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Publications in Math-Net.Ru |
Citations |
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2025 |
| 1. |
E. N. Kiryanova, V. V. Rumyantsev, A. A. Razova, D. V. Shengurov, N. S. Gusev, E. E. Morozova, V. V. Utochkin, V. R. Baryshev, A. A. Yantser, K. A. Mazhukina, M. A. Fadeev, N. S. Ginzburg, A. M. Malkin, E. D. Egorova, N. N. Mikhailov, S. A. Dvoretskii, V. I. Gavrilenko, S. V. Morozov, “Laser emission in a mesastructure with HgCdTe-based quantum wells with a periodic ridge system”, Fizika i Tekhnika Poluprovodnikov, 59:10 (2025), 608–613  |
| 2. |
A. A. Razova, V. V. Rumyantsev, D. V. Shengurov, N. S. Gusev, E. E. Morozova, V. V. Utochkin, M. A. Fadeev, V. A. Verbus, N. N. Mikhailov, S. A. Dvoretskii, V. I. Gavrilenko, S. V. Morozov, “Optical properties of laser mesastructures with HgCdTe quantum wells formed by ion etching”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:19 (2025), 7–10  |
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2023 |
| 3. |
V. B. Shmagin, A. V. Novikov, A. N. Yablonskii, M. V. Stepikhova, D. V. Yurasov, A. N. Mikhaylov, D. I. Tetelbaum, E. E. Rodyakina, E. E. Morozova, D. V. Shengurov, S. A. Kraev, P. A. Yunin, M. V. Shaleev, A. I. Belov, “Planar (lateral) light-emitting diodes with Ge(Si) nanoislands embedded in a photonic crystal”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:22 (2023), 12–15 |
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2022 |
| 4. |
N. A. Baidakova, A. N. Yablonskii, N. S. Gusev, K. E. Kudryavtsev, E. E. Morozova, D. V. Yurasov, V. Ya. Aleshkin, A. V. Nezhdanov, A. V. Novikov, “Photoluminescence of strained germanium microbridges at various temperatures: experiment and modeling”, Fizika i Tekhnika Poluprovodnikov, 56:10 (2022), 954–960 |
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2021 |
| 5. |
D. V. Yurasov, N. A. Baidakova, V. A. Verbus, N. S. Gusev, E. E. Morozova, D. V. Shengurov, A. N. Yablonskii, A. V. Novikov, “Formation and optical properties of locally strained Ge microstructures embedded into cavities”, Fizika i Tekhnika Poluprovodnikov, 55:5 (2021), 420–426 ; Semiconductors, 55:6 (2021), 531–536 |
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2019 |
| 6. |
D. V. Yurasov, N. A. Baidakova, V. A. Verbus, N. S. Gusev, A. I. Mashin, E. E. Morozova, A. V. Nezhdanov, A. V. Novikov, E. V. Skorokhodov, D. V. Shengurov, A. N. Yablonskii, “Locally strained Ge/SOI structures with improved heat sink as an active media for silicon optoelectronics”, Fizika i Tekhnika Poluprovodnikov, 53:10 (2019), 1360–1365 ; Semiconductors, 53:10 (2019), 1324–1328 |
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| 7. |
D. V. Yurasov, N. A. Baidakova, M. N. Drozdov, E. E. Morozova, M. A. Kalinnikov, A. V. Novikov, “Influence of annealing on the properties of Ge:Sb/Si(001) layers with an antimony concentration above its equilibrium solubility in germanium”, Fizika i Tekhnika Poluprovodnikov, 53:7 (2019), 897–902 ; Semiconductors, 53:7 (2019), 882–886 |
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2018 |
| 8. |
A. V. Novikov, D. V. Yurasov, E. E. Morozova, E. V. Skorokhodov, V. A. Verbus, A. N. Yablonskii, N. A. Baidakova, N. S. Gusev, K. E. Kudryavtsev, A. V. Nezhdanov, A. I. Mashin, “Formation and properties of locally tensile strained Ge microstructures for silicon photonics”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1331–1336 ; Semiconductors, 52:11 (2018), 1442–1447 |
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2017 |
| 9. |
N. A. Baidakova, V. A. Verbus, E. E. Morozova, A. V. Novikov, E. V. Skorokhodov, M. V. Shaleev, D. V. Yurasov, A. Hombe, Y. Kurokawa, N. Usami, “Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells”, Fizika i Tekhnika Poluprovodnikov, 51:12 (2017), 1599–1604 ; Semiconductors, 51:12 (2017), 1542–1546 |
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2016 |
| 10. |
N. A. Baidakova, A. V. Novikov, M. V. Shaleev, D. V. Yurasov, E. E. Morozova, D. V. Shengurov, Z. F. Krasil'nik, “Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1685–1689 ; Semiconductors, 50:12 (2016), 1657–1661 |
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| 11. |
V. B. Shmagin, S. N. Vdovichev, E. E. Morozova, A. V. Novikov, M. V. Shaleev, D. V. Shengurov, Z. F. Krasil'nik, “Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1497–1500 ; Semiconductors, 50:11 (2016), 1475–1478 |
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