|
|
|
Publications in Math-Net.Ru |
Citations |
|
2021 |
| 1. |
D. D. Kuznetsov, E. I. Kuznetsova, A. V. Mashirov, A. S. Loshachenko, D. V. Danilov, G. A. Shandryuk, V. G. Shavrov, V. V. Koledov, “In situ TEM study of phase transformations in nonstoichiometric geisler alloy Ni$_{46}$Mn$_{41}$In$_{13}$”, Fizika Tverdogo Tela, 63:11 (2021), 1725–1731   ; Phys. Solid State, 64:1 (2022), 15–21 |
4
|
|
2020 |
| 2. |
S. A. Kukushkin, A. V. Osipov, A. I. Romanychev, I. A. Kasatkin, A. S. Loshachenko, “Low-temperature growth of the CdS cubic phase by atomic-layer deposition on SiC/Si hybrid substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:21 (2020), 3–6 ; Tech. Phys. Lett., 46:11 (2020), 1049–1052 |
3
|
|
2017 |
| 3. |
N. V. Vysotskii, A. S. Loshachenko, O. F. Vyvenko, “Atomic configuration and charge state of hydrogen at dislocations in silicon”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 305–310 ; Semiconductors, 51:3 (2017), 293–298 |
|
2015 |
| 4. |
N. A. Sobolev, D. V. Danilov, O. V. Aleksandrov, A. S. Loshachenko, V. I. Sakharov, I. T. Serenkov, E. I. Shek, I. N. Trapeznikova, “Formation of donor centers upon the annealing of silicon light-emitting structures implanted with oxygen ions”, Fizika i Tekhnika Poluprovodnikov, 49:3 (2015), 418–420 ; Semiconductors, 49:3 (2015), 406–408 |
1
|
|
2013 |
| 5. |
N. A. Sobolev, A. S. Loshachenko, D. S. Poloskin, E. I. Shek, “Electrically active centers formed in silicon during the high-temperature diffusion of boron and aluminum”, Fizika i Tekhnika Poluprovodnikov, 47:2 (2013), 255–257 ; Semiconductors, 47:2 (2013), 289–291 |
1
|
| 6. |
A. S. Loshachenko, O. F. Vyvenko, E. I. Shek, N. A. Sobolev, “The electrically active centers in oxygen-implanted silicon”, Fizika i Tekhnika Poluprovodnikov, 47:2 (2013), 251–254 ; Semiconductors, 47:2 (2013), 285–288 |
|
| Organisations |
|
|
