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Publications in Math-Net.Ru |
Citations |
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2024 |
| 1. |
L. K. Orlov, T. E. Zedomi, A. S. Ivina, M. L. Orlov, “High-frequency properties of a two-dimensional quantum superlattice in a strong homogeneous electric field”, Fizika i Tekhnika Poluprovodnikov, 58:2 (2024), 78–88   |
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2021 |
| 2. |
M. L. Orlov, L. K. Orlov, “Features of electron transport in two-dimensional quantum superlattices with the non-associative dispersion law”, Fizika i Tekhnika Poluprovodnikov, 55:3 (2021), 241–250 ; Semiconductors, 55:3 (2021), 319–327 |
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2018 |
| 3. |
M. L. Orlov, N. S. Volkova, N. L. Ivina, L. K. Orlov, “Electric-field behavior of the resonance features of the tunneling photocurrent component in InAs(QD)/GaAs heterostructures”, Fizika i Tekhnika Poluprovodnikov, 52:9 (2018), 1006–1014 ; Semiconductors, 52:9 (2018), 1129–1136 |
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2016 |
| 4. |
R. Kh. Zhukavin, K. A. Kovalevsky, M. L. Orlov, V. V. Tsyplenkov, H.-W. Hübers, N. Dessmann, D. V. Kozlov, V. N. Shastin, “Terahertz absorption and emission upon the photoionization of acceptors in uniaxially stressed silicon”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1479–1483 ; Semiconductors, 50:11 (2016), 1458–1462 |
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2015 |
| 5. |
R. Kh. Zhukavin, K. A. Kovalevsky, M. L. Orlov, V. V. Tsyplenkov, N. A. Bekin, A. N. Yablonskii, P. A. Yunin, S. G. Pavlov, N. V. Abrosimov, H.-W. Hubers, H. H. Radamson, V. N. Shastin, “Terahertz-range spontaneous emission under the optical excitation of donors in uniaxially stressed bulk silicon and SiGe/Si heterostructures”, Fizika i Tekhnika Poluprovodnikov, 49:1 (2015), 15–20 ; Semiconductors, 49:1 (2015), 13–18 |
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2014 |
| 6. |
M. L. Orlov, J. Horvath, N. L. Ivina, V. N. Neverov, L. K. Orlov, “Features of electron transport in relaxed Si/Si$_{1-x}$Ge$_x$ transistor heterostructures with a high doping level”, Fizika i Tekhnika Poluprovodnikov, 48:7 (2014), 970–982 ; Semiconductors, 48:7 (2014), 942–953 |
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2012 |
| 7. |
Yu. Yu. Romanova, M. L. Orlov, Yu. A. Romanov, “Tunneling and current characteristics of two-miniband superlattice”, Fizika i Tekhnika Poluprovodnikov, 46:11 (2012), 1475–1482 ; Semiconductors, 46:11 (2012), 1443–1450 |
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