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Publications in Math-Net.Ru |
Citations |
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2017 |
| 1. |
A. M. Yafyasov, V. B. Bozhevol'nov, E. I. Ryumtsev, A. P. Kovshik, V. Yu. Mikhailovskii, “New mechanism of semiconductor polarization at the interface with an organic insulator”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 202–204   ; Semiconductors, 51:2 (2017), 193–195 |
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2014 |
| 2. |
V. B. Bozhevol'nov, A. M. Yafyasov, V. Yu. Miailovskii, Yu. V. Egorova, A. A. Sokolov, E. O. Filatova, “Electrical properties of a SiC–Si multilayer structure”, Fizika i Tekhnika Poluprovodnikov, 48:6 (2014), 814–817 ; Semiconductors, 48:6 (2014), 792–795 |
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2013 |
| 3. |
G. N. Fursei, A. A. Kantonistov, M. A. Polyakov, A. M. Yafyasov, B. S. Pavlov, V. B. Bozhevol'nov, “Field and explosive emissions from graphene-like structures”, Zhurnal Tekhnicheskoi Fiziki, 83:6 (2013), 71–77 ; Tech. Phys., 58:6 (2013), 845–851 |
44
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1992 |
| 4. |
A. M. Yafyasov, A. D. Perepelkin, V. B. Bozhevol'nov, “Study of band-structure parameters for (CdHg)Te and HgTe gapless semiconductor near-surface layers by the method of field effect in electrolytes”, Fizika i Tekhnika Poluprovodnikov, 26:4 (1992), 636–643 |
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1984 |
| 5. |
O. V. Romanov, V. B. Bozhevol'nov, Yu. N. Myasoedov, “Effect of a Field
on the Surfaces of HgTe Semimetal
and Cd$_{0.2}$Hg$_{0.8}$Te Semiconductor”, Fizika i Tekhnika Poluprovodnikov, 18:6 (1984), 1064–1068 |
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