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Publications in Math-Net.Ru |
Citations |
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2026 |
| 1. |
M. S. Afanasiev, D. A. Belorusov, E. I. Goldman, G. V. Chucheva, A. V. Semchenko, V. A. Pilipenko, “Высокочастотные вольт-фарадные характеристики структур металл–Ba$_{0.8}$Sr$_{0.2}$TiO$_3$–термический окисел–кремний”, Fizika Tverdogo Tela, 68:3 (2026), 429–433  |
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2025 |
| 2. |
D. A. Belorusov, E. I. Goldman, G. V. Chucheva, “On the properties of the transition layer between the silicon substrate and the ferroelectric or high-k-dielectric insulating gap”, Fizika Tverdogo Tela, 67:5 (2025), 832–836  |
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2022 |
| 3. |
D. A. Belorusov, E. I. Goldman, G. V. Chucheva, “The effect of a strong static electric field and heating on characteristics of the high-frequency impedance of metal–ferroelectric–semiconductor structures”, Fizika Tverdogo Tela, 64:5 (2022), 556–559 |
| 4. |
E. I. Goldman, G. V. Chucheva, I. A. Shusharin, “Insulating potential shape created by ultrathin silicon oxide layers”, Fizika i Tekhnika Poluprovodnikov, 56:3 (2022), 328–334 |
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2021 |
| 5. |
D. A. Belorusov, E. I. Goldman, G. V. Chucheva, “A weak manifestation of the field effect in metal-dielectric-semiconductor structures with a ferroelectric insulating layer
Ba$_{x}$Sr$_{1-x}$TiO$_{3}$”, Fizika Tverdogo Tela, 63:11 (2021), 1887–1889 |
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| 6. |
D. A. Belorusov, E. I. Goldman, V. G. Naryshkina, G. V. Chucheva, “Silicon ultrathin oxide (4.2 nm) – polysilicon structures resistant to field damages”, Fizika i Tekhnika Poluprovodnikov, 55:1 (2021), 24–27 ; Semiconductors, 55:1 (2021), 21–24 |
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2020 |
| 7. |
E. I. Goldman, V. G. Naryshkina, G. V. Chucheva, “Electrophysical properties investigation of Ba$_{0.8}$Sr$_{0.2}$TiO$_{3}$ ferroelectric films in paraelectric state”, Fizika Tverdogo Tela, 62:8 (2020), 1226–1231 ; Phys. Solid State, 62:8 (2020), 1380–1385 |
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| 8. |
M. S. Afanasiev, E. I. Goldman, G. V. Chucheva, A. E. Nabiyev, J. И. Huseynov, N. Sh. Aliev, “Conductivity of metal–dielectric–semiconductor structures based on ferroelectric films”, Fizika Tverdogo Tela, 62:1 (2020), 121–124 ; Phys. Solid State, 62:1 (2020), 164–167 |
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2019 |
| 9. |
E. I. Goldman, S. A. Levashov, G. V. Chucheva, “Features of the characteristics of field-resistant silicon–ultrathin oxide–polysilicon structures”, Fizika i Tekhnika Poluprovodnikov, 53:4 (2019), 481–484 ; Semiconductors, 53:4 (2019), 465–468 |
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| 10. |
E. I. Goldman, A. E. Nabiyev, V. G. Naryshkina, G. V. Chucheva, “On the nature of the increase in the electron mobility in the inversion channel at the silicon–oxide interface after the field effect”, Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 89–92 ; Semiconductors, 53:1 (2019), 85–88 |
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| 11. |
E. I. Goldman, N. F. Kuharskaya, S. A. Levashov, G. V. Chucheva, “Determination of the parameters of metal–insulator–semiconductor structures with ultrathin insulating layer from high-frequency capacitance–voltage measurements”, Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 46–49 ; Semiconductors, 53:1 (2019), 42–45 |
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2017 |
| 12. |
E. I. Goldman, S. A. Levashov, V. G. Naryshkina, G. V. Chucheva, “Generation of surface electron states with a silicon–ultrathin-oxide interface under the field-induced damage of metal–oxide–semiconductor structures”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1185–1188 ; Semiconductors, 51:9 (2017), 1136–1140 |
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2015 |
| 13. |
E. I. Goldman, A. I. Levashova, S. A. Levashov, G. V. Chucheva, “Features of high-frequency measurements of the impedance of metal-insulator-semiconductor structures with an ultrathin oxide”, Fizika i Tekhnika Poluprovodnikov, 49:4 (2015), 483–488 ; Semiconductors, 49:4 (2015), 472–478 |
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2011 |
| 14. |
E. I. Goldman, N. F. Kuharskaya, V. G. Naryshkina, G. V. Chucheva, “Manifestation of excess centers of electron-hole pair generation resulting from field and thermal stresses and their subsequent annihilation in dynamic current-voltage characteristics of Si-MOS structures with ultrathin oxide”, Fizika i Tekhnika Poluprovodnikov, 45:7 (2011), 974–979 ; Semiconductors, 45:7 (2011), 944–949 |
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2010 |
| 15. |
E. I. Goldman, Yu. V. Gulyaev, A. G. Zhdan, G. V. Chucheva, “Direct tunneling of electrons in Al–$n^+$-Si–SiO$_2$–$n$-Si structures under conditions of nonstationary depletion of the semiconductor surface of the majority charge carriers”, Fizika i Tekhnika Poluprovodnikov, 44:8 (2010), 1050–1052 ; Semiconductors, 44:8 (2010), 1016–1019 |
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2008 |
| 16. |
E. I. Goldman, A. G. Zhdan, N. F. Kuharskaya, M. V. Chernyaev, “Reconstruction of the potential profile in an insulating layer using current-voltage characteristics of tunneling MIS diodes”, Fizika i Tekhnika Poluprovodnikov, 42:1 (2008), 94–100 ; Semiconductors, 42:1 (2008), 92–98 |
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1992 |
| 17. |
E. I. Goldman, A. G. Zhdan, A. M. Sumaroka, “Термическая генерация неосновных носителей заряда у границы раздела полупроводник$-$диэлектрик через глубокий уровень в приповерхностном слое обеднения”, Fizika i Tekhnika Poluprovodnikov, 26:12 (1992), 2048–2056 |
| 18. |
E. I. Goldman, “Determination of spatial disposition of localized electron states at semiconductor–dielectric interface”, Fizika i Tekhnika Poluprovodnikov, 26:4 (1992), 766–770 |
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