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Publications in Math-Net.Ru |
Citations |
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2026 |
| 1. |
M. S. Afanasiev, D. A. Belorusov, E. I. Goldman, G. V. Chucheva, A. V. Semchenko, V. A. Pilipenko, “Высокочастотные вольт-фарадные характеристики структур металл–Ba$_{0.8}$Sr$_{0.2}$TiO$_3$–термический окисел–кремний”, Fizika Tverdogo Tela, 68:3 (2026), 429–433  |
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2025 |
| 2. |
M. S. Afanasiev, D. A. Belorusov, D. A. Kiselev, V. A. Luzanov, G. V. Chucheva, “Reliability of MIS structures based on films of barium strontium titanate and hafnium oxide”, Fizika Tverdogo Tela, 67:10 (2025), 1928–1931  |
| 3. |
D. A. Belorusov, E. I. Goldman, G. V. Chucheva, “On the properties of the transition layer between the silicon substrate and the ferroelectric or high-k-dielectric insulating gap”, Fizika Tverdogo Tela, 67:5 (2025), 832–836 |
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2023 |
| 4. |
M. S. Afanasiev, D. A. Belorusov, D. A. Kiselev, G. V. Chucheva, “Influence of the upper electrode material on the electrophysical properties of MDM structures based on ferroelectric films”, Fizika Tverdogo Tela, 65:6 (2023), 1060–1064 |
| 5. |
M. S. Afanasiev, D. A. Belorusov, D. A. Kiselev, V. A. Luzanov, G. V. Chucheva, “Formation and study of metal-insulator-semiconductor structures based on hafnium oxide films”, Fizika Tverdogo Tela, 65:4 (2023), 572–576 |
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2022 |
| 6. |
D. A. Kiselev, S. S. Starukhina, T. S. Ilina, N. F. Kuharskaya, V. G. Naryshkina, A. A. Sivov, G. V. Chucheva, “Effect of dopant on piezoelectric and dielectric properties of thin films Bi$_{3.25}$La$_{0.75}$Ti$_{3-x}$A$_x$O$_{12}$ ($A$ – Мn, Zr, Nb)”, Fizika Tverdogo Tela, 64:10 (2022), 1483–1488 |
| 7. |
D. A. Belorusov, E. I. Goldman, G. V. Chucheva, “The effect of a strong static electric field and heating on characteristics of the high-frequency impedance of metal–ferroelectric–semiconductor structures”, Fizika Tverdogo Tela, 64:5 (2022), 556–559 |
| 8. |
E. I. Goldman, G. V. Chucheva, I. A. Shusharin, “Insulating potential shape created by ultrathin silicon oxide layers”, Fizika i Tekhnika Poluprovodnikov, 56:3 (2022), 328–334 |
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2021 |
| 9. |
S. M. Afanas'ev, D. A. Belorusov, D. A. Kiselev, A. A. Sivov, G. V. Chucheva, “The influence of the PZT buffer layer on electrophysical properties of MDM structures with the BST film”, Fizika Tverdogo Tela, 63:11 (2021), 1895–1900 |
| 10. |
D. A. Belorusov, E. I. Goldman, G. V. Chucheva, “A weak manifestation of the field effect in metal-dielectric-semiconductor structures with a ferroelectric insulating layer
Ba$_{x}$Sr$_{1-x}$TiO$_{3}$”, Fizika Tverdogo Tela, 63:11 (2021), 1887–1889 |
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| 11. |
D. A. Belorusov, E. I. Goldman, V. G. Naryshkina, G. V. Chucheva, “Silicon ultrathin oxide (4.2 nm) – polysilicon structures resistant to field damages”, Fizika i Tekhnika Poluprovodnikov, 55:1 (2021), 24–27 ; Semiconductors, 55:1 (2021), 21–24 |
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2020 |
| 12. |
E. I. Goldman, V. G. Naryshkina, G. V. Chucheva, “Electrophysical properties investigation of Ba$_{0.8}$Sr$_{0.2}$TiO$_{3}$ ferroelectric films in paraelectric state”, Fizika Tverdogo Tela, 62:8 (2020), 1226–1231 ; Phys. Solid State, 62:8 (2020), 1380–1385 |
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| 13. |
M. S. Afanasiev, D. A. Kiselev, S. A. Levashov, A. A. Sivov, G. V. Chucheva, “Creation and investigation of metal–dielectric–semiconductor structures based on ferroelectric films”, Fizika Tverdogo Tela, 62:3 (2020), 422–426 ; Phys. Solid State, 62:3 (2020), 480–484 |
| 14. |
M. S. Afanasiev, E. I. Goldman, G. V. Chucheva, A. E. Nabiyev, J. И. Huseynov, N. Sh. Aliev, “Conductivity of metal–dielectric–semiconductor structures based on ferroelectric films”, Fizika Tverdogo Tela, 62:1 (2020), 121–124 ; Phys. Solid State, 62:1 (2020), 164–167 |
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| 15. |
M. S. Afanasiev, D. A. Belorusov, D. A. Kiselev, A. A. Sivov, G. V. Chucheva, “Dependence of the electrophysical characteristics of metal–ferroelectric–semiconductor structures on the field-electrode material”, Fizika i Tekhnika Poluprovodnikov, 54:11 (2020), 1219–1223 ; Semiconductors, 54:11 (2020), 1445–1449 |
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2019 |
| 16. |
M. S. Afanasiev, D. A. Kiselev, S. A. Levashov, A. A. Sivov, G. V. Chucheva, “The effect of synthesis temperature on the microstructure and electrophysical properties of BST 80/20 films”, Fizika Tverdogo Tela, 61:10 (2019), 1948–1952 ; Phys. Solid State, 61:10 (2019), 1910–1914 |
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| 17. |
E. I. Goldman, S. A. Levashov, G. V. Chucheva, “Features of the characteristics of field-resistant silicon–ultrathin oxide–polysilicon structures”, Fizika i Tekhnika Poluprovodnikov, 53:4 (2019), 481–484 ; Semiconductors, 53:4 (2019), 465–468 |
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| 18. |
E. I. Goldman, A. E. Nabiyev, V. G. Naryshkina, G. V. Chucheva, “On the nature of the increase in the electron mobility in the inversion channel at the silicon–oxide interface after the field effect”, Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 89–92 ; Semiconductors, 53:1 (2019), 85–88 |
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| 19. |
E. I. Goldman, N. F. Kuharskaya, S. A. Levashov, G. V. Chucheva, “Determination of the parameters of metal–insulator–semiconductor structures with ultrathin insulating layer from high-frequency capacitance–voltage measurements”, Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 46–49 ; Semiconductors, 53:1 (2019), 42–45 |
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2018 |
| 20. |
M. S. Afanasiev, D. A. Kiselev, S. A. Levashov, V. A. Luzanov, A. E. Nabiyev, V. G. Naryshkina, A. A. Sivov, G. V. Chucheva, “The influence of the substrate material on the structure and electrophysical properties of Ba$_{x}$Sr$_{1-x}$TiO$_{3}$ thin films”, Fizika Tverdogo Tela, 60:5 (2018), 951–954 ; Phys. Solid State, 60:5 (2018), 954–957 |
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2017 |
| 21. |
E. I. Goldman, S. A. Levashov, V. G. Naryshkina, G. V. Chucheva, “Generation of surface electron states with a silicon–ultrathin-oxide interface under the field-induced damage of metal–oxide–semiconductor structures”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1185–1188 ; Semiconductors, 51:9 (2017), 1136–1140 |
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2015 |
| 22. |
M. S. Afanasiev, A. E. Nabiyev, G. V. Chucheva, “Optical monitoring of the deposition process of ferroelectric films”, Fizika Tverdogo Tela, 57:7 (2015), 1354–1357 ; Phys. Solid State, 57:7 (2015), 1377–1380 |
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| 23. |
D. A. Kiselev, M. S. Afanasiev, S. A. Levashov, G. V. Chucheva, “Growth kinetics of induced domains in Ba$_{0.8}$Sr$_{0.2}$TiO$_3$ ferroelectric thin films”, Fizika Tverdogo Tela, 57:6 (2015), 1134–1137 ; Phys. Solid State, 57:6 (2015), 1151–1154 |
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| 24. |
E. I. Goldman, A. I. Levashova, S. A. Levashov, G. V. Chucheva, “Features of high-frequency measurements of the impedance of metal-insulator-semiconductor structures with an ultrathin oxide”, Fizika i Tekhnika Poluprovodnikov, 49:4 (2015), 483–488 ; Semiconductors, 49:4 (2015), 472–478 |
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2013 |
| 25. |
M. S. Afanasiev, S. A. Levashov, A. Yu. Mityagin, G. V. Chucheva, A. E. Nabiyev, “Calculation of thermal parameters and technology of formation MPL microwave range”, Izv. Sarat. Univ. Physics, 13:1 (2013), 9–12 |
| 26. |
M. S. Afanasiev, A. Yu. Mityagin, G. V. Chucheva, “Voltage-capacitance characteristics of MFS-structures based on ferroelectric films”, Izv. Sarat. Univ. Physics, 13:1 (2013), 7–9 |
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2012 |
| 27. |
G. V. Chucheva, M. S. Afanasiev, I. A. Anisimov, A. I. Georgieva, S. A. Levashov, A. E. Nabiyev, “Determining parameters of planar capacitors based of thin film ferroelectric materials”, Izv. Sarat. Univ. Physics, 12:2 (2012), 8–11 |
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2011 |
| 28. |
E. I. Goldman, N. F. Kuharskaya, V. G. Naryshkina, G. V. Chucheva, “Manifestation of excess centers of electron-hole pair generation resulting from field and thermal stresses and their subsequent annihilation in dynamic current-voltage characteristics of Si-MOS structures with ultrathin oxide”, Fizika i Tekhnika Poluprovodnikov, 45:7 (2011), 974–979 ; Semiconductors, 45:7 (2011), 944–949 |
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2010 |
| 29. |
E. I. Goldman, Yu. V. Gulyaev, A. G. Zhdan, G. V. Chucheva, “Direct tunneling of electrons in Al–$n^+$-Si–SiO$_2$–$n$-Si structures under conditions of nonstationary depletion of the semiconductor surface of the majority charge carriers”, Fizika i Tekhnika Poluprovodnikov, 44:8 (2010), 1050–1052 ; Semiconductors, 44:8 (2010), 1016–1019 |
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2009 |
| 30. |
A. G. Zhdan, V. G. Naryshkina, G. V. Chucheva, “Self-correction of field-effect transistor characteristics in the mode of spontaneous space-charge ion polarization of gate oxide”, Fizika i Tekhnika Poluprovodnikov, 43:5 (2009), 705–707 ; Semiconductors, 43:5 (2009), 677–679 |
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2017 |
| 31. |
B. V. Hlopov, G. V. Chucheva, A. B. Mityagina, “Phase changes of multiferroic magnetic materials, used in external memory systems”, Izv. Sarat. Univ. Physics, 17:1 (2017), 33–43 |
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