accumulation in $n$- and $p$-MOS transistors during tunneling electron injection from a gate”, Fizika i Tekhnika Poluprovodnikov, 52:6 (2018), 637–642 ; Semiconductors, 52:6 (2018), 783–788 |
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2017 |
| 15. |
O. V. Aleksandrov, “Influence of traps in silicon dioxide on the breakdown of MOS structures”, Fizika i Tekhnika Poluprovodnikov, 51:8 (2017), 1105–1109 ; Semiconductors, 51:8 (2017), 1062–1066 |
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2016 |
| 16. |
E. V. Ivanova, A. A. Sitnikova, O. V. Aleksandrov, M. V. Zamoryanskaya, “Growth of silicon nanoclusters in thermal silicon dioxide under annealing in an atmosphere of nitrogen”, Fizika i Tekhnika Poluprovodnikov, 50:6 (2016), 807–810 ; Semiconductors, 50:6 (2016), 791–794 |
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2015 |
| 17. |
O. V. Aleksandrov, “On the effect of bias on the behavior of MOS structures subjected to ionizing radiation”, Fizika i Tekhnika Poluprovodnikov, 49:6 (2015), 793–798 ; Semiconductors, 49:6 (2015), 774–779 |
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| 18. |
N. A. Sobolev, D. V. Danilov, O. V. Aleksandrov, A. S. Loshachenko, V. I. Sakharov, I. T. Serenkov, E. I. Shek, I. N. Trapeznikova, “Formation of donor centers upon the annealing of silicon light-emitting structures implanted with oxygen ions”, Fizika i Tekhnika Poluprovodnikov, 49:3 (2015), 418–420 ; Semiconductors, 49:3 (2015), 406–408 |
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2014 |
| 19. |
O. V. Aleksandrov, “Model of the behavior of MOS structures under ionizing irradiation”, Fizika i Tekhnika Poluprovodnikov, 48:4 (2014), 523–528 ; Semiconductors, 48:4 (2014), 505–510 |
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1992 |
| 20. |
O. V. Aleksandrov, B. N. Shevchenko, I. P. Matkhanova, A. V. Kamenec, “Influence of radiation-induced defects injected by $\alpha$-particles on back currents of silicon $p{-}n$ junctions”, Fizika i Tekhnika Poluprovodnikov, 26:5 (1992), 868–871 |
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1989 |
| 21. |
O. V. Aleksandrov, R. N. Kyutt, V. I. Prokhorov, L. M. Sorokin, “Kinetics of phosphorus solid solution decomposition in diffused $\mathrm{Si}$ layers”, Fizika Tverdogo Tela, 31:10 (1989), 182–188 |
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1988 |
| 22. |
O. V. Aleksandrov, O. M. Ivanenko, V. R. Karasik, K. V. Kiseleva, K. V. Mitsen, O. E. Omel'yanovskii, “Low temperature structural instability of the high $T_{c}$ superconductor $\mathrm{YBa}_{2}\mathrm{Cu}_{3}\mathrm{O}_{7-x}$”, Fizika Tverdogo Tela, 30:7 (1988), 2052–2057 |
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1984 |
| 23. |
O. V. Aleksandrov, N. V. Ashkinadze, R. Z. Tumarov, “Complex-formation at phosphorus diffusion into silicon”, Fizika Tverdogo Tela, 26:2 (1984), 632–634 |
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