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Publications in Math-Net.Ru |
Citations |
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1992 |
| 1. |
S. K. Boitsov, T. L. Makarova, V. Yu. Osipov, “On tunneling through the interfacial ($19$–$50$ A thick) oxide layer of silicon SIS structures”, Fizika Tverdogo Tela, 34:5 (1992), 1465–1472  |
| 2. |
A. Ya. Bul', A. T. Dideikin, S. K. Boitsov, Yu. S. Zinchik, A. V. Sachenko, “Effect of photocurrent amplification in semiconductor–tunnelly transparent dielectric–semiconductor structures”, Fizika i Tekhnika Poluprovodnikov, 26:2 (1992), 295–304 |
| 3. |
A. Ya. Vul', A. T. Dideikin, V. Yu. Osipov, S. K. Boitsov, Yu. S. Zinchik, T. L. Makarova, “Current–voltage and capacity–voltage characteristics of silicon semiconductor–dielectric–semiconductor structures with dielectric of thickness less than 50 Angströms”, Fizika i Tekhnika Poluprovodnikov, 26:1 (1992), 146–149 |
| 4. |
A. Ya. Vul', T. L. Makarova, V. Yu. Osipov, Yu. S. Zinchik, S. K. Boitsov, “kinetics of silicon oxidation and structure of oxide layers of thickness less than 50 Angströms”, Fizika i Tekhnika Poluprovodnikov, 26:1 (1992), 111–121 |
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1991 |
| 5. |
S. K. Boitsov, A. Ya. Vul', A. T. Dideikin, Yu. S. Zinchik, V. Yu. Osipov, T. L. Makarova, “Current passage through a tunneling-transparent insulator”, Fizika Tverdogo Tela, 33:6 (1991), 1784–1791 |
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