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Publications in Math-Net.Ru |
Citations |
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2022 |
| 1. |
A. V. Uvarov, V. A. Sharov, D. A. Kudriashov, A. S. Gudovskikh, “Impact of silicon wafer surface treatment on the morphology of GaP layers produced by plasma enhanced atomic layer deposition”, Fizika i Tekhnika Poluprovodnikov, 56:2 (2022), 213–220   |
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2021 |
| 2. |
D. A. Kudriashov, A. A. Maksimova, E. A. Vyacheslavova, A. V. Uvarov, I. A. Morozov, A. I. Baranov, A. O. Monastyrenko, A. S. Gudovskikh, “Study of the influence of design features of a magnetron sputtering chamber on the electrical and optical properties of indium-tin oxide films”, Fizika i Tekhnika Poluprovodnikov, 55:4 (2021), 360–364 ; Semiconductors, 55:4 (2021), 410–414 |
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| 3. |
D. A. Kudriashov, A. S. Gudovskikh, A. A. Maksimova, A. I. Baranov, A. V. Uvarov, I. A. Morozov, A. O. Monastyrenko, “Influence of the conditions for the formation of In$_{2}$O$_{3}$–SnO$_{2}$ films by magnetron sputtering on the charge carriers lifetime in silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:24 (2021), 31–33 |
| 4. |
A. I. Baranov, D. A. Kudriashov, A. V. Uvarov, I. A. Morozov, K. Yu. Shugurov, A. A. Maksimova, E. A. Vyacheslavova, A. S. Gudovskikh, “Study of Schottky diodes based on an array of silicon wires obtained by cryogenic dry etching”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:18 (2021), 47–50 |
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| 5. |
A. I. Baranov, D. A. Kudriashov, A. V. Uvarov, I. A. Morozov, A. A. Maksimova, E. A. Vyacheslavova, A. S. Gudovskikh, “Admittance spectroscopy of solar cells based on selective contact MoO$_{x}$/Si junction”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:16 (2021), 24–27 ; Tech. Phys. Lett., 47:11 (2021), 785–788 |
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| 6. |
A. V. Uvarov, A. I. Baranov, E. A. Vyacheslavova, N. A. Kalyuzhnyy, D. A. Kudriashov, A. A. Maksimova, I. A. Morozov, S. A. Mintairov, R. A. Salii, A. S. Gudovskikh, “Formation of heterostructures of GaP/Si photoconverters by the combined method of MOVPE and PEALD”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:14 (2021), 51–54 ; Tech. Phys. Lett., 47:10 (2021), 730–733 |
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| 7. |
A. S. Gudovskikh, D. A. Kudriashov, A. I. Baranov, A. V. Uvarov, I. A. Morozov, “A selective BP/Si contact formed by low-temperature plasma-enhanced atomic layer deposition”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:2 (2021), 49–51 ; Tech. Phys. Lett., 47:1 (2021), 96–98 |
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2020 |
| 8. |
D. A. Kudriashov, A. S. Gudovskikh, A. A. Maksimova, A. I. Baranov, A. V. Uvarov, I. A. Morozov, “Using MoO$_{x}$/$p$-Si selective contact for evaluation of the degradation of a near-surface region of silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020), 37–40 ; Tech. Phys. Lett., 46:12 (2020), 1245–1248 |
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2019 |
| 9. |
A. S. Aglikov, D. A. Kudriashov, A. M. Mozharov, S. V. Makarov, A. D. Bolshakov, I. S. Mukhin, “Peculiarities of magnetron sputtering of nickel oxide thin films for use in perovskite solar cells”, Zhurnal Tekhnicheskoi Fiziki, 89:3 (2019), 460–464 ; Tech. Phys., 64:3 (2019), 422–426 |
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2018 |
| 10. |
D. A. Kudriashov, A. S. Gudovskikh, A. I. Baranov, “Precision chemical etching of GaP(NAs) epitaxial layers for the formation of monolithic optoelectronic devices”, Fizika i Tekhnika Poluprovodnikov, 52:13 (2018), 1668–1674 ; Semiconductors, 52:13 (2018), 1775–1781 |
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| 11. |
V. F. Agekyan, E. V. Borisov, A. S. Gudovskikh, D. A. Kudriashov, A. O. Monastyrenko, A. Yu. Serov, N. G. Filosofov, “Formation of Cu$_{2}$O and ZnO crystal layers by magnetron assisted sputtering and their optical characterization”, Fizika i Tekhnika Poluprovodnikov, 52:3 (2018), 402–408 ; Semiconductors, 52:3 (2018), 383–389 |
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2017 |
| 12. |
D. A. Kudriashov, A. S. Gudovskikh, A. V. Babichev, A. V. Filimonov, A. M. Mozharov, V. F. Agekyan, E. V. Borisov, A. Yu. Serov, N. G. Filosofov, “Nanoscale Cu$_2$O films: Radio-frequency magnetron sputtering and structural and optical studies”, Fizika i Tekhnika Poluprovodnikov, 51:1 (2017), 111–115 ; Semiconductors, 51:1 (2017), 110–114 |
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2016 |
| 13. |
I. P. Sotnikov, A. A. Semenov, P. Yu. Belyavskii, I. V. Shtrom, K. P. Kotlyar, V. V. Lisak, D. A. Kudriashov, S. I. Pavlov, A. V. Nashchekin, G. E. Cirlin, “Fabrication of the structures with autocatalytic CdTe nanowires using magnetron sputtering deposition”, Fizika Tverdogo Tela, 58:12 (2016), 2314–2318 ; Phys. Solid State, 58:12 (2016), 2401–2405 |
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| 14. |
A. M. Mozharov, D. A. Kudriashov, A. D. Bolshakov, G. E. Cirlin, A. S. Gudovskikh, I. S. Mukhin, “Numerical simulation of the properties of solar cells based on GaPNAs/Si heterostructures and GaN nanowires”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1543–1547 ; Semiconductors, 50:11 (2016), 1521–1525 |
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2015 |
| 15. |
A. S. Bolshakov, V. V. Chaldyshev, A. V. Babichev, D. A. Kudriashov, A. S. Gudovskikh, I. A. Morozov, M. S. Sobolev, E. V. Nikitina, “Study of multiple InAs/GaAs quantum-well structures by electroreflectance spectroscopy”, Fizika i Tekhnika Poluprovodnikov, 49:11 (2015), 1448–1452 ; Semiconductors, 49:11 (2015), 1400–1404 |
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| 16. |
D. A. Kudriashov, A. S. Gudovskikh, A. M. Mozharov, A. D. Bolshakov, I. S. Mukhin, Zh. I. Alferov, “Simulation of characteristics of double-junction solar cells based on ZnSiP$_2$ heterostructures on silicon substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:23 (2015), 15–23 ; Tech. Phys. Lett., 41:12 (2015), 1120–1123 |
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| 17. |
D. V. Sosnin, D. A. Kudriashov, S. A. Gudovskikh, K. S. Zelentsov, “Electrical and optical properties of nanosized films of doped zinc and indium oxides deposited by RF magnetron sputtering at room temperature”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:16 (2015), 84–90 ; Tech. Phys. Lett., 41:8 (2015), 804–806 |
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2014 |
| 18. |
D. A. Kudriashov, A. S. Gudovskikh, E. V. Nikitina, A. Yu. Egorov, “Design of multijunction GaPNAs/Si heterostructure solar cells by computer simulation”, Fizika i Tekhnika Poluprovodnikov, 48:3 (2014), 396–401 ; Semiconductors, 48:3 (2014), 381–386 |
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2013 |
| 19. |
I. P. Sotnikov, V. A. Petrov, Yu. Yu. Proskuryakov, D. A. Kudriashov, A. V. Nashchekin, G. È. Cirlin, R. Treharne, K. Durose, “Formation of structures with noncatalytic CdTe nanowires”, Fizika i Tekhnika Poluprovodnikov, 47:7 (2013), 865–868 ; Semiconductors, 47:7 (2013), 875–878 |
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