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Publications in Math-Net.Ru |
Citations |
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2024 |
| 1. |
M. A. Putyato, V. V. Preobrazhenskii, B. R. Semyagin, N. V. Protasevich, I. B. Chistokhin, M. O. Petrushkov, E. A. Emelyanov, A. V. Vasev, A. F. Skachkov, V. V. Oleinik, S. V. Yanchur, A. V. Drondin, “InGaP/GaAs/Ge triple-junction solar cell with a thinned germanium substrate”, Zhurnal Tekhnicheskoi Fiziki, 94:5 (2024), 783–794   |
| 2. |
D. S. Abramkin, M. O. Petrushkov, D. B. Bogomolov, E. A. Emelyanov, M. A. Putyato, V. V. Preobrazhenskii, “Formation of self-assembled quantum dots during GaSbP deposition on AlP surface”, Fizika i Tekhnika Poluprovodnikov, 58:4 (2024), 185–191 |
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2023 |
| 3. |
M. A. Putyato, E. A. Emelyanov, M. O. Petrushkov, A. V. Vasev, B. R. Semyagin, V. V. Preobrazhenskii, “GaP$_x$As$_{1-x}$ solid solution growth by molecular beam epitaxy: phenomenological description of the $x$ dependence from growth conditions on GaAs(001) substrate”, Fizika i Tekhnika Poluprovodnikov, 57:2 (2023), 79–88 |
| 4. |
E. A. Emelyanov, T. A. Del, M. O. Petrushkov, A. G. Nastovjak, A. A. Spirina, T. A. Gavrilova, B. R. Semyagin, A. V. Vasev, M. A. Putyato, V. V. Preobrazhenskii, “Arrays of quasi-one-dimensional GaAs nanocrystals grown on the oxidized surface of the Si/GaAs(001) heterostructure: effect of the Si epitaxial layer on the array structure”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:3 (2023), 37–41 |
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2022 |
| 5. |
M. O. Petrushkov, M. A. Putyato, A. V. Vasev, D. S. Abramkin, E. A. Emelyanov, I. D. Loshkarev, O. S. Komkov, D. D. Firsov, V. V. Preobrazhenskii, “Molecular beam epitaxy of GaSb on vicinal Si(001) substrates: influence of the conditions of layer nucleation on their structural and optical properties”, Fizika i Tekhnika Poluprovodnikov, 56:10 (2022), 980–992 |
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2021 |
| 6. |
D. S. Abramkin, M. O. Petrushkov, E. A. Emelyanov, A. V. Nenashev, M. Yu. Yesin, A. V. Vasev, M. A. Putyato, D. B. Bogomolov, A. K. Gutakovskii, V. V. Preobrazhenskii, “Formation of InAs/GaP heterostructures with quantum wells on silicon substrates by molecular beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 55:2 (2021), 139–146 ; Semiconductors, 55:2 (2021), 194–201 |
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2020 |
| 7. |
M. O. Petrushkov, D. S. Abramkin, E. A. Emelyanov, M. A. Putyato, A. V. Vasev, I. D. Loshkarev, M. Yu. Yesin, O. S. Komkov, D. D. Firsov, V. V. Preobrazhenskii, “Effect of the crystallographic orientation of GaSb films on their structural properties during MBE heteroepitaxy on vicinal Si(001) substrates”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1289–1295 ; Semiconductors, 54:12 (2020), 1548–1554 |
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| 8. |
E. A. Emelyanov, A. G. Nastovjak, M. O. Petrushkov, M. Yu. Yesin, T. A. Gavrilova, M. A. Putyato, N. L. Shwartz, V. A. Shvets, A. V. Vasev, B. R. Semyagin, V. V. Preobrazhenskii, “A mask based on a Si epitaxial layer for the self-catalytic nanowire growth on GaAs (111)$B$ and GaAs (100) substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:4 (2020), 11–14 ; Tech. Phys. Lett., 46:2 (2020), 161–164 |
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2019 |
| 9. |
M. A. Putyato, N. A. Valisheva, M. O. Petrushkov, V. V. Preobrazhenskii, I. B. Chistokhin, B. R. Semyagin, E. A. Emelyanov, A. V. Vasev, A. F. Skachkov, G. I. Yurko, I. I. Nesterenko, “A lightweight flexible solar cell based on a heteroepitaxial InGaP/GaAs structure”, Zhurnal Tekhnicheskoi Fiziki, 89:7 (2019), 1071–1078 ; Tech. Phys., 64:7 (2019), 1010–1016 |
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| 10. |
D. S. Abramkin, M. O. Petrushkov, M. A. Putyato, B. R. Semyagin, E. A. Emelyanov, V. V. Preobrazhenskii, A. K. Gutakovskii, T. S. Shamirzaev, “GaAs/GaP quantum-well heterostructures grown on Si substrates”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1167–1171 ; Semiconductors, 53:9 (2019), 1143–1147 |
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| 11. |
E. A. Emelyanov, A. V. Vasev, B. R. Semyagin, M. Yu. Yesin, I. D. Loshkarev, A. P. Vasilenko, M. A. Putyato, M. O. Petrushkov, V. V. Preobrazhenskii, “The growth of InAs$_{x}$Sb$_{1-x}$ solid solutions on miscuted GaAs(001) substrates by molecular-beam epitaxy method”, Fizika i Tekhnika Poluprovodnikov, 53:4 (2019), 512–519 ; Semiconductors, 53:4 (2019), 503–510 |
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2018 |
| 12. |
D. S. Abramkin, M. O. Petrushkov, M. A. Putyato, B. R. Semyagin, T. S. Shamirzaev, “Heterostructures with InAs/AlAs quantum wells and quantum dots grown on GaAs/Si hybrid substrates”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1373–1379 ; Semiconductors, 52:11 (2018), 1484–1490 |
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| 13. |
M. O. Petrushkov, M. A. Putyato, I. B. Chistokhin, B. R. Semyagin, E. A. Emelyanov, M. Yu. Yesin, T. A. Gavrilova, A. V. Vasev, V. V. Preobrazhenskii, “Zinc diffusion into InP via a narrow gap from a planar Zn$_{3}$P$_{2}$-based source”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:14 (2018), 19–25 ; Tech. Phys. Lett., 44:7 (2018), 612–614 |
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| 14. |
I. D. Loshkarev, A. P. Vasilenko, E. M. Trukhanov, A. V. Kolesnikov, M. O. Petrushkov, M. A. Putyato, “X-ray diffraction analysis of epitaxial layers with the properties of a dislocation filter”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:13 (2018), 19–27 ; Tech. Phys. Lett., 44:7 (2018), 562–565 |
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2017 |
| 15. |
I. D. Loshkarev, A. P. Vasilenko, E. M. Trukhanov, A. V. Kolesnikov, M. A. Putyato, M. Yu. Yesin, M. O. Petrushkov, “The structural state of epitaxial GaP films of different polarities grown on misoriented Si(001) substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:4 (2017), 64–71 ; Tech. Phys. Lett., 43:2 (2017), 213–215 |
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