|
|
|
Publications in Math-Net.Ru |
Citations |
|
2022 |
| 1. |
D. A. Kiselev, S. S. Starukhina, T. S. Ilina, N. F. Kuharskaya, V. G. Naryshkina, A. A. Sivov, G. V. Chucheva, “Effect of dopant on piezoelectric and dielectric properties of thin films Bi$_{3.25}$La$_{0.75}$Ti$_{3-x}$A$_x$O$_{12}$ ($A$ – Ìn, Zr, Nb)”, Fizika Tverdogo Tela, 64:10 (2022), 1483–1488   |
|
2021 |
| 2. |
D. A. Belorusov, E. I. Goldman, V. G. Naryshkina, G. V. Chucheva, “Silicon ultrathin oxide (4.2 nm) – polysilicon structures resistant to field damages”, Fizika i Tekhnika Poluprovodnikov, 55:1 (2021), 24–27 ; Semiconductors, 55:1 (2021), 21–24 |
5
|
|
2020 |
| 3. |
E. I. Goldman, V. G. Naryshkina, G. V. Chucheva, “Electrophysical properties investigation of Ba$_{0.8}$Sr$_{0.2}$TiO$_{3}$ ferroelectric films in paraelectric state”, Fizika Tverdogo Tela, 62:8 (2020), 1226–1231 ; Phys. Solid State, 62:8 (2020), 1380–1385 |
3
|
|
2019 |
| 4. |
E. I. Goldman, A. E. Nabiyev, V. G. Naryshkina, G. V. Chucheva, “On the nature of the increase in the electron mobility in the inversion channel at the silicon–oxide interface after the field effect”, Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 89–92 ; Semiconductors, 53:1 (2019), 85–88 |
1
|
|
2018 |
| 5. |
M. S. Afanasiev, D. A. Kiselev, S. A. Levashov, V. A. Luzanov, A. E. Nabiyev, V. G. Naryshkina, A. A. Sivov, G. V. Chucheva, “The influence of the substrate material on the structure and electrophysical properties of Ba$_{x}$Sr$_{1-x}$TiO$_{3}$ thin films”, Fizika Tverdogo Tela, 60:5 (2018), 951–954 ; Phys. Solid State, 60:5 (2018), 954–957 |
4
|
|
2017 |
| 6. |
E. I. Goldman, S. A. Levashov, V. G. Naryshkina, G. V. Chucheva, “Generation of surface electron states with a silicon–ultrathin-oxide interface under the field-induced damage of metal–oxide–semiconductor structures”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1185–1188 ; Semiconductors, 51:9 (2017), 1136–1140 |
9
|
|
2011 |
| 7. |
E. I. Goldman, N. F. Kuharskaya, V. G. Naryshkina, G. V. Chucheva, “Manifestation of excess centers of electron-hole pair generation resulting from field and thermal stresses and their subsequent annihilation in dynamic current-voltage characteristics of Si-MOS structures with ultrathin oxide”, Fizika i Tekhnika Poluprovodnikov, 45:7 (2011), 974–979 ; Semiconductors, 45:7 (2011), 944–949 |
6
|
|
2009 |
| 8. |
A. G. Zhdan, V. G. Naryshkina, G. V. Chucheva, “Self-correction of field-effect transistor characteristics in the mode of spontaneous space-charge ion polarization of gate oxide”, Fizika i Tekhnika Poluprovodnikov, 43:5 (2009), 705–707 ; Semiconductors, 43:5 (2009), 677–679 |
3
|
|
| Organisations |
|
| |
|
|
Contact us: