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Freiman, Vitalii Maksimovich

Statistics Math-Net.Ru
Total publications: 7
Scientific articles: 7

Number of views:
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Abstract pages:726
Full texts:347

https://www.mathnet.ru/eng/person178172
List of publications on Google Scholar

Publications in Math-Net.Ru Citations
2025
1. G. G. Savenkov, U. M. Poberezhnaya, A. I. Kozachuk, V. M. Freiman, A. G. Zegrya, G. G. Zegrya, “Combustion rate and response time of porous silicon-based ignition compositions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:7 (2025),  43–45  mathnet  elib
2024
2. G. G. Savenkov, V. A. Morozov, M. A. Ilyushin, U. M. Poberezhnaya, V. M. Freiman, A. G. Zegrya, V. A. Bragin, D. V. Fadeev, G. G. Zegrya, “Pecyliarities of initiation by high-current electron beam of energy composites based on porous silicon with niobium boride and graphene additives”, Zhurnal Tekhnicheskoi Fiziki, 94:1 (2024),  119–124  mathnet  elib
2023
3. G. G. Zegrya, V. P. Ulin, A. G. Zegrya, V. M. Freiman, N. V. Ulin, D. V. Fadeev, G. G. Savenkov, “Limiting thickness of pore walls formed in processes of anode etching of heavily doped semiconductors”, Zhurnal Tekhnicheskoi Fiziki, 93:2 (2023),  281–285  mathnet  elib
2022
4. U. M. Poberezhnaya, V. M. Freiman, M. A. Ilyushin, G. G. Zegrya, D. V. Fadeev, I. A. Oskin, V. A. Morozov, A. Yu. Grigor'ev, G. G. Savenkov, “Optical and electron-beam initiation of porous silicon films with different contents of oxidizer and graphene”, Zhurnal Tekhnicheskoi Fiziki, 92:11 (2022),  1699–1704  mathnet  elib
5. G. G. Savenkov, A. I. Kozachuk, U. M. Poberezhnaya, V. M. Freiman, G. G. Zegrya, “Combustion rate of powdered porous silicon with limited space”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:4 (2022),  7–10  mathnet  elib
2021
6. G. G. Zegrya, E. V. Shashkov, A. A. Karpova, N. S. Vorobiev, V. M. Freiman, A. G. Zegrya, Yu. S. Solomonov, “Laser effect in the explosion of porous silicon”, Pis'ma v Zh. Èksper. Teoret. Fiz., 114:4 (2021),  263–268  mathnet; JETP Letters, 114:4 (2021), 227–231  isi  scopus 1
2019
7. G. G. Zegrya, V. P. Ulin, A. G. Zegrya, N. V. Ulin, V. M. Freiman, Yu. M. Mikhailov, “Effect of conductivity type and doping level of silicon crystals on the size of formed pore channels during anodic etching in hydrofluoric acid solutions”, Zhurnal Tekhnicheskoi Fiziki, 89:10 (2019),  1575–1584  mathnet  elib; Tech. Phys., 64:10 (2019), 1492–1500 6

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